SGE2329S -1.5A, -100V, RDS(ON) 650mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SGE2329S uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device. The through-hole version is available for low-profile applications and suited for low voltage applications such as DC/DC converters. TO-220 B N M High Density Cell Design for Ultra Low On-Resistance High power and Current handling capability Excellent CdV/dt effect decline 100% EAS and 100% Rg Guaranteed Green Device Available PACKAGE CODE D J L K L A B C D E F G H 2329S G H REF. D = Marking A O P FEATURES D E Millimeter Min. Max. 14.22 16.51 9.65 10.67 12.50 14.75 3.56 4.90 0.51 1.45 2.03 2.92 0.31 0.76 3.5 4.5 C G F REF. J K L M N O P Millimeter Min. Max. 0.7 1.78 0.38 1.02 2.39 2.69 2.50 3.43 3.10 4.09 8.38 9.65 0.89 1.47 S P-Channel D2 G1 S3 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 V -1.5 A -1.2 A IDM -5.5 A PD 2 W TJ, TSTG -55 ~ +150 °C 62.5 °C/W Continuous Drain Current, VGS@10V TA=25°C 1 ID TA=70°C Pulsed Drain Current 2 Total Power Dissipation 3 TA=25°C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 23-Sep-2014 Rev. A 1 Max. RθJA Any changes of specification will not be informed individually. Page 1 of 4 SGE2329S -1.5A, -100V, RDS(ON) 650mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ= 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -100 - - V VGS=0, ID= -250uA Gate Threshold Voltage VGS(th) -1 - -2.5 V VDS=VGS, ID= -250uA gfs - 3 - S VDS= -5V, ID= -1A IGSS - - ±100 nA VGS= ±20V - - -1 µA - - -5 µA - - 650 - - 700 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current TJ=25℃ IDSS TJ=55℃ Static Drain-Source On-Resistance 2 RDS(ON) Total Gate Charge Qg - 9.3 - Gate-Source Charge Qgs - 1.75 - Gate-Drain (“Miller”) Change Qgd - 1.25 - Td(on) - 2 - Tr - 18.4 - Td(off) - 19.6 - Tf - 19.6 - Input Capacitance Ciss - 513 - Output Capacitance Coss - 29 - Reverse Transfer Capacitance Crss - 17 - Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time mΩ Test condition VDS= -80V, VGS=0 VGS= -10V, ID= -1A VGS= -4.5V, ID= -0.5A nC ID= -1A VDS= -50V VGS= -10V ns VDD= -50V ID= -0.5A VGS= -10V RG=3.3Ω RL=30Ω pF VGS=0V VDS= -15V f=1.0MHz IS= -1A, VGS=0V, Tj=25°C Source-Drain Diode Forward On Voltage 2 VSD - - -1.2 V IS - - -1.5 A ISM - - -5 V Reverse Recovery Time Trr - 27 - nS Reverse Recovery Charge Qrr - 36 - nC Continuous Source Current Pulsed Source Current 2,4 1,4 VD= VG=0V, Force Current IF= -1A, Tj=25°C dI/dt=100A/µs Notes: 2 1. The data tested by surface mounted on a inch FR-4 board with 2OZ copper. 2. The data tested by pulse width≦300us, duty cycle≦2%. 3. The power dissipation is limited by 150°C jun ction temperature. 4. The data is theoretically the same as ID and IDM, In real applications, should by limited by total power dissipation. http://www.SeCoSGmbH.com/ 23-Sep-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SGE2329S Elektronische Bauelemente -1.5A, -100V, RDS(ON) 650mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 23-Sep-2014 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SGE2329S Elektronische Bauelemente -1.5A, -100V, RDS(ON) 650mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 23-Sep-2014 Rev. A Any changes of specification will not be informed individually. Page 4 of 4