PZT3906 PNP Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT3906 is designed for general purpose switching and amplifier applications. REF. Date Code 3 9 0 6 B C A C D E I H E ABSOLUTE MAXIMUM RATINGS VCEO VEBO IC PD TJ,Tstg REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 o Tamb =25 C, unless otherwise specified Symbol VCBO Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0 10 0.60 0.80 0.25 0.35 Parameter Value Units Collector-Base Voltage -40 V Collector-Emitter Voltage Emitter-Base Voltage -40 -5 V V Collector Current -200 mA Total Power Dissipation 1.5 Junction and Storage Temperature -55~+150 W C O o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector Saturation Voltage Base Saturation Voltage DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol BVCBO *BVCEO BVEBO I CES I EBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Cob Min -40 -40 -5 -0.65 60 80 100 60 30 250 - Typ. -0.2 -0.84 - Max - Unit V V V -50 -50 nA nA -0.25 -0.4 -0.85 -0.95 300 4.5 V V V Test Conditions I C=-10 µA I C=-1mA I E=-10µA VCB=-30V VEB=- 3V I C=-10mA,IB=-1mA I C=-50mA,IB=-5mA I C=-10mA,IB=-1mA I C=-50mA,IB=-5mA VCE=- 1 V, I C=-0.1mA VCE=- 1 V, I C=-1mA VCE=- 1 V, I C=- 10mA VCE=- 1 V, I C=- 50mA VCE=- 1 V, I C=-100mA MH z pF VCE=- 20 V, IC=-10 mA,, f=100MHz VCB=-5V , f=1MHz *Pulse test: Pulse width≦300µs, Duty Cycle≦2% http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 PZT3906 Elektronische Bauelemente PNP Transistor Epitaxial Planar Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2