SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The SMG2328 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2328 is universally used for all commercial-industrial applications. A L 3 3 C B Top View FEATURES 1 1 2 K Simple drive requirement Small package outline Super high density cell design for extremely low RDS(ON) E 2 D F G REF. A B C D E F DEVICE MARKING: D Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 2328 G S PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7’ inch MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDSS 100 V Gate – Source Voltage VGSS ±20 V TA=25°C ID 1.5 A TA=70°C Continuous Drain Current 3 ID 1.2 A 1.2 IDM 5 A Total Power Dissipation PD 1.38 W 0.008 W / °C -55~150 °C 125 °C / W Pulsed Drain Current Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG THERMAL DATA 3 Thermal Resistance Junction-ambient (Max.) http://www.SeCoSGmbH.com/ 21-Nov-2013 Rev. B RθJA Any changes of specification will not be informed individually. Page 1 of 4 SMG2328 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0V, ID =250μA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS= VGS, ID =250μA gfs - 4 - S VDS=15V, ID =1.5A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current(TJ=25°C) Drain-Source Leakage Current(TJ=55°C) - - 1 μA VDS=80V, VGS=0V IDSS - - 10 μA VDS=80V, VGS=0V RDS(ON) - - 250 mΩ VGS=10V, ID=1.5A Qg - 11.1 - Gate-Source Chagre Qgs - 4.4 - nC VDS=80V, ID =1.5A, VGS=5V Gate-Drain (“Miller”) Change Qgd - 3 - Td(ON) - 9 - Tr - 9.4 - Td(OFF) - 26.8 - nS VDD=30V, VGS=10V I D=1A, RL=30Ω, RG=6Ω Tf - 2.6 - Input Capacitance CISS - 975 - Output Capacitance COSS - 38 - pF Reverse Transfer Capacitance CRSS - 27 - VDS=25V VGS=0V f=1MHz V IS=1.0A, VGS=0V Forward Tranconductance Drain-Source On-State Resistance Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time TEST CONDITION SOURCE-DRAIN DIODE Forward On Voltage 2 VSD - - 1.2 Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 3. Surface mounted on 1 in copper pad of FR4 board；270 °C / W when mounted on Min. copper pad. http://www.SeCoSGmbH.com/ 21-Nov-2013 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2328 Elektronische Bauelemente 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Nov-2013 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2328 Elektronische Bauelemente 100V, 1.5A, 250mΩ N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 21-Nov-2013 Rev. B Any changes of specification will not be informed individually. Page 4 of 4