HGTG18N120BN Data Sheet August 2014 1200 V NPT IGBT Features HGTG18N120BN is based on Non- Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies. • 26 A, 1200 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A • Typical Fall Time . . . . . . . . . . . . . 140ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Packaging Formerly Developmental Type TA49304. JEDEC STYLE TO-247 Ordering Information PART NUMBER HGTG18N120BND PACKAGE TO-247 BRAND 18N120BND NOTE: When ordering, use the entire part number. G Symbol ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 1 C E TO-247 www.fairchildsemi.com HGTG18N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Ratings UNIT 1200 V At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 26 A 160 A Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 100A at 1200V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 390 W 3.12 W/oC Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG 125 mJ -55 to 150 oC Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 260 oC 8 μs Short Circuit Withstand Time (Note 3) at VGE = 12 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 μs Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. ICE = 25 A, L = 40μH, TJ = 25oC 3. VCE(PK) = 960 V, TJ = 125oC, RG = 3 Ω. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector to Emitter Breakdown Voltage BVCES IC = 250 μA, VGE = 0 V 1200 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10 mA, VGE = 0 V 15 - - V - - 250 μA - 300 - μA - - 4 mA - 2.45 2.7 V - 3.8 4.2 V 6.0 7.0 - V - - ±250 nA 100 - - A Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage ICES VCE(SAT) VGE(TH) VCE = 1200 V IC = 18 A, VGE = 15 V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 150 μA, VCE = VGE IGES VGE = ±20 V Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15 V, L = 200 μH, VCE(PK) = 1200 V Gate to Emitter Plateau Voltage VGEP IC = 18 A, VCE = 600 V - 10.5 - V IC = 18 A, VCE = 600 V VGE = 15 V - 165 200 nC VGE = 20 V - 220 250 nC - 23 28 ns - 17 22 ns - 170 200 ns - 90 140 ns - 0.8 1.0 mJ Gate to Emitter Leakage Current On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25oC ICE = 18 A VCE = 960 V VGE = 15 V RG = 3 Ω L = 1 mH Test Circuit (Figure 18) Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 - 1.9 2.4 mJ Turn-Off Energy (Note 3) EOFF - 1.8 2.2 mJ ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 2 www.fairchildsemi.com HGTG18N120BN Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER Current Turn-On Delay Time Current Rise Time SYMBOL td(ON)I trI Current Turn-Off Delay Time Current Fall Time td(OFF)I tfI Turn-On Energy (Note 5) EON1 Turn-On Energy (Note 5) EON2 Turn-Off Energy (Note 4) EOFF Thermal Resistance Junction To Case TEST CONDITIONS IGBT and Diode at TJ = 150oC ICE = 18 A VCE = 960 V VGE = 15 V RG = 3 Ω L = 1 mH Test Circuit (Figure 20) MIN TYP MAX UNIT - 21 26 ns - 17 22 ns - 205 240 ns - 140 200 ns - 0.85 1.1 mJ 3.7 4.9 mJ 2.6 3.1 mJ 0.32 oC/W - RθJC - - NOTE: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device TurnOff Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Fig. 18. Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves ICE , DC COLLECTOR CURRENT (A) 60 VGE = 15V 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) 150 FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200μH 100 80 60 40 20 0 0 200 400 600 800 1000 1200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3 www.fairchildsemi.com HGTG18N120BN TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V TC = 75oC, VGE = 15V, IDEAL DIODE 100 50 10 1 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) TC fMAX2 = (PD - PC) / (EON + EOFF) oC 75 PC = CONDUCTION DISSIPATION 75oC (DUTY FACTOR = 50%) 110oC RØJC = 0.32oC/W, SEE NOTES 110oC 5 10 VGE 15V 12V 15V 12V 20 30 30 250 25 ISC 20 200 15 150 tSC 10 100 5 50 12 40 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) TC = 25oC 40 TC = 150oC 20 DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250μs 0 0 2 4 6 8 TC = -55oC 16 TC = 25oC 80 TC = 150oC 60 40 20 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250μs 0 0 10 2 4 6 8 10 