SDU/D04N60

Green
Product
SDU/D04N60
S a mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
600V
4A
2.1 @ VGS=10V
Rugged and reliable.
Suface Mount Package.
D
G
D
G
S
SDU SERIES
TO-252(D-PAK)
G
D
S
SDD SERIES
TO-251S(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
S
SDD SERIES
TO-251L(I-PAK)
RoHS Status
Halogen Free
SDU04N60HZ
TO-252
Marking Code
SDU04N60
SDD04N60HS
TO-251S
SDD04N60
Tube
Halogen Free
SDD04N60HL
TO-251L
SDD04N60
Tube
Halogen Free
Delivery Mode
Reel
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
Limit
600
±30
Units
V
V
4
A
2.8
A
11.8
A
51
mJ
TC=25°C
83
W
TC=100°C
42
W
-55 to 175
°C
Thermal Resistance, Junction-to-Case
1.8
°C/W
Thermal Resistance, Junction-to-Ambient
50
°C/W
-Pulsed
TC=25°C
a e
TC=100°C
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
THERMAL CHARACTERISTICS
R JC
R JA
Details are subject to change without notice.
May,20,2014
1
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SDU/D04N60
Ver 2.2
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS(th)
RDS(ON)
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
Min
VGS=0V , ID=250uA
600
Typ
VGS= ±30V , VDS=0V
2
Units
1
±100
uA
V
VDS=480V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
Max
3
2.1
3.5
4
2.6
nA
V
ohm
S
c
Input Capacitance
Output Capacitance
tD(ON)
Conditions
VDS=25V,VGS=0V
f=1.0MHz
500
60
pF
pF
12
pF
20
ns
17
ns
c
VDD=300V
ID=1A
VGS=10V
RGEN=6 ohm
24
ns
tf
Qg
12
ns
Total Gate Charge
VDS=300V,ID=1A,VGS=10V
11.2
nC
Qgs
Gate-Source Charge
2.2
nC
Qgd
Gate-Drain Charge
VDS=300V,ID=1A,
VGS=10V
4.9
nC
Fall Time
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.78
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
May,20,2014
2
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SDU/D04N60
Ver 2.2
3.0
7
VGS = 10V
VGS = 6V
ID, Drain Current(A)
ID, Drain Current(A)
6
5
4
3
VGS = 5V
2
2.4
Tj=125 C
1.8
1.2
25 C
-55 C
0.6
1
0
0
0
15
10
5
25
20
Figure 1. Output Characteristics
5
2.6
RDS(ON), On-Resistance
Normalized
3.0
R DS(on)( Ω)
4
V G S =10V
2
1
5
6
V G S =10V
I D = 2A
2.2
1.8
1.4
1.0
0
0
0.1
1
2
3
4
0
5
1.4
1.2
1.0
0.8
0.6
0.4
-25
0
25
50
75
100
125
150
Tj, Junction Temperature ( C)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
50
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
4
Figure 2. Transfer Characteristics
6
0.2
-50
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
3
2
1
0
30
75 100 125 150
Tj, Junction Temperature ( C)
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
May,20,2014
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SDU/D04N60
Ver 2.2
20.0
6
I D =2A
125 C
4
RDS(on)( Ω)
Is, Source-drain current (A)
5
3
75 C
2
25 C
1
0
0
2
4
6
8
25 C
125 C
5.0
75 C
1.0
10
0
0.3
0.6
0.9
1.2
1.5
V GS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
900
750
C, Capacitance (pF)
10.0
600
Ciss
450
300
Coss
150
V DS = 300V
I D =1A
8
6
4
2
Crss
0
10
20
40
30
0
50
0
2
4
8
6
10
14 16
12
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
TD(on)
Tr
Tf
10
VDS=300V,ID=1A
VGS=10V
(O
S
RD
1
0u
s
s
ms
10 C
D
TD(off )
10
it
10
L im
100
N)
50
ID, Drain Current (A)
300
1m
Switching Time(ns)
0
0.1
VGS=10V
Single Pulse
TC=25 C
0.01
1
1
10
100
0.1
Rg, Gate Resistance(Ω)
1
10
100
1000
V DS, Drain-Source Voltage (V)
Figure 12. Maximum Safe
Operating Area
Figure 11. switching characteristics
May,20,2014
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SDU/D04N60
Ver 2.2
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
May,20,2014
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SDU/D04N60
Ver 2.2
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
May,20,2014
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SDU/D04N60
Ver 2.2
PACKAGE OUTLINE DIMENSIONS
TO-251S
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
May,20,2014
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SDU/D04N60
Ver 2.2
PACKAGE OUTLINE DIMENSIONS
TO-251L
A
E
A1
A2
C
B
D
b3
L1
b2
b4
L
e
SYMBOL
A
A1
A2
B
L1
L
D
C
C1
E1
E
b1
b2
b3
b4
e
C1
b1
MIN
6.40
5.30
4.30
1.35
6.50
5.40
0.55
0.49
1.72
2.20
0.60
0.70
E1
MILLIMETERS
NOM
6.50
5.40
4.40
1.50
1.55 REF
7.20
5.55
0.60
0.54
1.77
2.30
MAX
6.60
5.50
4.50
1.65
7.90
5.70
0.65
0.59
1.82
2.40
0.75
0.85
0.80
0.90
2.30
May,20,2014
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SDU/D04N60
Ver 2.2
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
May,20,2014
9
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SDU/D04N60
Ver 2.2
TOP MARKING DEFINITION
TO-252
SamHop Logo
SDU04N60
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
May,20,2014
10
www.samhop.com.tw
SDU/D04N60
Ver 2.2
TOP MARKING DEFINITION
TO-251S
SDD04N60
XXXXXX
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
TO-251L
SamHop Logo
SDD04N60
XXXXXX
Product No.
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
May,20,2014
11
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