SGM0410 3.5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The SGM0410 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-89 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A Top View K 1 L 2 3 D F Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic G REF. A B C D E F MARKING 0410 4 E FEATURES CB H Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 J Millimeter Min. Max. 0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. REF. G H J K L = Date code D 24 PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch 1 G 3 S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V 3.5 A 2.2 A IDM 10 A PD 2 W 0.016 W / °C -55~150 °C 62.5 °C / W 3 VGS=5V, TA=25°C ID Continuous DrainCurrent @ VGS=5V, TA=70°C Pulsed Drain Current 1,2 Power Dissipation TA=25°C Linear Derating Factor Operating Junction & Storage Temperature TJ, TSTG Thermal Resistance Rating 3 Thermal Resistance Junction-Ambient (Max). http://www.SeCoSGmbH.com/ 3-Nov-2011 Rev. A RθJA Any changes of specification will not be informed individually. Page 1 of 4 SGM0410 3.5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID=1mA Gate Threshold Voltage VGS(th) 1 - 2.5 V VDS=10V, ID=1mA Forward Transconductance gfs - 4 - S VDS=10V, ID=2.5A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±20V Drain-Source Leakage Current IDSS - - 10 µA VDS=100V, VGS=0 - - 170 Static Drain-Source On-Resistance RDS(ON) - - 200 Qg - 11.2 - Gate-Source Charge Qgs - 4.4 - Gate-Drain (“Miller”) Charge Qgd - 3 - Td(on) - 9 - Tr - 9.4 - Td(off) - 26.8 - Tf - 2.6 - Input Capacitance Ciss - 975 - Output Capacitance Coss - 38 - Reverse Transfer Capacitance Crss - 27 - Total Gate Charge 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time VGS=10V, ID=2.6A mΩ VGS=5V, ID=1.7A nC ID=3.5A VDS=80V VGS=5V nS VDD=30V ID=1A VGS=10V RG=6Ω RD=30Ω pF VGS=0 VDS=25V f=1.0 MHz Source-Drain Diode Forward On Voltage 2 VSD - - 1.5 V IS=3.5A, VGS=0 Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse test. 3. Surface mounted on 1 in2 copper pad of FR4 board;135°C /w when mounted on Mi n. copper pad. http://www.SeCoSGmbH.com/ 3-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SGM0410 Elektronische Bauelemente 3.5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 3-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SGM0410 Elektronische Bauelemente 3.5A , 100V , RDS(ON) 170 mΩ Ω N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 3-Nov-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4