SECOS SSM0410

SSM0410
3.5 A, 100V, RDS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSM0410 provide the designer with best combination of fast switching,
ruggedized device design, low on resistance and cost-effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES



SOT-223
Fast Switching
Low On-resistance
Logic Level Compatible
A
M
4
Top View
CB
1
2
K
MARKING
E
L
3
D
F
G
H
J
Drain
REF.
Gate
A
B
C
D
E
F
Source
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
REF.
G
H
J
K
L
M
Millimeter
Min.
Max.
0.10
0.25
0.35
2.30 REF.
2.90
3.10
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
SYMBOL
RATING
UNIT
Drain – Source Voltage
PARAMETER
VDS
100
V
Gate – Source Voltage
VGS
±20
V
3.5
A
2.2
A
3
Continuous Drain Current , [email protected]
TA = 25°C
TA = 70°C
ID
1,2
IDM
14
A
Total Power Dissipation
PD
2.7
W
0.02
W/°C
TJ, TSTG
-65~150
°C
45
°C/W
Pulsed Drain Current
Linear Derating Factor
Operating Junction & Storage Temperature Range
THERMAL DATA
Maximum Junction–Ambient
http://www.SeCoSGmbH.com/
11-May-2010 Rev. A
3
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SSM0410
3.5 A, 100V, RDS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
PARAMETER
BVDSS
100
-
-
V
Gate Threshold Voltage
TEST CONDITION
VGS=0V, ID =1mA
VGS(TH)
1.0
-
2.5
V
VDS= 10V, ID =1mA
Forward Transconductance
gFS
-
4.0
-
S
VDS=10V, ID=2.5A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
μA
-
-
10
-
-
0.22
-
-
0.28
Qg
-
11.2
-
Gate-Source Charge
Qgs
-
4.4
-
Gate-Drain (“Miller”) Charge
Qgd
-
3.0
-
I D=3.5A
VDD=30V
Drain-Source On Resistance
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
RDS(ON)
Td(ON)
-
9
-
Tr
-
9.4
-
Td(OFF)
-
26.8
-
Tf
-
2.6
-
Input Capacitance
CISS
-
975
-
Output Capacitance
COSS
-
38
-
Reverse Transfer Capacitance
CRSS
-
27
-
VDS=100V, VGS=0V
VGS=10V, ID=2.6A
Ω
VGS=5.0V, ID=1.7A
V GS=5V
nC
VDS=80V
V GS=10V
nS
I D=1A
RG=6Ω, RL=30Ω
VDS=25V
pF
VGS=0V
f=1MHz
SOURCE-DRAIN DIODE
Forward On Voltage
3
VSD
-
-
1.5
V
VGS=0V, IS=3.5A
Note:
1. Pulse width limited by Maximum junction temperature.
2. Pulse width ≦ 300 μs, Duty cycle ≦ 2%
2
3. Surface mounted on 1 in copper pad of FR4 board; 120°C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
11-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SSM0410
Elektronische Bauelemente
3.5 A, 100V, RDS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SSM0410
Elektronische Bauelemente
3.5 A, 100V, RDS(ON) 220mΩ
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
11-May-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4