HARRIS HGTG12N60C3D

HGTG12N60C3D
S E M I C O N D U C T O R
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
January 1997
Features
•
•
•
•
•
Package
o
24A, 600V at TC = 25 C
Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC
Short Circuit Rating
Low Conduction Loss
Hyperfast Anti-Parallel Diode
JEDEC STYLE TO-247
E
C
G
Description
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately
between 25oC and 150oC. The IGBT used is the development
type TA49123. The diode used in antiparallel with the IGBT is
the development type TA49061.
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses
are essential.
C
PACKAGING AVAILABILITY
PART NUMBER
HGTG12N60C3D
PACKAGE
TO-247
G
BRAND
G12N60C3D
NOTE: When ordering, use the entire part number.
E
Formerly Developmental Type TA49117.
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
NOTE:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω.
HGTG12N60C3D
600
UNITS
V
24
12
15
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS:
4,364,073
4,587,713
4,641,162
4,794,432
4,860,080
4,969,027
4,417,385
4,598,461
4,644,637
4,801,986
4,883,767
4,430,792
4,605,948
4,682,195
4,803,533
4,888,627
4,443,931
4,618,872
4,684,413
4,809,045
4,890,143
4,466,176
4,620,211
4,694,313
4,809,047
4,901,127
4,516,143
4,631,564
4,717,679
4,810,665
4,904,609
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1997
3-35
4,532,534
4,639,754
4,743,952
4,823,176
4,933,740
4,567,641
4,639,762
4,783,690
4,837,606
4,963,951
File Number
4043.1
HGTG12N60C3D
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter-Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
ICES
VCE(SAT)
VCE = BVCES
TC = 25oC
-
-
250
µA
VCE = BVCES
TC = 150oC
-
-
2.0
mA
IC = IC110,
VGE = 15V
TC = 25oC
-
1.65
2.0
V
TC = 150oC
-
1.85
2.2
V
TC = 25oC
-
1.80
2.2
V
TC = 150oC
-
2.0
2.4
V
TC = 25oC
3.0
5.0
6.0
V
-
-
±100
nA
VCE(PK) = 480V
80
-
-
A
VCE(PK) = 600V
24
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.6
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
48
55
nC
VGE = 20V
-
62
71
nC
-
14
-
ns
-
16
-
ns
-
270
400
ns
IC = 15A,
VGE = 15V
Gate-Emitter Threshold Voltage
Gate-Emitter Leakage Current
Switching SOA
Gate-Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
VGE(TH)
IC = 250µA,
VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC,
VGE = 15V,
RG = 25Ω,
L = 100µH
VGEP
QG(ON)
tD(ON)I
tRI
tD(OFF)I
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
Current Fall Time
tFI
-
210
275
ns
Turn-On Energy
EON
-
380
-
µJ
Turn-Off Energy (Note 3)
EOFF
-
900
-
µJ
Diode Forward Voltage
VEC
IEC = 12A
-
1.7
2.0
V
IEC = 12A, dIEC/dt = 100A/µs
-
34
42
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
30
37
ns
IGBT
-
-
1.2
oC/W
Diode
-
-
1.5
oC/W
Diode Reverse Recovery Time
Thermal Resistance
trr
RθJC
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and
ending at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1
Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TurnOn losses include diode losses.
