RoHS KTA1266 KTA1266 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.15 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Emitter cut-off current DC current gain E Collector-emitter saturation voltage J E Base-emitter saturation voltage conditions MIN TYP MAX Ic=-100µA, IE=0 -50 V Ic=-1mA, IB=0 -50 V IE=-100µA, IC=0 -5 V VCB=-50V, IE=0 -0.1 µA IEBO VEB=-5V, IC=0 -0.1 µA hFE(1) VCE=-6V, IC=-2mA 70 hFE(2) VCE=-6V, IC=-150mA 25 VCE(sat) IC=-100mA, IB=-10mA -0.3 V VBE(sat) IC=-100mA, IB=-10mA -1.1 V fT VCE=-10V, IC=-1mA Cob VCB=-10V, IE=0, f=1MHz Collector output capacitance Noise figure NF 400 80 MHz VCE=-6V, Ic=-0.1mA, f=1KHZ, Rg=10KΩ 7 pF 10 dB CLASSIFICATION OF hFE(1) Rank Range O Y GR 70-140 120-240 200-400 Marking WEJ ELECTRONIC CO. UNIT ICBO Transition frequency W O Test R T C E L Collector cut-off current N 1 2 3 unless otherwise specified) Symbol Collector-base breakdown voltage C O Http:// www.wej.cn E-mail:[email protected]