ETC HGT1S20N60B3S9A

HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
Data Sheet
December 2001
40A, 600V, UFS Series N-Channel IGBTs
Features
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25 oC and 150oC.
• 40A, 600V at TC = 25oC
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
Formerly developmental type TA49050.
Ordering Information
PART NUMBER
COLLECTOR
(FLANGE)
G
PACKAGE
BRAND
HGTP20N60B3
TO-220AB
G20N60B3
HGT1S20N60B3S
TO-263AB
G20N60B3
HGTG20N60B3
TO-247
HG20N60B3
E
JEDEC TO-220AB (ALTERNATE VERSION)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
E
C
COLLECTOR
(FLANGE)
Symbol
G
C
G
JEDEC STYLE TO-247
E
C
E
G
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2001 Fairchild Semiconductor Corporation
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
600
V
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
600
V
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
40
A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
20
A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
160
A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
±20
V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
±30
V
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
30A at 600V
Collector Current Continuous
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
165
W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.32
W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG
-40 to 150
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
300
260
oC
oC
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
4
µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
10
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
BVCES
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
QG(ON)
td(ON)I
trI
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Thermal Resistance
RθJC
TEST CONDITIONS
IC = 250µA, VGE = 0V
VCE = BVCES
IC = IC110, VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
MIN
TYP
MAX
UNITS
600
-
-
V
-
-
250
µA
-
-
1.0
mA
-
1.8
2.0
V
-
2.1
2.5
V
3.0
5.0
6.0
V
-
-
±100
nA
VCE = 480V
100
-
-
A
VCE = 600V
30
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
8.0
-
V
IC = IC110 ,
VCE = 0.5 BVCES
VGE = 15V
-
80
105
nC
VGE = 20V
-
105
135
nC
TC = 150oC, VGE =
15V, RG = 10Ω, L =
45µH
TC = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10Ω
L = 100µH
-
25
-
ns
-
20
-
ns
-
220
275
ns
-
140
175
ns
-
475
-
µJ
-
1050
-
µJ
0.76
oC/W
-
-
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I CE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total TurnOff Energy Loss. Turn-On losses include diode losses.
©2001 Fairchild Semiconductor Corporation
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VCE = 10V
80
TC = 150oC
60
TC = 25oC
40
TC = -40oC
20
0
4
6
8
10
100
VGE = 9V
60
VGE = 8.5V
40
VGE = 8.0V
20
VGE = 7.5V
VGE = 7.0V
0
12
0
2
VGE = 15V
30
20
10
0
125
150
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
40
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, VGE = 15V
CIES
C, CAPACITANCE (pF)
4000
3000
2000
COES
1000
CRES
0
20
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
©2001 Fairchild Semiconductor Corporation
25
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FREQUENCY = 1MHz
15
TC = 25oC
80
60
TC = -40oC
40
TC = 150oC
20
0
0
1
2
3
4
5
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5000
10
10
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
5
8
100
TC , CASE TEMPERATURE (oC)
0
6
FIGURE 2. SATURATION CHARACTERISTICS
50
75
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
50
VGE = 10V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
TC = 25oC
80
VGE, GATE TO EMITTER VOLTAGE (V)
25
12V
VGE = 15V
600
15
480
12
Ig(REF) = 1.685mA
VCE = 600V
RL = 30Ω
360
9
VCE = 400V
240
6
VCE = 200V
120
3
TC = 25oC
0
0
20
40
60
80
100
VGE , GATE TO EMITTER VOLTAGE (V)
100
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
0
QG , GATE CHARGE (nC)
FIGURE 6. GATE CHARGE WAVEFORMS
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves
500
TJ = 150oC, RG = 10Ω, L = 100µH
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
100
(Continued)
50
40
VCE = 480V, VGE = 15V
30
20
10
20
30
VCE = 480V, VGE = 15V
300
200
10
0
TJ = 150oC, RG = 10Ω, L = 100µH
400
100
40
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
1000
TJ = 150oC, RG = 10Ω, L = 100µH
30
40
TJ = 150oC, RG = 10Ω, L = 100µH
VCE = 480V, VGE = 15V
VCE = 480V, VGE = 15V
10
1
100
10
0
10
20
30
40
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
1400
10
20
30
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
2500
TJ = 150oC, RG = 10Ω, L = 100µH
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON , TURN-ON ENERGY LOSS (µJ)
20
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
tfI , FALL TIME (ns)
trI , TURN-ON RISE TIME (ns)
100
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
1200
1000
VCE = 480V, VGE = 15V
800
600
400
200
TJ = 150oC, RG = 10Ω, L = 100µH
2000
VCE = 480V, VGE = 15V
1500
1000
500
0
0
0
10
20
30
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
40
0
10
20
30
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Typical Performance Curves
ICE , COLLECTOR TO EMITTER CURRENT (A)
fMAX , OPERATING FREQUENCY (kHz)
500
(Continued)
TJ = 150oC, TC = 75oC, VGE = 15V
RG = 10Ω, L = 100µH
VCE = 480V
100
fMAX1 = 0.05/(td(OFF)I + td(ON)I)
fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC
10
= 0.76oC/W
5
10
20
30
40
120
TC = 150oC, VGE = 15V, RG = 10Ω
100
80
60
40
20
0
0
ZθJC , NORMALIZED THERMAL RESPONSE
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURREN T
100
100
200
300
400
500
600
700
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14. SWITCHING SAFE OPERATING AREA
0.5
0.2
10-1
0.1
0.05
0.02
10-2
0.01
t1
SINGLE PULSE
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-3
10-5
10-4
10-3
10-2
t2
10-1
101
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
90%
L = 100µH
10%
VGE
RHRP3060
EOFF
EON
VCE
RG = 10Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
FIGURE 17. SWITCHING TEST WAVEFORMS
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions
are taken:
Operating frequency information for a typical device
(Figure 13) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 4, 7, 8, 11
and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each
point. The information is based on measurements of a typical
device and is bounded by the maximum rated junction
temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.
©2001 Fairchild Semiconductor Corporation
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on- state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T JM . td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD . A 50% duty factor was used (Figure 13)
and the conduction losses (P C) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF ; i.e., the collector current equals zero (ICE = 0).
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Rev. B