TPT5609 TPT5609 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 µA Emitter cut-off current IEBO VEB=5V, IC=0 1 µA DC current gain hFE VCE=2V, IC=500mA VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500mA 1 V Transition frequency fT VCE=2V, IC=500mA 190 MHz Cob VCB=10V, IE=0, f=1MHz 22 pF Collector-emitter saturation voltage Collector output capacitance 60 240 CLASSIFICATION OF hFE Rank Range A B C 60-120 85-170 120-240 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]