3-36
HGTG12N60C3D
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
ICE, COLLECTOR-EMITTER CURRENT (A)
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
70
60
50
TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4
6
8
10
14
12
80
VGE= 15.0V
60
50
10.0V
40
30
9.0V
20
8.5V
8.0V
10
7.0V
0
0
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
70
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0
1
2
3
4
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
70
TC = -40oC
60
TC = 25oC
50
40
TC = 150oC
30
20
10
0
5
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
ICE , DC COLLECTOR CURRENT (A)
VGE = 15V
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
1
2
3
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 3. COLLECTOR-EMITTER ON-STATE VOLTAGE
25
10
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR-EMITTER CURRENT (A)
ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 1. TRANSFER CHARACTERISTICS
7.5V
2
4
6
8
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VGE, GATE-TO-EMITTER VOLTAGE (V)
80
12.0V
70
150
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A
FUNCTION OF CASE TEMPERATURE
20
140
VCE = 360V, RGE = 25Ω, TJ = 125oC
120
ISC
100
15
80
10
60
40
tSC
5
10
11
12
13
14
VGE , GATE-TO-EMITTER VOLTAGE (V)
20
15
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
3-37
ISC, PEAK SHORT CIRCUIT CURRENT(A)
ICE, COLLECTOR-EMITTER CURRENT (A)
Typical Performance Curves
HGTG12N60C3D
Typical Performance Curves
(Continued)
400
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
tD(OFF)I , TURN-OFF DELAY TIME (ns)
tD(ON)I , TURN-ON DELAY TIME (ns)
100
50
VGE = 10V
30
20
VGE = 15V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
300
VGE = 15V
VGE = 10V
200
100
10
5
10
15
20
25
5
30
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
15
20
25
30
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
300
200
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
100
VGE = 10V
tFI , FALL TIME (ns)
tRI , TURN-ON RISE TIME (ns)
10
ICE , COLLECTOR-EMITTER CURRENT (A)
VGE = 15V
10
200
VGE = 10V or 15V
100
90
5
80
5
10
15
20
25
5
30
10
FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
3.0
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
5
10
15
20
25
25
30
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V or 15V
1.0
0.5
0
30
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
20
FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
EOFF , TURN-OFF ENERGY LOSS (mJ)
EON , TURN-ON ENERGY LOSS (mJ)
2.0
15
ICE , COLLECTOR-EMITTER CURRENT (A)
ICE , COLLECTOR-EMITTER CURRENT (A)
5
10
15
20
25
ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
3-38
30
HGTG12N60C3D
100
200
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
100
ICE, COLLECTOR-EMITTER CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
(Continued)
VGE = 10V
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
10
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
o
RθJC = 1.2 C/W
1
5
10
20
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
80
60
LIMITED BY
CIRCUIT
40
20
0
30
0
100
200
FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
C, CAPACITANCE (pF)
VCE , COLLECTOR - EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
CIES
1500
1000
500
COES
0
0
5
10
15
20
25
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
500
600
FIGURE 14. SWITCHING SAFE OPERATING AREA
2500
CRES
400
VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V)
ICE, COLLECTOR-EMITTER CURRENT (A)
2000
300
IG REF = 1.276mA, RL = 50Ω, TC = 25oC
15
600
480
12
VCE = 600V
360
9
240
6
VCE = 400V
VCE = 200V
120
3
0
0
10
20
30
40
QG , GATE CHARGE (nC)
50
60
FIGUE 16. GATE CHARGE WAVEFORMS
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
100
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
3-39
101
0
VGE, GATE-EMITTER VOLTAGE (V)
Typical Performance Curves
HGTG12N60C3D
Typical Performance Curves
(Continued)
50
TC = 25oC, dIEC/dt = 100A/µs
40
30
tR , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
40
100oC
20
150oC
25oC
10
tRR
30
tA
20
tB
10
0
0
0
0.5
1.0
1.5
2.5
2.0
3.0
5
0
VEC , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT AS A FUNCTION OF
FORWARD VOLTAGE DROP
10
15
FIGURE 19. RECOVERY TIMES AS A FUNCTION OF FORWARD
CURRENT
Test Circuit and Waveform
L = 100µH
90%
RHRP1560
10%
VGE
EOFF
RG = 25Ω
EON
VCE
+
-
20
IEC , FORWARD CURRENT (A)
90%
VDD = 480V
ICE
10%
tD(OFF)I
tFI
tRI
tD(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
3-40
HGTG12N60C3D
Operating Frequency Information
Handling Precautions for IGBTs
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be
handled safely if the following basic precautions are taken:
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of
the on-state time for a 50% duty factor. Other definitions are
possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJMAX - TC)/
RθJC. The sum of device switching and conduction losses
must not exceed PD . A 50% duty factor was used (Figure
13) and the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail
losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited
or floating should be avoided. These conditions can result
in turn-on of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended.
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at
any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is
believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
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3-41
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