2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B C D E F REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Symbol Ratings Tj +150 Unit Tstg -55 ~ +150 Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 80 V Emitter to Base Voltage VEBO 5.0 V IC 1 A Collector Current ICP (Single pulse Pw=20ms) 2 A PD 500 mW Total Power Dissipation Characteristics Symbol at Ta = 25 Min. Typ. Max. Unit BVCBO 100 - - V IC=50uA Test Conditions BVCEO 80 - - V IC=1mA BVEBO 5 - - V IE=50uA ICBO - - 1 uA VCB=80V IEBO - - 1 uA VEB=4V VCE(sat) - - 400 mV hFE 82 - 390 fT Cob 100 - MHZ - 25 - pF IC=500mA, IB=20mA VCE=3V, IC=500mA VCE=10V,IC=50mA,f=100MHZ VCB=10V,IE=0, f=1MHz Classification Of hFE Rank P Q R hFE 82-180 120-270 180-390 Marking Code : DF http://www.SeCoSGmbH.com 08-May-2007 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 08-May-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2