Data Sheet

HGTG30N60C3D
Data Sheet
January 2009
File Number
4041.2
63A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diodes
Features
The HGTG30N60C3D is a MOS gated high voltage
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
TA49053.
• Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC
• 63A, 600V at TC = 25oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction
losses are essential.
E
C
G
Formerly Developmental Type TA49014.
Ordering Information
PART NUMBER
HGTG30N60C3D
PACKAGE
TO-247
BRAND
G30N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG30N60C3D
UNITS
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
63
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
30
A
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
25
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
252
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TJ = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
60A at 600V
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
208
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.67
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
-40 to 150
oC
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
260
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
4
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
15
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
ICES
VCE(SAT)
VCE = BVCES
TC = 25oC
-
-
250
µA
VCE = BVCES
TC = 150oC
-
-
3.0
mA
IC = IC110,
VGE = 15V
TC = 25oC
-
1.5
1.8
V
TC = 150oC
-
1.7
2.0
V
TC = 25oC
3.0
5.2
6.0
V
-
-
±100
nA
VCE(PK) = 480V
200
-
-
A
VCE(PK) = 600V
60
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
8.1
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
162
180
nC
VGE = 20V
-
216
250
nC
-
40
-
ns
-
45
-
ns
-
320
400
ns
-
230
275
ns
VGE(TH)
IC = 250µA,
VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC,
VGE = 15V,
RG = 3Ω,
L = 100µH
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 3Ω,
L = 100µH
Current Fall Time
tfI
Turn-On Energy
EON
-
1050
-
µJ
Turn-Off Energy (Note 3)
EOFF
-
2500
-
µJ
Diode Forward Voltage
VEC
-
1.75
2.2
V
©2009 Fairchild Semiconductor Corporation
IEC = 30A
HGTG30N60C3D Rev. B
HGTG30N60C3D
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
Diode Reverse Recovery Time
trr
Thermal Resistance
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IEC = 30A, dIEC/dt = 100A/µs
-
52
60
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
42
50
ns
IGBT
-
-
0.6
oC/W
Diode
-
-
1.3
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
125
100
TC = 150oC
75
TC = 25oC
50
TC = -40oC
25
0
4
6
8
10
VGE, GATE TO EMITTER VOLTAGE (V)
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
150
VGE = 15.0V
125
9.5V
100
9.0V
75
8.5V
50
7.0V
7.5V
0
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
125
100
TC = 25oC
75
TC = 150oC
50
25
0
5
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2009 Fairchild Semiconductor Corporation
4
6
8
10
FIGURE 2. SATURATION CHARACTERISTICS
TC = -40oC
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
150
0
8.0V
25
FIGURE 1. TRANSFER CHARACTERISTICS
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
10.0V
12.0V
150
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
VGE = 15V
125
100
TC = 150oC
TC = -40oC
TC = 25oC
75
50
25
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG30N60C3D Rev. B
HGTG30N60C3D
(Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
ICE , DC COLLECTOR CURRENT (A)
70
VGE = 15V
60
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
150
25
450
20
250
10
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
VGE = 10V
50
40
VGE = 15V
20
20
30
40
50
200
tSC
150
5
10
100
11
15
14
VGE , GATE TO EMITTER VOLTAGE (V)
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
400
VGE = 10V
200
100
10
60
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
VGE = 15V
300
ICE , COLLECTOR TO EMITTER CURRENT (A)
500
13
12
500
100
10
10
300
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
30
400
ISC
350
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
200
500
VCE = 360V, RG = 25Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT (A)
Typical Performance Curves
50
20
30
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
60
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
VGE = 10V
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
400
100
VGE = 15V
10
10
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2009 Fairchild Semiconductor Corporation
60
300
VGE = 10V
200
VGE = 15V
100
10
20
30
40
50
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG30N60C3D Rev. B
HGTG30N60C3D
6.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
8.0
(Continued)
7.0
6.0
5.0
VGE = 10V
4.0
3.0
2.0
1.0
VGE = 15V
0
10
20
30
40
50
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
5.0
4.0
VGE = 10V or 15V
3.0
2.0
1.0
0
10
60
ICE , COLLECTOR TO EMITTER CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
500
TJ = 150oC, TC = 75oC
RG = 3Ω, L = 100µH
100
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
10
VGE = 10V
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
1
5
10
20
30
40
ICE, COLLECTOR TO EMITTER CURRENT (A)
C, CAPACITANCE (pF)
CIES
6000
5000
4000
3000
2000
COES
1000
CRES
0
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2009 Fairchild Semiconductor Corporation
200
150
LIMITED BY
CIRCUIT
100
50
0
0
100
200
300
400
500
600
25
FIGURE 14. SWITCHING SAFE OPERATING AREA
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 400kHz
5
TJ = 150oC, VGE = 15V, L = 100µH
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
8000
0
250
60
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
7000
60
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC
600
15
12
480
VCE = 600V
9
360
VCE = 400V
240
6
VCE = 200V
3
120
0
0
40
80
120
QG, GATE CHARGE (nC)
160
VGE , GATE TO EMITTER VOLTAGE (V)
Typical Performance Curves
0
200
FIGURE 16. GATE CHARGE WAVEFORMS
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (continued)
Collector Current, Ic [A]
500
10µs
100µs
100
1ms
10ms
10
DC
1
*Notes:
0.1
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
ZθJC , NORMALIZED THERMAL RESPONSE
Figure 17. SOA Characteristics
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , RECTANGULAR PULSE DURATION (s)
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
©2009 Fairchild Semiconductor Corporation
HGTG30N60C3D Rev. B
HGTG30N60C3D
Typical Performance Curves (continued)
200
60
50
tr, RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
TC = 25oC, dIEC/dt = 100A/µs
100oC
10
150oC
1
0
0.5
25oC
trr
40
30
ta
20
tb
10
2.0
1.0
1.5
VEC , FORWARD VOLTAGE (V)
2.5
0
3.0
1
Figure 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
5
10
IEC , FORWARD CURRENT (A)
30
Figure 20. RECOVERY TIME vs FORWARD CURRENT
Test Circuit and Waveforms
L = 100µH
90%
RHRP3060
10%
VGE
EOFF
RG = 3Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
trI
tfI
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT
©2009 Fairchild Semiconductor Corporation
EON
VCE
td(ON)I
Figure 22. SWITCHING TEST WAVEFORMS
HGTG30N60C3D Rev. B
HGTG30N60C3D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
©2009 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 13)
and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
HGTG30N60C3D Rev. B