STG8810

STG8810
Gr
Pr
S a mHop Microelectronics C orp.
Ver 2.0
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
18.5 @ VGS=4.5V
Suface Mount Package.
19.5 @ VGS=4.0V
20V
7A
ESD HBM > 2KV.
20.0 @ VGS=3.7V
23.0 @ VGS=3.1V
28.5 @ VGS=2.5V
D 1/D 2
S1
S1
G1
8
7
6
5
1
2
3
4
D2
D1
T S S OP
D 1/D 2
S2
S2
G2
G1
(T OP V IE W)
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
PD
TJ, TSTG
-Pulsed
TA=25°C
TA=70°C
a
b
Maximum Power Dissipation
a
Limit
20
±12
Units
V
V
7.0
A
5.6
A
28
A
TA=25°C
1.5
W
TA=70°C
1
W
-55 to 150
°C
85
°C/W
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
May,20,2011
1
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STG8810
Ver 2.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
VGS=0V , ID=250uA
Forward Transconductance
Typ
1
±10
VGS= ±12V , VDS=0V
VDS=VGS , ID=1mA
VGS=4.5V , ID=3.5A
VGS=4.0V , ID=3.5A
VGS=3.7V , ID=3.5A
VDS=5V , ID=3.5A
Max
20
VDS=16V , VGS=0V
VGS=3.1V , ID=3.5A
VGS=2.5V , ID=3.5A
gFS
Min
0.5
0.9
14.0
14.5
15.0
16.0
16.5
17.0
18.0
17.5
19.5
23.5
19
Units
V
uA
uA
1.5
V
18.5 m ohm
19.5 m ohm
20.0 m ohm
23.0 m ohm
28.5
m ohm
S
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
VDS=10V,VGS=0V
f=1.0MHz
Gate-Source Charge
Qgd
Gate-Drain Charge
pF
pF
pF
61
ns
295
ns
821
ns
c
VDD=16V
ID=3.5A
VGS=4.5V
RGEN= 6 ohm
Total Gate Charge
Qgs
300
151
71
VDS=16V,ID=7A,
VGS=4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS=0V,IS=1.0A
580
ns
9
nC
1.5
nC
5
nC
0.78
1.2
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 1%.
_ 10us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
May,20,2011
2
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STG8810
Ver 2.0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
3
PT - Total Power Dissipation - W
dT - Percentage of rated Power - %
120
100
80
60
40
20
2.5
2
Mounted on FR-4 board of
1 inch2 , 2oz
1.5
1
0.5
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
R
(O
N)
it
Lim
DS
10us
100us
1ms
1
10ms
100ms
1s
0.1
VGS=4.5V
Single Pulse
TA=25 C
0.01
0.1
DC
1
10
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(ch-A) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
100
Mounted on FR-4 board of
1 inch2 , 2oz
100
10
1
Single Pulse
0.1
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
May,20,2011
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STG8810
Ver 2.0
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
30
4.0 V
ID - Drain Current - A
ID - Drain Current - A
3.7 V
VGS = 4.5 V
3.1 V
20
2.5 V
10
10
125°C
1
TA = -25°C
25°C
0.1
75°C
0.01
0
0
0.2
0.4
0.6
0.8
0.5
0
1
ЮyfsЮ- Forward Transfer Admittance - S
VGS(off) - Gate to Source Cut-off Voltage - V
1.1
ID = 1.0mA
1.0
0.9
0.8
0.7
0.6
50
100
150
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
20
10
0
0.1
1
10
3
TA = -25°C
10
25°C
1
75°C
125°C
0.1
0.01
0.01
0.1
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
30
2.5
100
Tch - Channel Temperature - °C
40
2
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
GATEBTO SOURE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
0
1.5
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
0.5
-50
1
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
ID = 3.5 A
30
20
10
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
May,20,2011
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STG8810
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
30
Ciss, Coss, Crss - Capacitance - pF
VGS = 2.5 V
3.1 V
3.7 V
4.0 V
4.5 V
1000
ID = 3.5 A
20
10
0
-50
0
50
100
Coss
Ciss
100
Crss
10
0.1
150
1
10
100
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
VDD = 16.0 V
VGS = 4.5 V
RG = 6 Ω
1000
VGS - Gate to Drain Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
RDS(on) - Drain to Source On-state Resistance - mΩ
Ver 2.0
td(off)
tf
tr
100
td(on)
4
VDD = 4.0 V
10 V
16 V
3
2
1
ID = 7 A
10
0
0.1
1
10
0
2
4
6
8
10
QG - Gate Charge -nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
IF - Diode Forward Current - A
100
10
1
0.1
VGS = 0 V
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
VF(S-D) - Source to Drain Voltage - V
May,20,2011
5
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STG8810
Ver 2.0
PACKAGE OUTLINE DIMENSIONS
DETAIL A
T S S OP -8
DETAIL A
MIN
0.85
0.80
0.19
MAX
MIN
0.033
0.031
0.007
0.30
MAX
0.012
2
2
3
3
Notes: 1. This drawing is for general information only.Refer to JEDEC Drawing MO-153,Variation AA,for
proper dimensions,tolerances,datums,etc.
2. Dimension D does not include mold Flash,protrusions or gate burrs.Mold Flash,protrusions and
gate burrs shall not exceed 0.15 mm (0.006 in) per side.
3. Dimension E does not include inter-lead Flash or protrusions.Inter-lead Flash and protrusions
shall not exceed 0.25mm (0.010 in) per side.
4. Dimension b does not include Dambar protrusion.Allowable Dambar protrusion shall be 0.08 mm
total in excess of the b dimension at maximum material condition.Dambar cannot be located on
the lower radius of the foot. Minimum space between protrusion and adjacent lead is 0.07 mm.
5. Dimension D and E to be determined at Datum Plane H.
May,20,2011
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STG8810
Ver 2.0
TSSOP-8 Tape and Reel Data
TSSOP-8 Carrier Tape
UNIT : р
PACKAGE
TSSOP
8
A0
6.08
B0
4.40
K0
D0
D1
E
E1
E2
P0
P1
P2
T
1.60
ӿ1.50
+ 0.1
- 0.0
ӿ1.50
+ 0.1
- 0.0
12.00
² 0.3
1.75
5.50
² 0.05
8.00
4.00
2.00
²0.05
0.30
²0.05
W
W1
H
K
S
G
R
16.0
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
TSSOP-8 Reel
UNIT : р
TAPE SIZE
12 р
REEL SIZE
ӿ330
M
330
N
100
12.5
V
May,20,2011
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