FAIRCHILD HGTG12N60B3D

HGTG12N60C3D
Data Sheet
December 2001
24A, 600V, UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. The device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49123. The diode used in anti parallel
with the IGBT is the development type TA49061.
Features
• 24A, 600V at TC = 25oC
• Typical Fall Time . . . . . . . . . . . . . . . . 210ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
Packaging
JEDEC STYLE TO-247
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential.
E
C
G
Formerly Developmental Type TA49117.
Ordering Information
PART NUMBER
HGTG12N60C3D
PACKAGE
TO-247
BRAND
G12N60C3D
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGTG12N60C3D Rev. B
HGTG12N60C3D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM
Switching Safe Operating Area at TJ = 150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
HGTG12N60C3D
600
UNITS
V
24
12
15
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
-
Collector to Emitter Leakage Current
ICES
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
1.80
2.2
V
-
2.0
2.4
V
3.0
5.0
6.0
V
-
-
±100
nA
VCE(PK) = 480V
80
-
-
A
VCE(PK) = 600V
24
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.6
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
48
55
nC
VGE = 20V
-
62
71
nC
VCE = BVCES
VCE = BVCES
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = IC110,
VGE = 15V
IC = 15A,
VGE = 15V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
VGE(TH)
IGES
VGE = ±20V
SSOA
TJ = 150oC,
VGE = 15V,
RG = 25Ω,
L = 100µH
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
©2001 Fairchild Semiconductor Corporation
IC = 250µA,
VCE = VGE
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
IEC = 12A
-
14
-
ns
-
16
-
ns
-
270
400
ns
-
210
275
ns
-
380
-
µJ
-
900
-
µJ
-
1.7
2.0
V
HGTG12N60C3D Rev. B
HGTG12N60C3D
Electrical Specifications
TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
Diode Reverse Recovery Time
trr
Thermal Resistance
RθJC
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IEC = 12A, dIEC/dt = 100A/µs
-
34
42
ns
IEC = 1.0A, dIEC/dt = 100A/µs
-
30
37
ns
IGBT
-
-
1.2
oC/W
Diode
-
-
1.5
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse, and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG12N60C3D was tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
80
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
70
60
50
TC = 150oC
40
TC = 25oC
30
TC = -40oC
20
10
0
4
6
8
10
12
14
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC
80
VGE= 15.0V
60
50
10.0V
40
30
9.0V
8.5V
20
8.0V
10
7.0V
0
0
VGE, GATE TO EMITTER VOLTAGE (V)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 10V
70
60
50
40
TC = -40oC
30
TC = 150oC
20
TC = 25oC
10
0
0
1
2
3
4
5
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE
©2001 Fairchild Semiconductor Corporation
7.5V
2
4
6
8
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
10
FIGURE 2. SATURATION CHARACTERISTICS
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 1. TRANSFER CHARACTERISTICS
80
12.0V
70
80
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
70
TC = -40oC
60
TC = 25oC
50
40
TC = 150oC
30
20
10
0
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTG12N60C3D Rev. B
HGTG12N60C3D
VGE = 15V
20
15
10
5
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
150
20
120
ISC
100
15
80
10
60
5
10
VGE = 10V
VGE = 15V
TJ = 150oC, RG = 25Ω, L = 100mH, VCE(PK) = 480V
300
VGE = 15V
VGE = 10V
200
100
10
5
10
15
20
25
5
30
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
200
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
100
VGE = 10V
VGE = 15V
10
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
12
13
14
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
50
20
20
15
11
400
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
30
40
tSC
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
140
VCE = 360V, RG = 25Ω, TJ = 125oC
ISC, PEAK SHORT CIRCUIT CURRENT(A)
ICE , DC COLLECTOR CURRENT (A)
25
(Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Typical Performance Curves
200
VGE = 10V or 15V
100
90
5
80
5
10
15
20
25
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
30
5
10
15
20
25
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTG12N60C3D Rev. B
HGTG12N60C3D
Typical Performance Curves
3.0
EOFF , TURN-OFF ENERGY LOSS (mJ)
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
1.5
VGE = 10V
1.0
VGE = 15V
0.5
0
5
10
15
25
20
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
2.5
2.0
1.5
VGE = 10V OR 15V
1.0
0.5
0
30
5
ICE , COLLECTOR TO EMITTER CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
TJ = 150oC, TC = 75oC
RG = 25Ω, L = 100µH
100
VGE = 10V
VGE = 15V
fMAX1 = 0.05/(tD(OFF)I + tD(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
10
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W
1
5
10
20
100
60
LIMITED BY
CIRCUIT
40
20
0
0
1500
1000
500
COES
0
5
10
15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2001 Fairchild Semiconductor Corporation
100
200
300
400
500
600
25
FIGURE 14. SWITCHING SAFE OPERATING AREA
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
CIES
0
30
VCE(PK), COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
CRES
25
80
30
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
2000
20
TJ = 150oC, VGE = 15V, RG = 25Ω, L = 100µH
ICE, COLLECTOR TO EMITTER CURRENT (A)
2500
15
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
200
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
IG(REF) = 1.276mA, RL = 50Ω, TC = 25oC
15
600
480
12
VCE = 600V
360
9
240
6
VCE = 400V
VCE = 200V
120
3
0
0
10
20
30
40
QG , GATE CHARGE (nC)
50
60
VGE, GATE TO EMITTER VOLTAGE (V)
2.0
EON , TURN-ON ENERGY LOSS (mJ)
(Continued)
0
FIGURE 16. GATE CHARGE WAVEFORMS
HGTG12N60C3D Rev. B
HGTG12N60C3D
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
(Continued)
100
0.5
0.2
t1
0.1
10-1
PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-2
10-5
10-4
10-3
10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)
100
101
FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
50
TC = 25oC, dIEC/dt = 100A/µs
40
30
tr , RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
40
100oC
20
150oC
25oC
10
trr
30
ta
20
tb
10
0
0
0
0.5
1.0
1.5
2.5
2.0
5
0
3.0
15
20
IEC , FORWARD CURRENT (A)
VEC , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
10
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveform
L = 100µH
90%
RHRP1560
10%
VGE
EOFF
RG = 25Ω
EON
VCE
+
-
90%
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 21. SWITCHING TEST WAVEFORMS
HGTG12N60C3D Rev. B
HGTG12N60C3D
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device (Figure 13)
is presented as a guide for estimating device performance
for a specific application. Other typical frequency vs collector
current (ICE) plots are possible using the information shown
for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
frequency plot (Figure 13) of a typical device shows fMAX1 or
fMAX2 whichever is smaller at each point. The information is
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means, for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup on
the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener Diode from gate to emitter. If gate
protection is required an external Zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. tD(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must not
exceed PD . A 50% duty factor was used (Figure 13) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss during turn-off. All
tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
HGTG12N60C3D Rev. B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
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be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
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with instructions for use provided in the labeling, can be
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4