Super Fast Recovery Diode RF071L4S Dimensions(Unit : mm) Series Standard Fast Recovery Land size figure(Unit : mm) 2.0 2.0 4.2 Applications General rectification PMDS Features 1)Small power mold type.(PMDS) 2)high switching speed 3)Low forward voltage Taping dimensions(Unit : mm) 4.0±0.1 2.0±0.05 0.3 φ1.55±0.05 12±0.2 5.5±0.05 9.5±0.1 5.3±0.1 0.05 1.75±0.1 Construction Silicon epitaxial planer Structure φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Tl=25C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM VR Io Forward current surge peak IFSM Junction temperature Storage temperature Tj Tstg Electrical characteristics(Tj=25C) Parameter Conditions Limits Unit D0.5 Direct voltage Glass epoxy substrate mounted Tl=120C 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25C 400 400 1 V V A 15 A 150 -55to+150 C C Symbol Conditions Min. Typ. Max. Unit Forward voltage VF IF=0.7A - 1 1.25 V Reverse current Reverse recovery time IR VR=400V IF=0.5A,IR=1A,Irr=0.25×IR - 0.01 10 trr junction to lead 20 - 25 23 μA ns Rth(j-l) - Thermal resistance www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 C/W 2010.02 - Rev.A RF071L4S Data Sheet Electrical characteristics curves 100 Tj=125C Tj=150C 0.1 Tj=25C Tj=75C 0.01 100 0.001 Tj=125C 10 Tj=75C 1 Tj=25C 0.1 500 1000 1500 0 1000 AVE : 980.8mV 300 400 0 10 15 20 25 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 1 AVE : 4.2nA 30 AVE : 29.2pF 20 10 Ct DISPERSION MAP 1000 30 RESERVE RECOVERY TIME : trr(ns) 1cyc 60 8.3ms 40 AVE : 41.2A 20 IF=0.5A IR=1A Irr=0.25*IR Tj=25C 25 20 15 AVE : 20.1ns 10 5 Ifsm 8.3ms 100 10 1 1 10 trr DISPERSION MAP 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 100 10 Ifsm t 1000 25 AVE : 14.1kV 20 15 10 AVE : 3.40kV 5 1 0 10 TIME : t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 100 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 2/3 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TRANSIENT THAERMAL IMPEDANCE : Rth (C/W) IFSM DISRESION MAP 8.3ms 1cyc 0 0 30 f=1MHz VR=0V Tj=25C IR DISPERSION MAP 80 1 5 40 Tj=25C VR=400V n=30pcs VF DISPERSION MAP PEAK SURGE FORWARD CURRENT : I FSM(A) 200 0.1 900 PEAK SURGE FORWARD CURRENT : I FSM(A) 100 10 IF=0.7A Tj=25C n=30pcs REVERSE CURRENT : I R(nA) FORWARD VOLTAGE : V F(mV) 1100 Ifsm 10 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 1050 f=1MHz 1 2000 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 0 950 Tj=150C PEAK SURGE FORWARD CURRENT : I FSM(A) 1 CAPACITANCE BETWEEN TERMINALS : Ct(pF) 1000 REVERSE CURRENT : I R(nA) FORWARD CURRENT : I F(A) 10 IM=10mA IF=100mA Rth(j-a) 100 1ms time 300s Rth(j-l) 10 1 On Glass Epoxi Board 0.1 0.001 0.01 0.1 1 10 100 1000 TIME : t(s) Rth-t CHARACTERISTICS 2010.02 - Rev.A RF071L4S Data Sheet Io 0A 0V 0.8 0.6 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) FORWARD POWER DISSIPATION : Pf(W) half sin wave D=0.5 D=0.2 D=0.1 D=0.05 0.4 D.C. 1.4 T D=t/T VR=320V Tj=150C D=0.8 1.2 1 D=0.5 half sin wave 0.8 0.6 D=0.2 0.4 0.2 D=0.05 0.2 D=0.1 0 0.3 0.6 0.9 1.2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1.5 1.8 0 30 60 90 120 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) 3/3 T 150 D=t/T VR=320V Tj=150C 1.6 D.C. 1.4 D=0.8 D=0.5 1.2 1 half sin wave 0.8 D=0.2 0.6 0.4 D=0.05 0.2 0 0 1.8 VR t 1.6 D=0.8 1 0V AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D.C. Io 0A 1.8 1.2 VR t D=0.1 0 0 30 60 90 120 150 LEAD TEMPARATURE : Tl(C) Derating Curve"(Io-Tl) 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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