STF8209

Gr
Pr
STF8209
S a mHop Microelectronics C orp.
Ver 2.2
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
22.0 @ VGS=4.5V
6.5A
20V
22.5 @ VGS=4.0V
Suface Mount Package.
23.5 @ VGS=3.7V
ESD Protected.
27.5 @ VGS=3.1V
33.5 @ VGS=2.5V
G2
Bottom Drain Contact (D1/D2)
S2
S2
D1/D2
G1
S1
T D F N 2X 3
S1
G1 3
4 G2
S1 2
5
S2
S1
6
S2
1
(Bottom view)
P IN 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
Limit
20
±12
6.5
Units
V
V
A
5.2
A
40
A
TA=25°C
1.56
W
TA=70°C
1.00
W
-55 to 150
°C
80
°C/W
TA=25°C
TA=70°C
a
b
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Apr,10,2012
1
www.samhop.com.tw
STF8209
Ver 2.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
20
Typ
Max
1
±10
VDS=18V , VGS=0V
VGS= ±12V , VDS=0V
0.5
Units
V
uA
uA
0.95
1.5
16.0
19.0
22.0
V
m ohm
VGS=4.0V , ID=3.25A
16.5
19.5
22.5
m ohm
VGS=3.7V , ID=3.25A
17.5
20.5
23.5
m ohm
VGS=3.1V , ID=3.25A
19.0
23.0
27.5
m ohm
28.0
33.5
m ohm
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=3.25A
VGS=2.5V , ID=3.25A
VDS=5V , ID=3.25A
22.0
18
S
320
106
92
pF
pF
pF
13.5
30
ns
ns
19
ns
13.5
ns
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=10V,VGS=0V
f=1.0MHz
c
VDD=16V
ID=3.25A
VGS=4.0V
RGEN= 6 ohm
Total Gate Charge
VDS=16V,ID=6.5A,
VGS=4.0V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=6.5A
7.2
nC
1.4
nC
4
nC
0.89
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
Apr,10,2012
2
www.samhop.com.tw
STF8209
Ver 2.2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
Mounted on FR-4 board of
1 inch2 , 2oz
2
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
R
10
DS
)
(ON
it
Lim
10us
100us
1
1ms
10ms
100ms
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Apr,10,2012
3
www.samhop.com.tw
STF8209
Ver 2.2
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
20
VGS = 4.5 V
4.0 V
ID - Drain Current - A
ID - Drain Current - A
16
3.7 V
12
3.1 V
2.5 V
8
4
10
TA = -25°C
1
125°C
0.1
75°C
0.01
0
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.1
ID = 1.0mA
1.0
0.9
0.8
0.7
0
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
30
3.7 V
20
4.5 V
10
0
0.1
1
10
2.5
3
TA = -25°C
10
25°C
75°C
1
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
4.0 V
2
100
Tch - Channel Temperature - °C
40
1.5
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0.6
-50
1
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
25°C
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 3.25 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
Apr,10,2012
4
www.samhop.com.tw
STF8209
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
ID = 3.25 A
VGS = 2.5 V
40
1000
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.2
3.1 V
3.7 V
4.0 V
4.5 V
30
20
10
0
0
-50
50
100
Ciss
100
Coss
Crss
10
0.1
150
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
4
100
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
tr
td(off)
td(on)
10
tf
VDD = 16 V
VGS = 4.0 V
RG = 6 Ω
3
VDD = 4 V
10 V
16 V
2
1
ID = 6.5 A
1
0
0.1
1
10
0
2
4
6
8
10
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.3
0.6
0.9
1.2
1.5
1.8
VF(S-D) - Source to Drain Voltage - V
Apr,10,2012
5
www.samhop.com.tw
STF8209
Ver 2.2
PACKAGE OUTLINE DIMENSIONS
TDFN
L
E
6
D
TDFN
( 2 x 3 ) - 6L
e
1
H
PIN #1 DOT
BY MARKING
F
C
BOTTOM VIEW
TOP VIEW
PIN #1 ID
CHAMFER 0.300mm
A
B
A1
SYMBOLS
A
A1
D
E
H
L
e
B
C
F
SIDE VIEW
MILLIMETERS
MIN
MAX
0.800
0.700
0.000
0.050
2.950
3.050
1.950
2.050
0.350
0.450
1.550
1.450
1.650
1.750
0.195
0.211
0.200
0.300
0.500 BSC
INCHES
MIN
MAX
0.028
0.031
0.000
0.002
0.120
0.116
0.081
0.077
0.018
0.014
0.061
0.057
0.069
0.065
0.008
0.0076
0.008
0.012
0.020 BSC
Apr,10,2012
6
www.samhop.com.tw