SDP10N60 SDF10N60

SDP10N60
SDF10N60
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
600V
10A
0.62 @ VGS=10V
Rugged and reliable.
TO-220 and TO-220F Package.
D
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
SDP10N60HZ
G
G D S
G D S
Marking Code
SDP10N60
TO-220
SDP10N60PZ
TO-220
SDF10N60HZ
TO-220F
SDF10N60PZ
TO-220F
S
RoHS Status
Halogen Free
Delivery Mode
Tube
10N60
Tube
Pb Free
SDF10N60
Tube
Halogen Free
10N60
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
SDP10N60 SDF10N60
600
±30
±30
TC=25°C
TC=100°C
a
a
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
Units
V
V
10
10
A
6
6
A
40
c
40
A
mJ
709
TC=25°C
162
52
W
TC=100°C
65
21
W
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
0.77
62.5
Details are subject to change without notice.
2.4
62.5
°C
°C/W
°C/W
Dec,24,2013
1
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SDP10N60
SDF10N60
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
Conditions
Min
VGS=0V , ID=250uA
600
Typ
Units
1
±100
uA
V
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=5.0A
Max
2
0.62
4
0.75
nA
V
ohm
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
VDS=25V,VGS=0V
f=1.0MHz
1650
165
18
pF
pF
pF
25
ns
70
ns
140
ns
80
ns
b
Turn-On Delay Time
VDD=300V
ID=1A
RGEN= 25 ohm
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=480V,ID=1A,VGS=10V
48
nC
Qgs
Gate-Source Charge
nC
Gate-Drain Charge
VDS=480V,ID=1A,
VGS=10V
7.0
Qgd
18
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=10A
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=13mH,VDD = 50V.
Dec,24,2013
2
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SDP10N60
SDF10N60
Ver 1.1
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Dec,24,2013
3
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SDP10N60
SDF10N60
Ver 1.1
Tj, Junction Temperature( ° C )
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
Figure 10. Maximum Drain Current
vs Case Temperature
Dec,24,2013
4
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SDP10N60
SDF10N60
Ver 1.1
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Dec,24,2013
5
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SDP10N60
SDF10N60
Ver 1.1
Dec,24,2013
6
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SDP10N60
SDF10N60
Ver 1.1
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
7
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SDP10N60
SDF10N60
Ver 1.1
TO-220 Tube
Dec,24,2013
8
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SDP10N60
SDF10N60
Ver 1.1
F Tube
Dec,24,2013
9
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SDP10N60
SDF10N60
Ver 1.1
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP10N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
10N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP10N60
SDF10N60
Ver 1.1
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF10N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
10N60
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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