SDP02N65 SDF02N65

SDP02N65
SDF02N65
S a mHop Microelectronics C orp.
Ver 2.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Max
650V
2A
5.6 @ VGS=10V
FEATURES
Super high dense cell design for low R DS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
SDP02N65HZ
G
G D S
G D S
Marking Code
SDP02N65
TO-220
S
RoHS Status
Halogen Free
Delivery Mode
Tube
SDP02N65PZ
TO-220
02N65
Tube
Pb Free
SDF02N65HZ
TO-220F
SDF02N65
Tube
Halogen Free
SDF02N65PZ
TO-220F
02N65
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
E AS
-Pulsed
SDP02N65 SDF02N65
650
±30
±30
TC=25°C
TC=100°C
a
a
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
2
2
1.4
1.4
A
5.9
5.9
A
c
mJ
56
TC=25°C
TC=100°C
75
25
W
37.5
12.5
W
-55 to 175
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2
62.5
Details are subject to change without notice.
Units
V
V
A
6
62.5
°C
°C/W
°C/W
Dec,24,2013
1
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SDP02N65
SDF02N65
Ver 2.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
Conditions
Min
VGS=0V , ID=250uA
650
Typ
VGS= ±30V , VDS=0V
VDS=20V , ID=1A
2
Units
1
±100
uA
V
VDS=520V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
Max
3
4.4
1.7
4
5.6
nA
V
ohm
S
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=25V,VGS=0V
f=1.0MHz
302
37
10
pF
pF
pF
15.2
ns
16.4
ns
17
ns
9.6
ns
5
nC
1.4
nC
2.2
nC
b
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.8
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Dec,24,2013
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SDP02N65
SDF02N65
Ver 2.1
3.0
1.5
I D, Drain Current(A)
VG S = 10V
2.4
ID, Drain Current(A)
VG S = 7V
VG S = 6V
1.8
1.2
VG S = 5V
0.6
1.2
0.9
0.6
T j=125 C
0.3
25 C
-55 C
0
0
5
10
15
20
25
0
30
0
VDS, Drain-to-Source Voltage(V)
3.0
10
2.6
R DS(on), On-Resistance
Normalized
R DS(on)( Ω)
12
8
V G S =10V
4
2
0.6
1.2
1.8
2.4
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.0
0.8
0.6
0.4
50
0
25
50
75
100
125
150
T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
V DS =V G S
I D =250uA
25
7.2
1.0
Tj, Junction Temperature(° C )
1.6
0
6.0
1.4
3.0
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
0.2
-50 -25
4.8
1.8
I D, Drain Current(A)
1.4
3.6
V G S =10V
I D =1A
2.2
0
0
0.01
2.4
Figure 2. Transfer Characteristics
Figure 1. Output Characteristics
6
1.2
V GS, Gate-to-Source Voltage(V)
75 100 125 150
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
3
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SDP02N65
SDF02N65
Ver 2.1
20.0
18
Is, Source-drain current(A)
I D = 1A
R DS(on)(Ω)
15
12
125 C
9
75 C
6
25 C
3
0
2
0
4
6
5.0
125 C
75 C
25 C
1.0
10
8
10.0
0
V GS, Gate-to-Source Voltage(V)
0.9
1.2
1.5
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V GS, Gate to Source Voltage(V)
600
500
C, Capacitance(pF)
0.6
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
400
C is s
300
C os s
200
100
C rs s
0
V DS =325V
I D = 1A
8
6
4
2
0
0
10
20
30
40
50
0
VDS, Drain-to-Source Voltage(V)
1
2
3
5
4
6
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
10
10
1
R
(
DS
)
ON
L im
it
10
10
1m
s
0u
I D , Drain C urrent (A)
I D , Drain C urrent (A)
0.3
s
m
DC s
0.1
0.01
VGS=10V
Single Pulse
TC=25 C
1
R
(
DS
)
ON
L im
it
1
1 0 0 us
0
1 m us
10 s
m
DC s
0.1
0.01
VGS=10V
Single Pulse
TC=25 C
0.003
0.003
0.1
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-S ource V oltage (V )
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF02N65
Figure 11a. Maximum Safe Operating
Area for SDP02N65
Dec,24,2013
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SDP02N65
SDF02N65
Ver 2.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
0.0 1
tp
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 12a.
F igure 12b.
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.2
0.1
0.1
P DM
0.05
t1
t2
0.02
1.
2.
3.
4.
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
0.1
1
10
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP02N65
r(t),Normalized E ffective
T ransient T hermal Impedance
2
1
D=0.5
0.2
0.1
0.05
P DM
0.1
0.02
t1
t2
0.01
1.
2.
3.
4.
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
0.1
R J C (t)=r (t) * R J C
R J C =S ee Datas heet
T J M-T C = P * R J C (t )
Duty C ycle, D=t1/t2
1
10
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF02N65
Dec,24,2013
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SDP02N65
SDF02N65
Ver 2.1
Dec,24,2013
6
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SDP02N65
SDF02N65
Ver 2.1
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
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SDP02N65
SDF02N65
Ver 2.1
TO-220 Tube
Dec,24,2013
8
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SDP02N65
SDF02N65
Ver 2.1
F Tube
Dec,24,2013
9
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SDP02N65
SDF02N65
Ver 2.1
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP02N65
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
02N65
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP02N65
SDF02N65
Ver 2.1
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF02N65
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
02N65
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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