UD3003 P-Ch 30V Fast Switching MOSFETs General Description Product Summery The UD3003 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The UD3003 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. BVDSS RDS(ON) ID -30V 20mΩ -35A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Features TO252 Pin Configuration z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ 10s Steady State Units -30 V ±20 V 1 -35 A 1 -22 A Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V 1 -13.4 1 -10.7 Continuous Drain Current, VGS @ -10V ID@TA=70℃ Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current2 3 -8.5 A -6.8 A -70 A EAS Single Pulse Avalanche Energy 176 mJ IAS Avalanche Current -38 A 34.7 W PD@TC=25℃ 4 Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 5 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA RθJA RθJC Parameter Typ. Thermal Resistance Junction-Ambient 1 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case 1 Max. Unit --- 62 ℃/W --- 25 ℃/W --- 3.6 ℃/W UD3003 P-Ch 30V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-10A --- 16 20 VGS=-4.5V , ID=-6A --- 25 32 -1.0 -1.5 -2.5 V --- 4.6 --- mV/℃ VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 VGS=VDS , ID =-250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 26 Ω Qg Total Gate Charge (-4.5V) --- 12.5 17.5 Qgs Gate-Source Charge --- 5.4 7.6 Qgd Gate-Drain Charge --- 5 7 Td(on) VDS=-15V , VGS=-4.5V , ID=-15A Turn-On Delay Time uA nC --- 4.4 8.8 Rise Time VDD=-15V , VGS=-10V , RG=3.3Ω, --- 11.2 20 Turn-Off Delay Time ID=-15A --- 34 68 Fall Time --- 18 36 Ciss Input Capacitance --- 1345 1883 Coss Output Capacitance --- 194 272 Crss Reverse Transfer Capacitance --- 158 220 Min. Typ. Max. Unit 49 --- --- mJ Min. Typ. Max. Unit --- --- -35 A --- --- -70 A Tr Td(off) Tf VDS=-15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=-25V , L=0.1mH , IAS=-20A Diode Characteristics Symbol IS ISM Parameter Conditions 1,6 Continuous Source Current 2,6 Pulsed Source Current 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 12.4 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 5 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-38A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 UD3003 P-Ch 30V Fast Switching MOSFETs Typical Characteristics 30 ID=-12A 27 VGS=-10V VGS=-7V 21 44 RDSON (mΩ) -ID Drain Current (A) 24 VGS=-5V 18 VGS=-4.5V 15 VGS=-3V 12 30 9 6 3 0 16 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 4 Fig.1 Typical Output Characteristics 8 10 10 ID=-15A -VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 1 8 6 VDS=15V 4 VDS=24V 2 0 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 5 10 15 20 QG , Total Gate Charge (nC) 25 30 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) -VGS (V) Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 6 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) -50 150 0 50 100 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Fig.5 Normalized VGS(th) v.s TJ 3 150 UD3003 P-Ch 30V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 1ms Ciss Capacitance (pF) 100us 10.00 10ms 1000 -ID (A) Coss 100 100ms DC 1.00 Crss 0.10 o Tc=25 C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4