SMG2310B 2.3A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SC-59 The SMG2310B utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310B is universally used for all commercial-industrial applications. A L 3 3 C B Top View 1 1 2 K E 2 D FEATURES Simple Drive Requirement Small Package Outline F REF. A B C D E F MARKING 2310B PACKAGE INFORMATION Package MPQ SC-59 3K G H Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW Leader Size 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 , VGS@10V TA=25°C TA=70°C Pulsed Drain Current 2 Power Dissipation 3 TA=25°C Operating Junction and Storage Temperature Range ID 2.3 1.8 A IDM 9.2 A PD 1 W Tj, Tstg -55~150 °C 125 °C / W Thermal Resistance Rating Maximum Junction to Ambient 1 http://www.SeCoSGmbH.com/ 30-Jul-2013 Rev. B RθJA Any changes of specification will not be informed individually. Page 1 of 4 SMG2310B 2.3A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage 60 - - V - 0.054 - V/°C VGS(th) 1 - 2.5 V VDS=VGS, ID=250μA Forward Transconductance gfs - 13 - S VDS =5V, ID =2A Gate-Body Leakage Current IGSS - - ±100 nA VGS=±20V - - 1 - - 5 - - 100 - - 110 Qg - 5 - Gate-Source Charge Qgs - 1.68 - Gate-Drain (‘’Miller’’)Charge Qgd - 1.9 - Td(on) - 1.6 - Tr - 7.2 - Td(off) - 25 - Tf - 14.4 - Ciss - 511 - Breakdown Voltage Temperature Gate-Threshold Voltage TJ=25°C Drain-Source Leakage Current TJ=55°C Drain-Source On-Resistance Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance BVDSS △BVDSS/△Tj IDSS RDS(ON) Output Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 25 - μA mΩ VGS=0, ID=250μA Reference to 25°C, ID=1mA VDS=48V, VGS=0 VDS=48V, VGS=0 VGS=10V, ID=2.3A VGS=4.5V, ID=2.2A nC VDS=48V, VGS=4.5V, ID=2A nS VDS=30V, VGS=10V, RG=3.3Ω, RD=30Ω, ID=2A pF VGS=0, VDS=15V, f=1.0MHz V IS=1A, VGS=0 A VG=VD=0, Force Current IF=2A, dI/dt=100A/μs VGS=0 Source-Drain Diode 2 Diode Forward Voltage VSD - - 1.2 IS - - 2.3 Pulsed Source Current ISM - - 9.2 Reverse Recovery Time TRR - 9.7 - nS Reverse Recovery Charge QRR - 5.8 - nC 1.4 Continuous Source Current 2.4 Notes: 1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C / W when mounted on min. copper pad. 2. The data tested by pulsed , pulse width≦300μs, duty cycle≦2% 3. The power dissipation is limited by 150 °C junction temperature 4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation http://www.SeCoSGmbH.com/ 30-Jul-2013 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2310B Elektronische Bauelemente 2.3A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 30-Jul-2013 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2310B Elektronische Bauelemente 2.3A , 60V , RDS(ON) 100 m N-Channel Enhancement Mode MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 30-Jul-2013 Rev. B Any changes of specification will not be informed individually. Page 4 of 4