ROHM RF2001T4S_10

Fast recovery diode
RF2001T4S
Applications
General rectification
 Dimensions (Unit : mm)
Structure
4.5±0.3
0.1
Features
1) High reliability.(TO-220)
2) Low noise.
3) Very fast switching .
15.0±0.4
0.2
8.0
8.0±0.2
12.0±0.2
①
(1) (2) (3)
5.0±0.2
1.2
13.5MIN
Construction
Silicon epitaxial planar
2.8±0.2
0.1
10.0±0.3
0.1
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
①
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)(*1)
Junction temperature
Storage temperature
430
400
20
100
150
-55 to +150
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
(*1)Business frequency, Rating of R-load, Tc=94CMAX.
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Symbol
VF
C
C
Min.
Typ.
Max.
Unit
-
1.6
10
V
μA
-
30
ns
Reverse current
IR
-
Reverse recovery time
trr
-
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Unit
V
V
A
A
1/3
Conditions
IF=20A
VR=400V
IF=0.5A,IR=1A Irr=0.25*I R
2010.03 - Rev.B
RF2001T4S
Data Sheet
Electrical characteristics curves
100
1000000
1000
Ta=150C
100000
REVERSE CURRENT:IR(nA)
10
Ta=25C
Ta=150C
Ta=-25C
1
0.1
10000
Ta=75C
1000
Ta=25C
100
Ta=-25C
10
10
0
200 400 600 800 1000 1200 1400 1600 1800
50
100 150 200 250 300 350 400 450
FORWARD VOLTAGE:V F(mV)
VF-IF CHARACTERISTICS
0
Ta=25C
IF=20A
n=20pcs
REVERSE CURRENT:IR(uA)
1400
AVE:1399mV
Ta=25C
VR=400V
n=20pcs
400
300
250
200
150
AVE:55.8nA
100
30
Ta=25C
f=1MHz
VR=0V
n=10pcs
460
440
AVE:442.1pF
420
400
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
30
1cyc
Ifsm
8.3ms
200
AVE:236.0A
100
50
RESERVE RECOVERY TIME:trr(ns)
300
25
20
AVE:22.6ns
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
15
10
5
0
0
8.3ms 8.3ms
100
1cyc
10
1
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
trr DISPERSION MAP
IFSM DISPERSION MAP
1000
100
100
10
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
100
D=1/2
45
IF=1A
DC
40
1ms
Rth(j-a)
time
10
300us
Rth(j-c)
1
0.1
0.001
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
t
100
50
IM=100mA
Ifsm
PEAK SURGE
FORWARD CURRENT:I FSM(A)
25
50
0
0.1
20
480
350
1300
150
15
500
450
1500
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
500
1600
250
5
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0
FORWARD VOLTAGE:V F(mV)
100
1
0.01
PEAK SURGE
FORWARD CURRENT:I FSM(A)
f=1MHz
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT:I F(A)
Ta=125C
Ta=125C
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=75C
Sin(=180)
35
30
25
20
15
10
5
0
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
2/3
100
1000
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2010.03 - Rev.B
45
40
50
0A
0A
Io
45
0V
0V
VR
40
t
35
T
30
D=1/2
D=t/T
VR=200V
Tj=150C
DC
25
20
15
10
No break at 30kV
VR
t
DC
35
T
D=t/T
VR=200V
Tj=150C
30
D=1/2
25
20
15
Sin(=180)
10
25
50
No break at 30kV
25
20
15
AVE:8.8kV
10
5
0
0
0
0
30
Io
5
Sin(=180)
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
50
Data Sheet
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
RF2001T4S
75
100
125
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
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©2010 ROHM Co., Ltd. All rights reserved.
150
0
25
50
75
100
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
3/3
125
150
C=200pF
R=0
C=100pF
R=1.5k
C=150pF
R=330
ESD DISPERSION MAP
2010.03 - Rev.B
Notice
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R1010A