SDT1216 -16A , -12V , RDS(ON) 21 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN2*2-6J The SDT1216 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DFN2*2-6J package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic REF. MARKING A B C D E F G 1216 PACKAGE INFORMATION Package MPQ Leader Size DFN2*2-6L 3K 7 inch Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66 0.65 TYP. 0.20 0.40 0.80 1.00 0.174 0.326 REF. H I J K L M Millimeter Min. Max. 0.20 0.85 1.05 0.70 0.90 0.20 0.40 0.203REF 0.00 0.05 Top View ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 V ID -16 A IDM -65 A Continuous Drain Current (t≤10s) Pulsed Drain Current 1 Power Dissipation@ TA = 25°C 2 2.5 Maximum Power Dissipation @TC= 25°C Thermal Resistance Junction-Ambient Operating Junction & Storage Temperature 28-Jul-2014 Rev.A W 18 4 Thermal Resistance from Junction to Case http://www.SeCoSGmbH.com/ PD 3 4 RθJA 50 °C / W RθJC 6.9 °C / W TJ, TSTG 150, -55~150 °C Any changes of specification will not be informed individually. Page 1 of 3 SDT1216 -16A , -12V , RDS(ON) 21 mΩ Ω P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -12 - - V VGS=0, ID= -250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±8V, VDS=0 Drain-Source Leakage Current IDSS - - -1 µA VDS= -12V, VGS=0 VGS(th) -0.4 -0.7 -1 V VDS=VGS, ID= -250µA gfs - 40 - S VDS= -10V, ID= -6.7A - - 21 Gate-Threshold Voltage 5 Forward Transconductance 5 Static Drain-Source On-Resistance 5 RDS(ON) - - Switching Parameters Total Gate Charge VDS= -4.5V, ID=-6.7A mΩ VGS= -2.5V, ID= -6.2A 27 6 - 60 - - 35 - ID= -10A VDS= -6V VGS= -8V Qg Gate-Source Charge Qgs - 5 - Gate-Drain Change Qgd - 10 - Input Capacitance Ciss - 2700 - Output Capacitance Coss - 680 - Reverse Transfer Capacitance Crss - 590 - nC ID= -10A VDS= -6V VGS= -4.5V pF VGS =0 VDS= -10V f =1.0MHz Drain-Source Diode Characteristics Diode Forward Current Diode Forward Voltage Note: 1. 2. 3. 4. 5. 6. 5 4 IS - - -16 A VSD - - -1.2 V IS= -8A, VGS=0 Repetitive Rating: Pulse width limited by maximum junction temperature. This test is performed with no heat sink at Ta=25℃. This test is performed with infinite heat sink at Tc=25℃. Surface mounted on FR4 board, t≤10S. Pulse Test: Pulse With ≤300µs,Duty Cycle≤2%. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 28-Jul-2014 Rev.A Any changes of specification will not be informed individually. Page 2 of 3 SDT1216 Elektronische Bauelemente -16A , -12V , RDS(ON) 21 mΩ Ω P-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 28-Jul-2014 Rev.A Any changes of specification will not be informed individually. Page 3 of 3