UNITPOWER UD3003

UD3003
P-Ch 30V Fast Switching MOSFETs
General Description
Product Summery
The UD3003 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The UD3003 meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
BVDSS
RDS(ON)
ID
-30V
20mΩ
-35A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
Features
TO252 Pin Configuration
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=100℃
[email protected]=25℃
10s
Steady State
Units
-30
V
±20
V
1
-35
A
1
-22
A
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
1
-13.4
1
-10.7
Continuous Drain Current, VGS @ -10V
[email protected]=70℃
Continuous Drain Current, VGS @ -10V
IDM
Pulsed Drain Current2
3
-8.5
A
-6.8
A
-70
A
EAS
Single Pulse Avalanche Energy
176
mJ
IAS
Avalanche Current
-38
A
34.7
W
[email protected]=25℃
4
Total Power Dissipation
4
[email protected]=25℃
Total Power Dissipation
5
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Typ.
Thermal Resistance Junction-Ambient
1
1
Thermal Resistance Junction-Ambient (t ≤10s)
1
Thermal Resistance Junction-Case
1
Max.
Unit
---
62
℃/W
---
25
℃/W
---
3.6
℃/W
UD3003
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
VGS(th)
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-30
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.022
---
V/℃
VGS=-10V , ID=-10A
---
16
20
VGS=-4.5V , ID=-6A
---
25
32
-1.0
-1.5
-2.5
V
---
4.6
---
mV/℃
VDS=-24V , VGS=0V , TJ=25℃
---
---
-1
VDS=-24V , VGS=0V , TJ=55℃
---
---
-5
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-10A
---
5
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13
26
Ω
Qg
Total Gate Charge (-4.5V)
---
12.5
17.5
Qgs
Gate-Source Charge
---
5.4
7.6
Qgd
Gate-Drain Charge
---
5
7
Td(on)
VDS=-15V , VGS=-4.5V , ID=-15A
Turn-On Delay Time
uA
nC
---
4.4
8.8
Rise Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
---
11.2
20
Turn-Off Delay Time
ID=-15A
---
34
68
Fall Time
---
18
36
Ciss
Input Capacitance
---
1345
1883
Coss
Output Capacitance
---
194
272
Crss
Reverse Transfer Capacitance
---
158
220
Min.
Typ.
Max.
Unit
49
---
---
mJ
Min.
Typ.
Max.
Unit
---
---
-35
A
---
---
-70
A
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
5
Single Pulse Avalanche Energy
VDD=-25V , L=0.1mH , IAS=-20A
Diode Characteristics
Symbol
IS
ISM
Parameter
Conditions
1,6
Continuous Source Current
2,6
Pulsed Source Current
2
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-15A , dI/dt=100A/µs ,
---
12.4
---
nS
Qrr
Reverse Recovery Charge
TJ=25℃
---
5
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
UD3003
P-Ch 30V Fast Switching MOSFETs
Typical Characteristics
30
ID=-12A
27
VGS=-10V
VGS=-7V
21
44
RDSON (mΩ)
-ID Drain Current (A)
24
VGS=-5V
18
VGS=-4.5V
15
VGS=-3V
12
30
9
6
3
0
16
0
0.5
1
1.5
-VDS , Drain-to-Source Voltage (V)
2
4
Fig.1 Typical Output Characteristics
8
10
10
ID=-15A
-VGS Gate to Source Voltage (V)
10
8
6
TJ=150℃
TJ=25℃
4
2
0
0.2
0.4
0.6
0.8
1
8
6
VDS=15V
4
VDS=24V
2
0
0
-VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
5
10
15
20
QG , Total Gate Charge (nC)
25
30
Fig.4 Gate-Charge Characteristics
2.0
Normalized On Resistance
1.5
Normalized VGS(th)
-VGS (V)
Fig.2 On-Resistance v.s Gate-Source
12
-IS Source Current(A)
6
1.5
1
1.0
0.5
0.5
0
-50
0
50
100
TJ ,Junction Temperature ( ℃)
-50
150
0
50
100
TJ , Junction Temperature (℃)
Fig.6 Normalized RDSON v.s TJ
Fig.5 Normalized VGS(th) v.s TJ
3
150
UD3003
P-Ch 30V Fast Switching MOSFETs
10000
100.00
F=1.0MHz
1ms
Ciss
Capacitance (pF)
100us
10.00
10ms
1000
-ID (A)
Coss
100
100ms
DC
1.00
Crss
0.10
o
Tc=25 C
Single Pulse
0.01
10
1
5
9
13
17
-VDS Drain to Source Voltage(V)
21
0.1
25
Fig.7 Capacitance
1
10
-VDS (V)
100
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.1
0.2
0.1
0.05
0.02
0.01
PDM
0.01
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TC + PDM x RθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
4