SDT1216

SDT1216
-16A , -12V , RDS(ON) 21 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
DFN2*2-6J
The SDT1216 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The DFN2*2-6J package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
REF.
MARKING
A
B
C
D
E
F
G
1216
PACKAGE INFORMATION
Package
MPQ
Leader Size
DFN2*2-6L
3K
7 inch
Millimeter
Min.
Max.
1.924
2.076
1.924
2.076
0.46
0.66
0.65 TYP.
0.20
0.40
0.80
1.00
0.174
0.326
REF.
H
I
J
K
L
M
Millimeter
Min.
Max.
0.20
0.85
1.05
0.70
0.90
0.20
0.40
0.203REF
0.00
0.05
Top View
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
-12
V
Gate-Source Voltage
VGS
±8
V
ID
-16
A
IDM
-65
A
Continuous Drain Current (t≤10s)
Pulsed Drain Current
1
Power Dissipation@ TA = 25°C
2
2.5
Maximum Power Dissipation @TC= 25°C
Thermal Resistance Junction-Ambient
Operating Junction & Storage Temperature
28-Jul-2014 Rev.A
W
18
4
Thermal Resistance from Junction to Case
http://www.SeCoSGmbH.com/
PD
3
4
RθJA
50
°C / W
RθJC
6.9
°C / W
TJ, TSTG
150, -55~150
°C
Any changes of specification will not be informed individually.
Page 1 of 3
SDT1216
-16A , -12V , RDS(ON) 21 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
-12
-
-
V
VGS=0, ID= -250µA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±8V, VDS=0
Drain-Source Leakage Current
IDSS
-
-
-1
µA
VDS= -12V, VGS=0
VGS(th)
-0.4
-0.7
-1
V
VDS=VGS, ID= -250µA
gfs
-
40
-
S
VDS= -10V, ID= -6.7A
-
-
21
Gate-Threshold Voltage
5
Forward Transconductance
5
Static Drain-Source On-Resistance
5
RDS(ON)
-
-
Switching Parameters
Total Gate Charge
VDS= -4.5V, ID=-6.7A
mΩ
VGS= -2.5V, ID= -6.2A
27
6
-
60
-
-
35
-
ID= -10A
VDS= -6V
VGS= -8V
Qg
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Change
Qgd
-
10
-
Input Capacitance
Ciss
-
2700
-
Output Capacitance
Coss
-
680
-
Reverse Transfer Capacitance
Crss
-
590
-
nC
ID= -10A
VDS= -6V
VGS= -4.5V
pF
VGS =0
VDS= -10V
f =1.0MHz
Drain-Source Diode Characteristics
Diode Forward Current
Diode Forward Voltage
Note:
1.
2.
3.
4.
5.
6.
5
4
IS
-
-
-16
A
VSD
-
-
-1.2
V
IS= -8A, VGS=0
Repetitive Rating: Pulse width limited by maximum junction temperature.
This test is performed with no heat sink at Ta=25℃.
This test is performed with infinite heat sink at Tc=25℃.
Surface mounted on FR4 board, t≤10S.
Pulse Test: Pulse With ≤300µs,Duty Cycle≤2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
28-Jul-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 3
SDT1216
Elektronische Bauelemente
-16A , -12V , RDS(ON) 21 mΩ
Ω
P-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
28-Jul-2014 Rev.A
Any changes of specification will not be informed individually.
Page 3 of 3