SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch. B L D M FEATURES A Simple Drive Requirement Lower On-resistance Low Gate Charge N J H MARKING REF. 4953SS C A B C D E F G = Date Code G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ Leader Size S1 D1 SOP-8 3K 13’ inch G1 D1 S2 D2 G2 D2 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V TA = 25°C Continuous Drain Current @ VGS=10V 1 TA = 100°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 Avalanche Current Total Power Dissipation 4 TA = 25°C Operating Junction & Storage Temperature Range ID -6 -4 A IDM -12 A EAS 108 mJ IAS 19 A PD 1.5 W TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings 1 Thermal Resistance Junction-Ambient (Max.) RθJA 83 °C / W Thermal Resistance Junction-Case 1 (Max.) RθJC 60 °C / W http://www.SeCoSGmbH.com/ 21-Jul-2014 Rev. F Any changes of specification will not be informed individually. Page 1 of 4 SSG4953 -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition Static Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0V, ID= -250μA Gate-Threshold Voltage VGS(th) -1 - -2.5 V VDS=VGS, ID = -250μA Forward Transfer Conductance Gfs - 6 - S VDS= -10V, ID= -6A Gate-Body Leakage IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS - - -1 μA VDS= -24V,VGS=0 Drain-Source On-Resistance 2 RDS(ON) - - 45 - - 82 Total Gate Charge Qg - 6.4 - Gate-Source Charge Qgs - 2.7 - Qgd - 3.1 - Td(on) - 9 - Tr - 16.6 - Td(off) - 21 - Tf - 21.6 - Input Capacitance Ciss - 645 - Output Capacitance Coss - 272 - Reverse Transfer Capacitance Crss - 105 - Gate-Drain (“Miller”) Charge Turn-On Delay Time 2 Rise Time Turn-Off Delay Time Fall Time mΩ VGS= -10V, ID = -5A VGS= -4.5V, ID = -4A nC ID= -6A VDS= -20V VGS= -4.5V nS VDS= -12V ID= -5A VGS= -10V RG= 3.3Ω pF VGS=0V VDS= -25V f=1.0MHz - mJ VDD= -25V, L=0.1mH, IAS= -10A Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 30 - Source-Drain Diode Forward On Voltage 2 Continuous Source Current 1.6 Pulsed Source Current 2.6 VDS - -0.84 -1.2 V IS= -1.7A, VGS=0V IS - - -6 nS ISM - - -12 nC VG= VD=0V Force Current Notes: 1. surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 135℃/W when mounted on Min. copper pad. 2. The data tested by pulsed , pulse width≦300us , duty cycle≦2% 3. The EAS data shows Max. rating . The test condition is VDD= -25V,VGS= -10V,L=0.1mH,IAS= -19A 4. The power dissipation is limited by 150℃ junction temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 21-Jul-2014 Rev. F Any changes of specification will not be informed individually. Page 2 of 4 SSG4953 Elektronische Bauelemente -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2014 Rev. F Any changes of specification will not be informed individually. Page 3 of 4 SSG4953 Elektronische Bauelemente -6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Jul-2014 Rev. F Any changes of specification will not be informed individually. Page 4 of 4