SILICON DUAL MATCHED NPN TRANSISTORS BFY81 • Dual Silicon Matched Planar Transistors • Hermetic TO-77 (MO-002AF) Metal Package. • Ideally Suited For Differential And Low Level Dc Amplifiers • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current PD PD Total Power Dissipation at TA = 25°C Derate Above 25°C Total Power Dissipation at TC = 25°C TJ Tstg Derate Above 25°C Junction Temperature Range Storage Temperature Range 45V 45V 6V 50mA One Side Both Sides 400mW 500mW 2.3mW/°C 2.9mW/°C 800mW 1.3W 4.6mW/°C 7.4mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters One Side Max. Both Sides Max. Units RθJA Thermal Resistance, Junction To Ambient 437 350 °C/W RθJC Thermal Resistance, Junction To Case 219 135 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 1 of 3 SILICON DUAL MATCHED NPN TRANSISTORS BFY81 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Per Side Symbols Parameters Test Conditions V(BR)CBO IC = 10µA IE = 0 45 IC = 10mA IB = 0 45 V(BR)EBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IE = 10µA IC = 0 6 ICBO Collector Cut-Off Current VCB = 40V IE = 0 10 nA TA = 150°C 10 µA (1) V(BR)CEO Min. Typ. Max. V IEBO Emitter-Cut-Off Current VEB = 5V IC = 0 10 ICEO Collector-Cut-Off Current VCE = 5V IB = 0 10 VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0mA IB = 0.1mA 0.35 VBE(on) Base-Emitter On Voltage IC = 100µA VCE = 5V 0.7 IC = 10µA VCE = 5V 60 IC = 100µA VCE = 5V 100 IC = 1.0mA VCE = 5V 150 0.8 (1) hFE Forward-current transfer ratio (1) Units nA V ELECTRICAL MATCHING CHARACTERISTICS hFE1 hFE2 (2) |VBE1-VBE2| |∆(VBE1-VBE2)∆TA| (3) Forward-current transfer ratio (gain ratio) IC = 100µA VCE = 5V Base-Emitter Voltage Differential Base-Emitter Voltage Differential Change Due To Temperature IC = 100µA VCE = 5V 10 mV IC = 100µA VCE = 5V 25 µV/°C IC = 500µA VCE = 5V 6 pF 4 dB 1.0 DYNAMIC CHARACTERISTICS | hfe | Small signal forwardcurrent transfer ratio Cobo Output Capacitance (3) NF Noise Figure 2 f = 30MHz VCB = 5V IE = 0 f = 1.0MHz IC = 10µA VCE = 5V f = 1.0KHz Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) The lower of the two readings is taken as hFE1 (3) By design only, not a production test Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 2 of 3 SILICON DUAL MATCHED NPN TRANSISTORS BFY81 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.335) 9.40 (0.370) 6.10 (0.240) 6.60 (0.260) 7.75 (0.305) 8.51 (0.335) 12.7 (0.500) Min. 1.02 (0.040) Max. 0.41 (0.016) 0.53 (0.021) 5.08 (0.200) 2.54 (0.100) 4 2.54 (0.100) 5 3 0.74 (0.029) 1.14 (0.045) 6 2 1 45˚ 0.71 (0.028) 0.86 (0.034) TO-77 (MO-002AF) Underside View Pin 1 Collector 1 Pin 2 Base 1 Pin 3 Emitter 1 Pin 4 Emitter 2 Pin 5 Base 2 Pin 6 Collector 2 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8502 Issue 1 Page 3 of 3