SECOS SGM0410

SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-89
The SGM0410 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
A
Top View
K
1
L
2
3
D
F
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
G
REF.
A
B
C
D
E
F
MARKING
0410
4
E
FEATURES
CB
H
Millimeter
Min.
Max.
4.40
4.60
4.05
4.25
2.40
2.60
1.40
1.60
3.00 REF.
0.40
0.52
J
Millimeter
Min.
Max.
0.89
1.20
0.35
0.41
0.70
0.80
1.50 REF.
REF.
G
H
J
K
L
= Date code
D
24
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-89
1K
7 inch
1
G
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
3.5
A
2.2
A
IDM
10
A
PD
2
W
0.016
W / °C
-55~150
°C
62.5
°C / W
3
VGS=5V, TA=25°C
ID
Continuous DrainCurrent @
VGS=5V, TA=70°C
Pulsed Drain Current
1,2
Power Dissipation
TA=25°C
Linear Derating Factor
Operating Junction & Storage Temperature
TJ, TSTG
Thermal Resistance Rating
3
Thermal Resistance Junction-Ambient (Max).
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
RθJA
Any changes of specification will not be informed individually.
Page 1 of 4
SGM0410
3.5A , 100V , RDS(ON) 170 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Min. Typ.
Max.
Unit
Teat Conditions
Drain-Source Breakdown Voltage
BVDSS
100
-
-
V
VGS=0, ID=1mA
Gate Threshold Voltage
VGS(th)
1
-
2.5
V
VDS=10V, ID=1mA
Forward Transconductance
gfs
-
4
-
S
VDS=10V, ID=2.5A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
Drain-Source Leakage Current
IDSS
-
-
10
µA
VDS=100V, VGS=0
-
-
170
Static Drain-Source On-Resistance
RDS(ON)
-
-
200
Qg
-
11.2
-
Gate-Source Charge
Qgs
-
4.4
-
Gate-Drain (“Miller”) Charge
Qgd
-
3
-
Td(on)
-
9
-
Tr
-
9.4
-
Td(off)
-
26.8
-
Tf
-
2.6
-
Input Capacitance
Ciss
-
975
-
Output Capacitance
Coss
-
38
-
Reverse Transfer Capacitance
Crss
-
27
-
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
VGS=10V, ID=2.6A
mΩ
VGS=5V, ID=1.7A
nC
ID=3.5A
VDS=80V
VGS=5V
nS
VDD=30V
ID=1A
VGS=10V
RG=6Ω
RD=30Ω
pF
VGS=0
VDS=25V
f=1.0 MHz
Source-Drain Diode
Forward On Voltage
2
VSD
-
-
1.5
V
IS=3.5A, VGS=0
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse test.
3. Surface mounted on 1 in2 copper pad of FR4 board;135°C /w when mounted on Mi n. copper pad.
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SGM0410
Elektronische Bauelemente
3.5A , 100V , RDS(ON) 170 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SGM0410
Elektronische Bauelemente
3.5A , 100V , RDS(ON) 170 mΩ
Ω
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
3-Nov-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4