SST2629S

SST2629S
-1.5A , -100V , RDS(ON) 550 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST2629S utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device. The SOT-26
package is universally used for all commercial-industrial
applications.
SOT-26
D
H
A
FEATURES
Simple Drive Requirement
Smaller Outline Package
Surface mount package
E
REF.
MARKING
2629S
A
B
C
D
E
F
C
B
J
L
F
K
G
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.20 REF.
1.40
1.80
0.95 REF.
0.60 REF.
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.37 REF.
0.30
0.55
0.12 REF.
0.10
Date Code
TOP VIEW
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-26
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
-100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current @ VGS=10V
1
TA=25°C
-1.5
ID
TA=70°C
Pulsed Drain Current
Power Dissipation
2
3
TA=25°C
IDM
-5
A
PD
1.1
W
0.009
W / °C
-55~150
°C
113
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
A
-1.2
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
1
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SST2629S
-1.5A , -100V , RDS(ON) 550 mΩ
Ω
P-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-100
-
-
V
VGS=0, ID= -250uA
Gate-Threshold Voltage
VGS(th)
-1
-
-2.5
V
VDS=VGS, ID= -250uA
IGSS
-
-
±100
nA
VGS=±20V
-
-
-1
µA
VDS= -80V, VGS=0
-
-
-5
-
-
550
-
-
600
-
3
-
Gate-Body Leakage Current
Drain-Source Leakage Current
TJ=25°C
IDSS
TJ=55°C
Drain-Source On-Resistance
2
Forward Transconductance
RDS(ON)
gfs
mΩ
VGS= -10V, ID= -1.2A
VGS= -4.5V, ID= -1A
S
VDS= -5V, ID= -1A
Dynamic
Total Gate Charge
Qg
-
9.3
-
Gate-Source Charge
Qgs
-
1.75
-
Gate-Drain (‘Millre’) Charge
Qgd
-
1.25
-
Td(on)
-
2
-
Tr
-
18.4
-
Td(off)
-
19.6
-
Tf
-
19.6
-
Ciss
-
511
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Coss
-
29
-
Reverse Transfer Capacitance
Crss
-
17
-
nC
VDS= -50V,
VGS= -10V,
ID= -1A
nS
VDS= -50V,
VGS= -10V,
RG=3.3Ω,
ID= -0.5A
pF
VGS=0,
VDS= -15V,
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
-1.2
V
IS= -1A, VGS=0
IS
-
-
-1.5
A
ISM
-
-
-5
A
VG= VD=0
Force Current
Reverse Recovery Time
TRR
-
27
-
ns
Reverse Recovery Charge
QRR
-
36
-
nC
Continuous Source Current
Pulsed Source Current
2,4
1,4
IF= -1A,
dI/dt=100A/us
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper, 156℃/W when mounted on Min. copper pad.
2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%.
3. The power dissipation is limited by 150℃ junction temperature.
4. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SST2629S
Elektronische Bauelemente
-1.5A , -100V , RDS(ON) 550 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SST2629S
Elektronische Bauelemente
-1.5A , -100V , RDS(ON) 550 mΩ
Ω
P-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
16-Mar-2015 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4