Fast Recovery Diode RF501B2S zDimensions（Unit : mm ） zLand size figure(Unit : mm) 6.0 zFeatures 1)Power mold type.(CPD) 2)High reliability 3)Low Vf 4)Very fast recovery 5)Low switching loss 1.6 CPD 1.6 3.0 2.0 6.0 zApplications General rectification 2.3 2.3 zStructure zConstruction Silicon epitaxial planer (2) (1) (3) zTaping specifications(Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol 200 VRM 200 VR 5 Io 40 IFSM 150 Tj -55～+150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=128°C Unit V V A A Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc)(*1 Junction temperature Storage temperature zElectrical characteristics(Ta=25°C) Parameter Forward voltage Reverse current Reverse recovery time www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. ℃ ℃ Symbol VF IR Min. - Typ. 0.86 0.015 Max. 0.92 1 Unit V µA trr - 15 30 ns 1/3 Conditions IF=5A VR=200V IF=0.5A,IR=1A,Irr=0.25*I R 2009.11 - Rev.G RF501B2S Data Sheet zElectrical characteristic curves Ta=150°C 10000 10 1000 Ta=125°C f=1MHz Ta=125°C 0.1 Ta=25°C Ta=75°C Ta=-25°C 0.01 1000 0.001 Ta=75°C 100 Ta=25°C 10 Ta=-25°C 1 100 150 200 870 860 AVE:856.6mV 90 80 70 60 50 40 AVE : 10.7nA 30 20 10 840 VF DISPERSION MAP 1cyc 8.3m 150 AVE : 88.0A 100 50 RESERVE RECOVERY TIME : trr(ns) PEAK SURGE FORWARD CURRENT : I FSM(A) 190 180 170 AVE : 74.9pF 160 Ct DISPERSION MAP 1000 30 200 Ta=25°C f=1MHz VR=0V n=10pcs IR DISPERSION MAP 300 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE : 14.5ns 5 Ifsm 8.3ms 8.3ms 1cyc 100 10 1 0 0 1 IFSM DISPERSION MAP www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 30 150 0 Ifsm 10 20 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS 200 Ta=25°C VR=200V n=30pcs CAPACITANCE BETWEEN TERMINALS : Ct(pF) 880 250 0 100 REVERSE CURRENT : IR(nA) FORWARD VOLTAGE : V F(mV) 50 REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 890 Ta=25°C IF=5A n=30pcs\ 10 1 0 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 850 100 0.1 100 200 300 400 500 600 700 800 900 100 0 PEAK SURGE FORWARD CURRENT : I FSM(A) 0 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 REVERSE CURRENT : IR(nA) FORWARD CURRENT : :I F(A) Ta=150°C trr DISPERSION MAP 2/3 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 2009.11 - Rev.H Data Sheet RF501B2S 100 1000 10 Ifsm t 100 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0A Io AVERAGE RECTIFIED FORWARD CURRENT : lo(A) 1 1ms 8 T IF=1A D=t/T VR=100V Tj=150°C 6 4 Sin(θ=180) 2 0 25 50 75 100 Sin(θ=180) 4 2 tim 0 0.1 10 1000 0 10 0A Io 0V VR t DC T 8 125 AMBIENT TEMPERATURE : Ta(°C) Derating Curveﾞ(Io-Ta) www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 150 4 6 8 10 30 D=t/T VR=100V Tj=150°C D=1/2 6 4 Sin(θ=180) 2 2 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0 0 D=1/2 6 300us VR t D=1/2 IM=100mA No break at 30kV No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 0V DC Rth(j-c) TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 10 DC 8 10 0.1 0.001 10 1 Rth(j-a) FORWARD POWER DISSIPATION : Pf(W) TRANSIENT THAERMAL IMPEDANCE : Rth (°C/W) PEAK SURGE FORWARD CURRENT : I FSM(A) Mounted on epoxy board 20 15 10 5 0 0 25 50 75 100 CASE TEMPARATURE : Tc(°C) Derating Curveﾞ(Io-Tc) 3/3 125 150 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 2009.11 - Rev.H Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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