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 4.5 RG = 3Ω, L = 1mH, VCE = 960V EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 15 100 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 10 TJ = 150oC, VGE = 12V, VGE = 15V 8 6 4 2 TJ = 25oC, VGE = 12V, VGE = 15V 0 14 FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 80 TC = -55oC 13 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 60 300 VCE = 960V, RG = 3Ω, TJ = 125oC ISC, PEAK SHORT CIRCUIT CURRENT (A) Unless Otherwise Specified (Continued) tSC , SHORT CIRCUIT WITHSTAND TIME (μs) fMAX, OPERATING FREQUENCY (kHz) Typical Performance Curves RG = 3Ω, L = 1mH, VCE = 960V 4.0 3.5 TJ = 150oC, VGE = 12V OR 15V 3.0 2.5 2.0 TJ = 25oC, VGE = 12V OR 15V 1.5 1.0 0.5 5 10 15 20 25 30 35 5 40 ICE , COLLECTOR TO EMITTER CURRENT (A) HGTG18N120BN Rev. C1 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT ©2001 Fairchild Semiconductor Corporation 10 FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 www.fairchildsemi.com HGTG18N120BN Typical Performance Curves 120 RG = 3Ω, L = 1mH, VCE = 960V RG = 3Ω, L = 1mH, VCE = 960V 100 TJ = 25oC, TJ = 150oC, VGE = 12V 35 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 40 Unless Otherwise Specified (Continued) 30 25 TJ = 25oC, TJ = 150oC, VGE = 12V 80 60 40 20 20 TJ = 25oC, TJ = 150oC, VGE = 15V 15 5 15 10 25 20 30 35 TJ = 25oC OR TJ = 150oC, VGE = 15V 0 40 5 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT RG = 3Ω, L = 1mH, VCE = 960V 250 300 VGE = 12V, VGE = 15V, TJ = 150oC 250 200 150 175 TJ = 150oC, VGE = 12V OR 15V 150 125 100 25 10 15 20 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 25 40 5 VGE , GATE TO EMITTER VOLTAGE (V) 150 100 TC = 25oC 50 6 7 TC = -55oC 11 9 10 12 13 VGE , GATE TO EMITTER VOLTAGE (V) 8 14 HGTG18N120BN Rev. C1 20 30 25 35 40 IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC 15 VCE = 1200V VCE = 800V 10 VCE = 400V 5 0 15 0 50 100 150 200 QG, GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC ©2001 Fairchild Semiconductor Corporation 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE < 0.5%, VCE = 20V PULSE DURATION = 250μs TC = 150oC 15 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 TJ = 25oC, VGE = 12V OR 15V 50 100 ICE, COLLECTOR TO EMITTER CURRENT (A) 200 75 VGE = 12V, VGE = 15V, TJ = 25oC 0 RG = 3Ω, L = 1mH, VCE = 960V 225 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 350 FIGURE 14. GATE CHARGE WAVEFORMS 5 www.fairchildsemi.com HGTG18N120BN Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 6 C, CAPACITANCE (nF) FREQUENCY = 1MHz 5 CIES 4 3 2 1 0 COES CRES 0 5 10 15 20 25 30 DUTY CYCLE < 0.5%, TC = 110oC PULSE DURATION = 250μs 25 VGE = 15V OR 12V 20 VGE = 10V 15 10 5 0 0 FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 1 2 3 4 5 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 10-2 SINGLE PULSE 10-5 10-4 10-3 PD t2 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuits and Waveforms HGTG18N120BND 90% 10% VGE EON EOFF VCE L = 1mH 90% RG = 3Ω + - ICE HGTG18N120BN Rev. C1 tfI trI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation 10% td(OFF)I VDD = 960V FIGURE 19. SWITCHING TEST WAVEFORMS 6 www.fairchildsemi.com HGTG18N120BN Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turnon of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7 www.fairchildsemi.com HGTG18N120BN Mechanical Dimensions Figure 20. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003 ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 8 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or intended for surgical implant into the body or (b) support or sustain life, system whose failure to perform can be reasonably expected to cause and (c) whose failure to perform when properly used in accordance with the failure of the life support device or system, or to affect its safety or instructions for use provided in the labeling, can be reasonably effectiveness. expected to result in a significant injury of the user. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2001 Fairchild Semiconductor Corporation HGTG18N120BN Rev. C1 9 www.fairchildsemi.com