SMG2310B

SMG2310B
2.3A , 60V , RDS(ON) 100 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
The SMG2310B utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG2310B is universally used for all commercial-industrial
applications.
A
L
3
3
C B
Top View
1
1
2
K
E
2
D
FEATURES


Simple Drive Requirement
Small Package Outline
F
REF.
A
B
C
D
E
F
MARKING
2310B
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
G
H
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current 1 , VGS@10V
TA=25°C
TA=70°C
Pulsed Drain Current 2
Power Dissipation
3
TA=25°C
Operating Junction and Storage Temperature Range
ID
2.3
1.8
A
IDM
9.2
A
PD
1
W
Tj, Tstg
-55~150
°C
125
°C / W
Thermal Resistance Rating
Maximum Junction to Ambient 1
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2310B
2.3A , 60V , RDS(ON) 100 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
60
-
-
V
-
0.054
-
V/°C
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250μA
Forward Transconductance
gfs
-
13
-
S
VDS =5V, ID =2A
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
-
-
1
-
-
5
-
-
100
-
-
110
Qg
-
5
-
Gate-Source Charge
Qgs
-
1.68
-
Gate-Drain (‘’Miller’’)Charge
Qgd
-
1.9
-
Td(on)
-
1.6
-
Tr
-
7.2
-
Td(off)
-
25
-
Tf
-
14.4
-
Ciss
-
511
-
Breakdown Voltage Temperature
Gate-Threshold Voltage
TJ=25°C
Drain-Source Leakage
Current
TJ=55°C
Drain-Source On-Resistance
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
BVDSS
△BVDSS/△Tj
IDSS
RDS(ON)
Output Capacitance
Coss
-
38
-
Reverse Transfer Capacitance
Crss
-
25
-
μA
mΩ
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS=48V, VGS=0
VDS=48V, VGS=0
VGS=10V, ID=2.3A
VGS=4.5V, ID=2.2A
nC
VDS=48V,
VGS=4.5V,
ID=2A
nS
VDS=30V,
VGS=10V,
RG=3.3Ω,
RD=30Ω,
ID=2A
pF
VGS=0,
VDS=15V,
f=1.0MHz
V
IS=1A, VGS=0
A
VG=VD=0, Force Current
IF=2A, dI/dt=100A/μs
VGS=0
Source-Drain Diode
2
Diode Forward Voltage
VSD
-
-
1.2
IS
-
-
2.3
Pulsed Source Current
ISM
-
-
9.2
Reverse Recovery Time
TRR
-
9.7
-
nS
Reverse Recovery Charge
QRR
-
5.8
-
nC
1.4
Continuous Source Current
2.4
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C / W when mounted on min. copper pad.
2. The data tested by pulsed , pulse width≦300μs, duty cycle≦2%
3. The power dissipation is limited by 150 °C junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2310B
Elektronische Bauelemente
2.3A , 60V , RDS(ON) 100 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2310B
Elektronische Bauelemente
2.3A , 60V , RDS(ON) 100 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
30-Jul-2013 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4