RFUH10TB4SFH : Diodes

Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RFUH10TB4SFH
zSerise
Super Fast Recovery
zDimensions(Unit : mm)
zStructure
㻠㻚㻡㼼㻜㻚㻟
䚷䚷䚷㻌㻜㻚㻝
zApplications
General rectification
㻞㻚㻤㼼㻜㻚㻞
䚷䚷䚷㻌㻜㻚㻝
㻡㻚㻜㼼㻜㻚㻞
FUH10T
B4S ձ
㻝㻟㻚㻡㻹㻵㻺
㻝㻚㻞
㻝㻚㻟
zConstruction
Silicon epitaxial planer type
㻝㻡㻚㻜㼼㻜㻚㻠
㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞
㻤㻚㻜
zFeatures
1)Ultra low switching loss
2)High current overload capacity
㻤㻚㻜㼼㻜㻚㻞
㻝㻞㻚㻜㼼㻜㻚㻞
㻝㻜㻚㻜㼼㻜㻚㻟
䚷䚷䚷㻌㻜㻚㻝
㻜㻚㻤
㻔㻝㻕 㻔㻞㻕 㻔㻟㻕
2.54d0.5
2.54d0.5
㻜㻚㻣㼼㻜㻚㻝
㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡
㻞㻚㻢㼼㻜㻚㻡
ROHM : TO220FN
ձ Manufacture Year Week
zAbsolute Maximum Ratings(Tc=25°C)
Symbol
Conditions
Limits
Unit
Repetitive peak reverse voltage
Parameter
VRM
Duty䍺0.5
430
V
Reverse voltage
VR
Direct voltage
430
V
Average rectified foward current
Io
10
A
IFSM
Forward current surge peak
Junction temperature
Storage temperature
60Hz half sin wave , Resistive load
Tc=90°C
60Hz half sin wave , Non-repetitive at Tj=25°C
80
A
Tj
150
°C
Tstg
55 to 150
°C
zElectrical Characteristics(Tj=25°C)
Parameter
Conditions
Min.
Typ.
Max.
Unit
VF
IF=10A
䠉
1.4
1.7
V
Reverse current
IR
VR=430V
䠉
0.05
10
μA
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25×IR
䠉
15
25
ns
Rth(j-c)
Junction to case
䠉
䠉
3.0
°C/W
Symbol
Forward voltage
Thermal resistance
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1/4
㻌 2012.06 - Rev.A
RFUH10TB4SFH
Data Sheet
100000
100
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
10000
10
Tj=150°C
Tj=125°C
Tj=75°C
1
Tj=125°C
1000
Tj=75°C
100
Tj=25°C
10
Tj=25°C
1
0.1
0
500
1000
1500
2000
0
2500
50
100
150
200
250
300
350
400
450
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
1000
1450
1440
VR=430V
Tj=25°C
IF=10A
1430
Tj=25°C
1410
REVERSE CURRENT:IR(nA)
FORWARD VOLTAGE:VF(mV)
1420
1400
1390
1380
1370
1360
1350
1340
AVE:1371mV
1330
100
AVE:17.6nA
10
1320
1310
1300
1
VF DISPERSION MAP
IR DISPERSION MAP
200
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
100
10
190
f=1MHz
VR=0V
180
Tj=25°C
170
160
150
140
130
AVE:150pF
120
110
100
1
0
5
10
15
20
25
30
Ct DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
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2/4
2012.06 - Rev.A
RFUH10TB4SFH
30
200
RESERVE RECOVERY TIME:trr(ns)
180
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
AVE:148A
160
140
120
100
IFSM
80
8.3ms
IF=0.5A
IR=1.0A
Irr=0.25×IR
25
Tj=25°C
20
15
AVE:15.1ns
10
5
1cyc.
60
0
IFSM DISPERSION MAP
trr DISPERSION MAP
1000
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
1000
100
10
IFSM
100
10
8.3ms 8.3ms
IFSM
time
1cyc.
1
1
1
10
1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
AVE:2.68kV
3
2
AVE:0.54kV
C=200pF
R=0Ω
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
4
0
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
5
1
10
Rth(j-c)
1
0.1
0.001
C=100pF
R=1.5kΩ
0.1
10
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2012 ROHM Co., Ltd. All rights reserved.
Rth(j-a)
10
3/4
2012.06 - Rev.A
RFUH10TB4SFH
Data Sheet
18
35
16
D.C.
30
D=0.8
14
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
FORWARD POWER
DISSIPATION:Pf(W)
25
D=0.5
half sin wave
20
D=0.2
15
D=0.1
D=0.05
10
5
Io
VR
t
D.C.
12
T
D=0.8
10
D=t/T
VR=430V
Tj=150°C
D=0.5
8
half sin wave
6
D=0.2
D=0.1
4
D=0.05
2
0
0
0
2
4
6
8
10
12
14
16
0
18
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
18
D.C.
16
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
0A
Io
0V
VR
t
D=0.8
14
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
T
12
D=t/T
VR=430V
Tj=150°C
D=0.5
10
half sin wave
8
6
D=0.2
4
D=0.1
2
D=0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
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© 2012 ROHM Co., Ltd. All rights reserved.
4/4
2012.06 - Rev.A
Notice
Notes
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R1120A