PZT6718 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT6718 is designed for general purpose medium power amplifier and switching. REF. 6 7 18 Date Code B ABSOLUTE MAXIMUM RATINGS A C D E I H C E Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Ta=25 C Symbol Value Units VCBO Collector-Base Voltage 100 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage 100 V V A IC Parameter 5 Collector Current PD TJ,Tstg 1 Total Power Dissipation 1.5 Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Cutoff Current Symbol BVCBO BVCEO BVEBO I CBO Collector Saturation Voltage *VCE(sat) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Min 100 100 5 - *hFE1 80 *hFE2 *hFE3 100 fT Cob 50 - 20 Typ. - Max - Unit V V V 100 350 nA Test Conditions I C= 100µA I C= 1mA I E= 10µA VCB= 80V mV I C=350mA,IB=35mA - VCE= 1 V, I C=50 mA VCE= 1 V, I C=250mA 310 20 MH z pF VCE= 1 V, I C=500mA VCE= 10 V, IC= 50mA,f=100MHz VCB=10V , f=1MHz *Pulse width≦380µs, Duty Cycle≦2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT6718 Elektronische Bauelemente NPN Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2