SDP02N65 SDF02N65 S a mHop Microelectronics C orp. Ver 2.1 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) ( Ω) Max 650V 2A 5.6 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-220F Package. D SDF SERIES TO-220F SDP SERIES TO-220 ORDERING INFORMATION Ordering Code Package SDP02N65HZ G G D S G D S Marking Code SDP02N65 TO-220 S RoHS Status Halogen Free Delivery Mode Tube SDP02N65PZ TO-220 02N65 Tube Pb Free SDF02N65HZ TO-220F SDF02N65 Tube Halogen Free SDF02N65PZ TO-220F 02N65 Tube Pb Free ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM E AS -Pulsed SDP02N65 SDF02N65 650 ±30 ±30 TC=25°C TC=100°C a a Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range 2 2 1.4 1.4 A 5.9 5.9 A c mJ 56 TC=25°C TC=100°C 75 25 W 37.5 12.5 W -55 to 175 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2 62.5 Details are subject to change without notice. Units V V A 6 62.5 °C °C/W °C/W Dec,24,2013 1 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance Conditions Min VGS=0V , ID=250uA 650 Typ VGS= ±30V , VDS=0V VDS=20V , ID=1A 2 Units 1 ±100 uA V VDS=520V , VGS=0V VDS=VGS , ID=250uA VGS=10V , ID=1A Max 3 4.4 1.7 4 5.6 nA V ohm S b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=25V,VGS=0V f=1.0MHz 302 37 10 pF pF pF 15.2 ns 16.4 ns 17 ns 9.6 ns 5 nC 1.4 nC 2.2 nC b VDD=325V ID=1A VGS=10V RGEN= 6 ohm VDS=325V,ID=1A,VGS=10V VDS=325V,ID=1A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VSD Diode Forward Voltage VGS=0V,IS=1A 0.8 1.4 V Notes a.Drain current limited by maximum junction temperatrue. b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12) Dec,24,2013 2 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 3.0 1.5 I D, Drain Current(A) VG S = 10V 2.4 ID, Drain Current(A) VG S = 7V VG S = 6V 1.8 1.2 VG S = 5V 0.6 1.2 0.9 0.6 T j=125 C 0.3 25 C -55 C 0 0 5 10 15 20 25 0 30 0 VDS, Drain-to-Source Voltage(V) 3.0 10 2.6 R DS(on), On-Resistance Normalized R DS(on)( Ω) 12 8 V G S =10V 4 2 0.6 1.2 1.8 2.4 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.2 1.0 0.8 0.6 0.4 50 0 25 50 75 100 125 150 T j( C ) Figure 4. On-Resistance Variation with Drain Current and Temperature V DS =V G S I D =250uA 25 7.2 1.0 Tj, Junction Temperature(° C ) 1.6 0 6.0 1.4 3.0 Figure 3. On-Resistance vs. Drain Current and Gate Voltage 0.2 -50 -25 4.8 1.8 I D, Drain Current(A) 1.4 3.6 V G S =10V I D =1A 2.2 0 0 0.01 2.4 Figure 2. Transfer Characteristics Figure 1. Output Characteristics 6 1.2 V GS, Gate-to-Source Voltage(V) 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,24,2013 3 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 20.0 18 Is, Source-drain current(A) I D = 1A R DS(on)(Ω) 15 12 125 C 9 75 C 6 25 C 3 0 2 0 4 6 5.0 125 C 75 C 25 C 1.0 10 8 10.0 0 V GS, Gate-to-Source Voltage(V) 0.9 1.2 1.5 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 600 500 C, Capacitance(pF) 0.6 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 400 C is s 300 C os s 200 100 C rs s 0 V DS =325V I D = 1A 8 6 4 2 0 0 10 20 30 40 50 0 VDS, Drain-to-Source Voltage(V) 1 2 3 5 4 6 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 10 10 1 R ( DS ) ON L im it 10 10 1m s 0u I D , Drain C urrent (A) I D , Drain C urrent (A) 0.3 s m DC s 0.1 0.01 VGS=10V Single Pulse TC=25 C 1 R ( DS ) ON L im it 1 1 0 0 us 0 1 m us 10 s m DC s 0.1 0.01 VGS=10V Single Pulse TC=25 C 0.003 0.003 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-S ource V oltage (V ) V DS , Drain-S ource V oltage (V ) Figure 11b. Maximum Safe Operating Area for SDF02N65 Figure 11a. Maximum Safe Operating Area for SDP02N65 Dec,24,2013 4 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 12a. F igure 12b. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration (msec) Figure 13a. Normalized Thermal Transient Impedance Curve for SDP02N65 r(t),Normalized E ffective T ransient T hermal Impedance 2 1 D=0.5 0.2 0.1 0.05 P DM 0.1 0.02 t1 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 S quare Wave P uls e Duration (ms ec) Figure 13b. Normalized Thermal Transient Impedance Curve for SDF02N65 Dec,24,2013 5 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 Dec,24,2013 6 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 TO-220F A1 E Q1 P A3 Q D1 D L2 L1 b1x3 L bx3 c e SYMBOL A A1 A2 A3 b b1 c D D1 E E1 e L L1 L2 Q Q1 P E1 A A2 MILLIMETERS MAX MIN 4.90 4.50 2.35 2.75 2.15 2.92 0.50 0.65 0.90 0.70 1.55 1.15 0.70 0.45 16.30 15.30 6.67 6.77 9.90 10.32 9.20 9.40 2.54 REF. 9.45 10.05 2.79 3.60 15.60 16.00 3.40 3.20 7.10 6.90 3.55 2.90 Dec,24,2013 7 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 TO-220 Tube Dec,24,2013 8 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 F Tube Dec,24,2013 9 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 TOP MARKING DEFINITION TO-220 (Halogen Free) SamHop Logo SDP02N65 XXXXXX Product No. SMC internal code No. (A,B,C...Z) Wafer Lot Number TO-220 (Pb Free) Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 02N65 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 10 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 TOP MARKING DEFINITION TO-220F (Halogen Free) SamHop Logo SDF02N65 XXXXXX Product No. SMC internal code No. (A,B,C...Z) TO-220F (Pb Free) Wafer Lot Number Production Date (1,2 ~ 9, A,B...) Production Month (1,2 ~ 9, A,B,C) Production Year (2009 = 9, 2010 = A...) SamHop Logo PB Free Product No. 02N65 XXXXX Production Year (2009 = 9, 2010 = A...) Production Month (1,2 ~ 9, A,B,C) Production Date (1,2 ~ 9, A,B...) Wafer Lot Number Dec,24,2013 11 www.samhop.com.tw