SEME-LAB BFY81

SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
•
Dual Silicon Matched Planar Transistors
•
Hermetic TO-77 (MO-002AF) Metal Package.
•
Ideally Suited For Differential And Low Level Dc Amplifiers
•
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
PD
PD
Total Power Dissipation at TA = 25°C
Derate Above 25°C
Total Power Dissipation at TC = 25°C
TJ
Tstg
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
45V
45V
6V
50mA
One Side
Both Sides
400mW
500mW
2.3mW/°C
2.9mW/°C
800mW
1.3W
4.6mW/°C
7.4mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
One Side Max.
Both Sides Max. Units
RθJA
Thermal Resistance, Junction To Ambient
437
350
°C/W
RθJC
Thermal Resistance, Junction To Case
219
135
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 1 of 3
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side
Symbols
Parameters
Test Conditions
V(BR)CBO
IC = 10µA
IE = 0
45
IC = 10mA
IB = 0
45
V(BR)EBO
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IE = 10µA
IC = 0
6
ICBO
Collector Cut-Off Current
VCB = 40V
IE = 0
10
nA
TA = 150°C
10
µA
(1)
V(BR)CEO
Min.
Typ.
Max.
V
IEBO
Emitter-Cut-Off Current
VEB = 5V
IC = 0
10
ICEO
Collector-Cut-Off Current
VCE = 5V
IB = 0
10
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 1.0mA
IB = 0.1mA
0.35
VBE(on)
Base-Emitter On Voltage
IC = 100µA
VCE = 5V
0.7
IC = 10µA
VCE = 5V
60
IC = 100µA
VCE = 5V
100
IC = 1.0mA
VCE = 5V
150
0.8
(1)
hFE
Forward-current transfer
ratio
(1)
Units
nA
V
ELECTRICAL MATCHING CHARACTERISTICS
hFE1
hFE2
(2)
|VBE1-VBE2|
|∆(VBE1-VBE2)∆TA|
(3)
Forward-current transfer
ratio (gain ratio)
IC = 100µA
VCE = 5V
Base-Emitter Voltage
Differential
Base-Emitter Voltage
Differential Change Due
To Temperature
IC = 100µA
VCE = 5V
10
mV
IC = 100µA
VCE = 5V
25
µV/°C
IC = 500µA
VCE = 5V
6
pF
4
dB
1.0
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forwardcurrent transfer ratio
Cobo
Output Capacitance
(3)
NF
Noise Figure
2
f = 30MHz
VCB = 5V
IE = 0
f = 1.0MHz
IC = 10µA
VCE = 5V
f = 1.0KHz
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) The lower of the two readings is taken as hFE1
(3)
By design only, not a production test
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 2 of 3
SILICON DUAL MATCHED
NPN TRANSISTORS
BFY81
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
6.10 (0.240)
6.60 (0.260)
7.75 (0.305)
8.51 (0.335)
12.7 (0.500)
Min.
1.02
(0.040)
Max.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
4
2.54
(0.100)
5
3
0.74 (0.029)
1.14 (0.045)
6
2
1
45˚
0.71 (0.028)
0.86 (0.034)
TO-77 (MO-002AF)
Underside View
Pin 1
Collector 1
Pin 2
Base 1
Pin 3
Emitter 1
Pin 4
Emitter 2
Pin 5
Base 2
Pin 6
Collector 2
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8502
Issue 1
Page 3 of 3