Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFUH10TB4SFH zSerise Super Fast Recovery zDimensions(Unit : mm) zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 zApplications General rectification 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 㻡㻚㻜㼼㻜㻚㻞 FUH10T B4S ձ 㻝㻟㻚㻡㻹㻵㻺 㻝㻚㻞 㻝㻚㻟 zConstruction Silicon epitaxial planer type 㻝㻡㻚㻜㼼㻜㻚㻠 㻌㻌㻌㻌㻌䚷㻌㻜㻚㻞 㻤㻚㻜 zFeatures 1)Ultra low switching loss 2)High current overload capacity 㻤㻚㻜㼼㻜㻚㻞 㻝㻞㻚㻜㼼㻜㻚㻞 㻝㻜㻚㻜㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻜㻚㻤 㻔㻝㻕 㻔㻞㻕 㻔㻟㻕 2.54d0.5 2.54d0.5 㻜㻚㻣㼼㻜㻚㻝 㻌㻌㻌㻌㻌㻌㻌㻜㻚㻜㻡 㻞㻚㻢㼼㻜㻚㻡 ROHM : TO220FN ձ Manufacture Year Week zAbsolute Maximum Ratings(Tc=25°C) Symbol Conditions Limits Unit Repetitive peak reverse voltage Parameter VRM Duty䍺0.5 430 V Reverse voltage VR Direct voltage 430 V Average rectified foward current Io 10 A IFSM Forward current surge peak Junction temperature Storage temperature 60Hz half sin wave , Resistive load Tc=90°C 60Hz half sin wave , Non-repetitive at Tj=25°C 80 A Tj 150 °C Tstg 55 to 150 °C zElectrical Characteristics(Tj=25°C) Parameter Conditions Min. Typ. Max. Unit VF IF=10A 䠉 1.4 1.7 V Reverse current IR VR=430V 䠉 0.05 10 μA Reverse recovery time trr IF=0.5A,IR=1A,Irr=0.25×IR 䠉 15 25 ns Rth(j-c) Junction to case 䠉 䠉 3.0 °C/W Symbol Forward voltage Thermal resistance WWWROHMCOM Ú2/(-#O,TD!LLRIGHTSRESERVED 1/4 㻌 2012.06 - Rev.A RFUH10TB4SFH Data Sheet 100000 100 Tj=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 10000 10 Tj=150°C Tj=125°C Tj=75°C 1 Tj=125°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=25°C 1 0.1 0 500 1000 1500 2000 0 2500 50 100 150 200 250 300 350 400 450 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1000 1450 1440 VR=430V Tj=25°C IF=10A 1430 Tj=25°C 1410 REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 1420 1400 1390 1380 1370 1360 1350 1340 AVE:1371mV 1330 100 AVE:17.6nA 10 1320 1310 1300 1 VF DISPERSION MAP IR DISPERSION MAP 200 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 100 10 190 f=1MHz VR=0V 180 Tj=25°C 170 160 150 140 130 AVE:150pF 120 110 100 1 0 5 10 15 20 25 30 Ct DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.06 - Rev.A RFUH10TB4SFH 30 200 RESERVE RECOVERY TIME:trr(ns) 180 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) Data Sheet AVE:148A 160 140 120 100 IFSM 80 8.3ms IF=0.5A IR=1.0A Irr=0.25×IR 25 Tj=25°C 20 15 AVE:15.1ns 10 5 1cyc. 60 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 100 10 IFSM 100 10 8.3ms 8.3ms IFSM time 1cyc. 1 1 1 10 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 AVE:2.68kV 3 2 AVE:0.54kV C=200pF R=0Ω TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) ELECTROSTATIC DISCHARGE TEST ESD(kV) 4 0 100 TIME:t(ms) IFSM-t CHARACTERISTICS 5 1 10 Rth(j-c) 1 0.1 0.001 C=100pF R=1.5kΩ 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Rth(j-a) 10 3/4 2012.06 - Rev.A RFUH10TB4SFH Data Sheet 18 35 16 D.C. 30 D=0.8 14 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 25 D=0.5 half sin wave 20 D=0.2 15 D=0.1 D=0.05 10 5 Io VR t D.C. 12 T D=0.8 10 D=t/T VR=430V Tj=150°C D=0.5 8 half sin wave 6 D=0.2 D=0.1 4 D=0.05 2 0 0 0 2 4 6 8 10 12 14 16 0 18 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 18 D.C. 16 30 60 90 120 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0A Io 0V VR t D=0.8 14 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V T 12 D=t/T VR=430V Tj=150°C D=0.5 10 half sin wave 8 6 D=0.2 4 D=0.1 2 D=0.05 0 0 30 60 90 120 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/4 2012.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. 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