2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product Feature · SOT-323 Complements the 2SC4081F A COLLECTOR L 3 3 B S Top View 1 1 2 BASE V G 3 2 EMITTER C 1 Marking Code: 5AX 2 H D J K X = hFE Rank Code Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm Absolute Maximum Ratings at Ta = 25к Parameter Symbol Ratings Unit Junction Temperature Tj +150 ć Storage Temperature Tstg -55~+150 ć Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -6 V Collector Current IC -150 mA Total Power Dissipation PD 225 mW Characteristics at Ta = 25к Parameter Symbol Min Typ. Max Unit Test Conditions Collector -Base Breakdown Voltage BVCBO -60 - - V IC=-50uA Collector -Emitter Breakdown Voltage BVCEO -50 - - V IC=-1mA Emitter -Base Breakdown Voltage BVEBO -6 - - V IE=-50uA Collector -Emitter Breakdown Voltage ICBO - - -100 nA VCB=-60V Emitter -Base Cutoff Current IEBO - - -100 nA VEB=-6V Collector Saturation Voltage 1 VCE(sat) - - -500 mV IC=-50mA, IB=-5mA DC Current Gain hFE 120 - 560 - VCE=-6V, IC=-1mA Gain-Bandwidth Product fT - 140 - MHz Output Capacitance Cob - 4.0 5.0 pF VCE=-12V, IE=-2 mA, f=100MHz VCB=-12V, f=1MHz, IE=0 *Pulse Test: Pulse Width = 380us, Duty Cycle = 2% Classification of hFE Rank Q Range 120 - 270 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A R 180 - 390 S 270 - 560 Any changing of specification will not be informed individual Page 1 of 3 2SA1576F PNP Silicon Elektronische Bauelemente General Purpose Transistor Characteristics Curve http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SA1576F PNP Silicon Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A General Purpose Transistor Any changing of specification will not be informed individual Page 3 of 3