Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20NS4SFH zSerise Standard Fast Recovery zLand Size Figure(Unit : mm) zDimensions(Unit : mm) zApplications General rectification RFN20 NS4S ձ zFeatures 1)Low switching loss 2)High current overload capacity LPDS zStructure ROHM : LPDS JEITA : TO263S ձ Manufacture Date zConstruction Silicon epitaxial planer type zTaping Dimensions(Unit : mm) zAbsolute Maximum Ratings(Tc=25°C) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty䍺0.5 430 V Reverse voltage VR 430 V 20 A 100 A Average rectified foward current Io IFSM Forward current surge peak Direct voltage 60Hz half sin wave , Resistive load Tc=30°C 60Hz half sin wave , Non-repetitive at Tj=25°C (*1) Junction temperature Tj 150 °C Storage temperature Tstg 55 to 150 °C (*1) 1-3pin common circuit zElectrical Characteristics(Tj=25°C) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=20A 䠉 1.3 1.55 V Reverse current IR VR=430V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 22 30 ns Rth(j-c) Junction to case 䠉 䠉 3.0 °C/W Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 2012.06 - Rev.A RFN20NS4SFH Data Sheet 100000 100 Tj=150°C Tj=125°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C 1 Tj=125°C Tj=75°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=25°C 0.1 1 0 500 1000 1500 2000 2500 0 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1350 100 1340 IF=20A Tj=25°C 1330 VR=430V Tj=25°C REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 50 1320 1310 1300 1290 1280 AVE:1298mV 10 AVE:15.7nA 1270 1260 1250 1 IR DISPERSION MAP VF DISPERSION MAP 1000 300 295 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 100 10 290 f=1MHz VR=0V 285 Tj=25°C 280 275 270 265 260 AVE:268pF 255 250 245 240 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.06 - Rev.A RFN20NS4SFH Data Sheet 300 30 RESERVE RECOVERY TIME:trr(ns) ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 280 260 AVE:277A 240 220 200 IFSM 180 8.3ms IF=0.5A IR=1.0A Irr=0.25×IR 25 Tj=25°C 20 15 10 AVE:21.7ns 5 1cyc. 160 0 trr DISPERSION MAP IFSM DISPERSION MAP 1000 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 100 10 IFSM time 100 8.3ms 8.3ms 1cyc. 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME:t(ms) IFSM-t CHARACTERISTICS 100 4 AVE:2.58kV 3 2 AVE:0.63kV 1 C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(kV) 5 0 100 Rth(j-c) 1 0.1 0.001 C=100pF R=1.5kΩ 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 10 3/4 2012.06 - Rev.A RFN20NS4SFH Data Sheet 35 70 D.C. 30 60 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) D=0.8 D=0.5 half sin wave 40 D=0.2 D=0.1 30 D=0.05 20 0A Io 0V VR t 25 T 20 D.C. 15 D=0.8 D=0.5 half sin wave D=0.2 D=0.1 10 D=0.05 5 10 D=t/T VR=430V Tj=150°C 0 0 0 5 10 15 20 25 30 0 35 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 35 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 0A Io 0V VR t D=0.8 25 T D=0.5 D=t/T VR=430V Tj=150°C 20 half sin wave 15 D=0.2 10 D=0.1 D=0.05 5 0 0 30 60 90 120 150 CASE TEMPARATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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