Green Product STU/D419S S a mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. 11.5 @ VGS=10V -40V Suface Mount Package. -58A 16 @ VGS=4.5V G ESD Protected. G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Drain Current-Continuous(Package limited) TC=25°C ID -Continuous(Silicon limited) TC=25°C a -Continuous TA=25°C b IDM -Pulsed EAS PD TJ, TSTG Sigle Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Units V V A -58 A A -11 -175 A 224 mJ TC=25°C 70 W TA=25°C 2.5 W -55 to 150 °C 1.8 50 °C/W °C/W d Maximum Power Dissipation Limit -40 ±20 -50 Sep,15,2008 1 www.samhop.com.tw STU/D419S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Conditions Min VGS=0V , ID=-250uA -40 Typ VGS= ±20V , VDS=0V -1 Units 1 ±10 uA V VDS=-32V , VGS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-20A Max -3 uA -1.5 9.6 11.5 V m ohm VGS=-4.5V , ID=-17A 12.5 16 m ohm VDS=-10V , ID=-20A 9 S VDS=-20V,VGS=0V f=1.0MHz 3550 710 420 pF pF pF 40 70 345 125 ns ns ns ns VDS=-20V,ID=-20A,VGS=-10V 87 nC VDS=-20V,ID=-20A,VGS=-4.5V 42 9 20 nC c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge c VDD=-20V ID=-1.0A VGS=-10V RGEN=3.3 ohm VDS=-20V,ID=-20A, VGS=-10V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Is Maximum Continuous Drain-Source Forward Current VSD Diode Forward Voltage b VGS=0V,IS= -2.0A -0.77 nC nC -2.0 A -1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,VDD = 30V .(See Figure13) Sep,15,2008 2 www.samhop.com.tw STU/D419S Ver 1.0 20 25 V G S =-10V -I D, Drain Current(A) -ID, Drain Current(A) 20 V G S =-4.5V 15 V G S =-2.5V 10 V G S =-2V 5 15 10 5 -55 C 1 T j=125 C 0 0.5 1 2 1.5 2.5 3 0 -V DS, Drain-to-Source Voltage(V) 1.0 1.5 2.0 2.5 3.0 Figure 2. Transfer Characteristics 24 1.8 R DS(on), On-Resistance Normalized 20 RDS(on)(m Ω) 0.5 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 16 V G S =4.5V 12 V G S =10V 8 4 0 1.6 V G S =-10V I D =-20A 1.4 V G S =-4V I D =-17A 1.2 1.0 0.8 1 5 10 15 20 0 25 50 25 75 100 150 125 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 25 C 0 0 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Sep,15,2008 3 www.samhop.com.tw STU/D419S Ver 1.0 30 20.0 125 C Is, Source-drain current(A) I D =-20A 125 C 25 RDS(on)(m Ω) 75 C 20 25 C 15 10 5 0 0 2 4 6 8 5.0 75 C 0.4 0.8 1.2 1.6 2.0 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 4000 C, Capacitance(pF) 25 C 10.0 1.0 0 10 4800 C is s 3200 2400 1600 C os s 800 C rs s 0 5 10 15 20 25 30 6 4 2 0 12.5 25 37.5 50 62.5 75 87.5 100 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 500 6000 I D, Drain Current(A) 100 1000 600 T D(off) Tf 100 Tr T D(on) VDS=-20V,ID=-1A VGS=-10V 10 1 V DS =-20V I D =-20A 8 0 0 Switching Time(ns) 15.0 3 6 10 R Rg, Gate Resistance(Ω) )L im 1 it 10 1m 0u s s 10 m DC s 10 0.1 60 100 300 600 D ON S( V G S =-10V S ingle P ulse T A =25 C 1 10 40 100 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Sep,15,2008 4 www.samhop.com.tw STU/D419S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,15,2008 5 www.samhop.com.tw STU/D419S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L1 L2 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Sep,15,2008 6 www.samhop.com.tw STU/D419S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Sep,15,2008 7 www.samhop.com.tw STU/D419S Ver 1.0 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M N W T H K S ӿ 330 ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 - 0 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Sep,15,2008 8 www.samhop.com.tw