SDU/D03N04

Green
Product
SDU/D03N04
S a mHop Microelectronics C orp.
Ver 1.3
N-Channel Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
400V
2A
3.2 @ VGS=10V
Rugged and reliable.
Suface Mount Package.
D
G
D
G
S
SDU SERIES
TO-252(D-PAK)
G
D
S
SDD SERIES
TO-251S(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
S
SDD SERIES
TO-251L(I-PAK)
RoHS Status
Halogen Free
SDU03N04HZ
TO-252
Marking Code
SDU03N04
SDD03N04HS
TO-251S
SDD03N04
Tube
Halogen Free
SDD03N04HL
TO-251L
SDD03N04
Tube
Halogen Free
Delivery Mode
Reel
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
EAS
PD
TJ, TSTG
-Pulsed
a
Limit
400
±30
Units
V
V
TA=25°C
2
A
TA=70°C
1.5
A
6
A
10.4
mJ
42
W
27
W
-55 to 150
°C
3
°C/W
50
°C/W
b
Single Pulse Avalanche Energy
d
Maximum Power Dissipation
TA=25°C
TA=70°C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Dec,24,2013
1
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SDU/D03N04
Ver 1.3
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Min
VGS=0V , ID=250uA
400
Typ
VGS= ±30V , VDS=0V
Drain-Source On-State Resistance
Forward Transconductance
VDS=10V , ID=1A
2
Max
Units
1
±100
uA
V
VDS=320V , VGS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=1A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
Conditions
3
3.2
0.9
4
3.8
nA
V
ohm
S
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
185
31
6.1
pF
pF
pF
13.4
ns
12.2
ns
21.5
ns
5.6
ns
c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=200V,ID=1A,VGS=10V
4.36
nC
Qgs
Qgd
Gate-Source Charge
VDS=200V,ID=1A,
VGS=10V
1.28
nC
Gate-Drain Charge
1.48
nC
VDD=200V
ID=1A
VGS=10V
RGEN=25 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.81
1
A
1.4
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 300us, Duty Cycle <
_ 2%.
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1mH,RG=25Ω,VDD = 50V.(See Figure12)
Dec,24,2013
2
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SDU/D03N04
Ver 1.3
1.0
4.0
VGS = 10V
3.5
ID, Drain Current(A)
ID, Drain Current(A)
0.8
3.0
VGS = 6V
2.5
2.0
1.5
VGS = 5V
1.0
Tj=125 C
0.6
0.4
-55 C
25 C
0.2
0.5
0
0
15
10
5
0
20
25
30
0
Figure 1. Output Characteristics
6
2.2
RDS(ON), On-Resistance
Normalized
2.5
R DS(on)( Ω)
5
VGS = 10V
4
3
6
V G S =10V
I D = 1A
1.9
1.6
1.3
1.0
2
0
0.7
1.4
2.1
2.8
0.7
3.5
0
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25
50
100
125
150
Tj, Junction Temperature ( C)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
75
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.2
50
25
Tj( C)
ID, Drain Current (A)
Vth, Normalized
Gate-Source Threshold Voltage
5
Figure 2. Transfer Characteristics
7
0.5
4
3
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
2
1
75 100 125 150
Tj, Junction Temperature ( C)
1.3
I D =250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
Dec,24,2013
3
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SDU/D03N04
Ver 1.3
9.0
20.0
I D =1A
Is, Source-drain current (A)
7.5
RDS(on)( Ω)
6.0
4.5
125 C
3.0
75 C
25 C
1.5
0
2
4
6
8
125 C
1.0
10
25 C
0
0.4
0.8
1.2
1.6
2.0
V GS, Gate-Sorce Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
VGS, Gate to Source Voltage (V)
240
200
C, Capacitance (pF)
5.0
75 C
0
Ciss
160
120
80
Coss
40
Crss
0
20
10
4
2
50
0
2
4
6
8
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
RD
S
(
)
ON
L im
1m
it
10
DC
0.1
0.001
0.1
6
VDS, Drain-to Source Voltage(V)
1
0.01
40
30
V DS = 200V
I D =1A
8
0
0
ID, Drain Current (A)
10.0
1
10 s
s
10
0m
10
s
ms
s
VGS=10V
Single Pulse
TA=25 C
1
10
100
1000
VDS, Drain-Source Voltage (V)
Figure 11. Maximum Safe
Operating Area
Dec,24,2013
4
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SDU/D03N04
Ver 1.3
V ( BR )D S S
15V
tp
D R IVE R
L
VDS
D .U .T
RG
+
- VD D
IA S
A
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
F igure 13a.
F igure 13b.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Dec,24,2013
5
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SDU/D03N04
Ver 1.3
TO-252
E
E1
b3
L3
D1
D
H
3
2
1
L4
b
b2
e
A
SYMBOLS
c2
A
A1
b
b2
b3
c
c2
D
D1
e
E
E1
H
L
L1
L2
L3
L4
DETAIL "A"
c
L2
L
L1
A1
MILLIMETERS
MIN
MAX
2.380
2.200
0.000
0.127
0.635
0.889
0.762
1.143
5.200
5.460
0.450
0.600
0.450
0.580
6.000
6.223
5.380
5.210
2.286 BSC
6.400
6.731
4.318
4.900
9.400
10.400
1.400
1.770
2.743 REF
0.508 BSC
1.270
0.890
0.640
1.010
10 °
0°
DETAIL "A"
Dec,24,2013
6
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SDU/D03N04
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
TO-251S
A
E
b3
c2
D1
E1
D
H
1
2
3
b2
L4
L5
L
b
e
b4
SYMBOL
c
MILLIMETERS
MIN
MAX
E
6.350
6.731
L
3.700
4.400
L4
0.698 REF
L5
0.972
1.226
D
5.970
9.670
6.223
11.450
0.630
0.850
0.760
4.950
1.140
0.450
0.550
H
b
b2
b3
b4
e
A
c
c2
D1
E1
5.460
2.286 BSC
2.390
2.180
0.400
0.610
0.400
0.610
5.100
4.318
Dec,24,2013
7
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SDU/D03N04
Ver 1.3
PACKAGE OUTLINE DIMENSIONS
TO-251L
A
E
A1
A2
C
B
D
b3
L1
b2
b4
L
e
SYMBOL
A
A1
A2
B
L1
L
D
C
C1
E1
E
b1
b2
b3
b4
e
C1
b1
MIN
6.40
5.30
4.30
1.35
7.40
5.40
0.55
0.49
1.72
2.20
0.60
0.70
E1
MILLIMETERS
NOM
6.50
5.40
4.40
1.50
1.55 REF
7.70
5.55
0.60
0.54
1.77
2.30
MAX
6.60
5.50
4.50
1.65
8.00
5.70
0.65
0.59
1.82
2.40
0.75
0.85
0.80
0.90
2.30
Dec,24,2013
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SDU/D03N04
Ver 1.3
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
2.2
ӿ13.0
+ 0.5
- 0.2
K
S
10.6
2.0
²0.5
G
R
V
Dec,24,2013
9
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SDU/D03N04
Ver 1.3
TOP MARKING DEFINITION
TO-252
SamHop Logo
SDU03N04
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
Dec,24,2013
10
www.samhop.com.tw
SDU/D03N04
Ver 1.3
TOP MARKING DEFINITION
TO-251S
SDD03N04
XXXXXX
SMC internal code No. (A,B,C...Z)
Wafer Lot No.
Production Date (1,2 ~ 9, A,B.....)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A.....)
TO-251L
SamHop Logo
SDD03N04
XXXXXX
Product No.
Production Year (2009 = 9, 2010 = A.....)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B.....)
Wafer Lot No.
SMC internal code No. (A,B,C...Z)
Dec,24,2013
11
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