FAIRCHILD FGH60N60UFD

FGH60N60UFD
tm
600V, 60A Field Stop IGBT
Features
General Description
• High current capability
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc
tion and switching losses are essential.
• Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Description
VCES
Collector to Emitter Voltage
VGES
Gate to Emitter Voltage
IC
ICM (1)
PD
Collector Current
@ TC = 25oC
Collector Current
o
@ TC = 100 C
TL
V
120
A
A
@ TC = 25 C
@ TC = 25oC
298
W
Maximum Power Dissipation
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
± 20
A
o
Storage Temperature Range
V
60
Maximum Power Dissipation
Tstg
Units
600
180
o
Pulsed Collector Current
@ TC = 100 C
119
Operating Junction Temperature
TJ
Ratings
W
-55 to +150
o
C
-55 to +150
o
C
300
o
C
Notes:
1: Repetitive test , Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
0.33
o
C/W
RθJC(Diode)
Thermal Resistance, Junction to Case
-
1.1
o
C/W
40
oC/W
RθJA
Thermal Resistance, Junction to Ambient
©2008 Fairchild Semiconductor Corporation
FGH60N60UFD Rev. A
-
1
www.fairchildsemi.com
FGH60N60UFD 600V, 60A Field Stop IGBT
August 2008
Device Marking
Device
Package
Packaging
Type
FGH60N60UFD
FGH60N60UFDTU
TO-247
Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
30ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
600
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.67
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
250
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
4.0
5.0
6.5
V
IC = 60A, VGE = 15V
-
1.9
2.4
V
IC = 60A, VGE = 15V,
TC = 125oC
-
2.1
-
V
-
2855
-
pF
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
-
325
-
pF
-
110
-
pF
Switching Characteristics
td(on)
Turn-On Delay Time
-
23
-
ns
tr
Rise Time
-
58
-
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
td(on)
tr
Rise Time
-
61
-
ns
td(off)
Turn-Off Delay Time
-
141
-
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
-
1.23
-
mJ
Ets
Total Switching Loss
-
3.15
-
mJ
-
130
-
ns
-
40
80
ns
-
1.81
-
mJ
-
0.81
-
mJ
Total Switching Loss
-
2.62
-
mJ
Turn-On Delay Time
-
22
-
ns
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGH60N60UFD Rev. A
VCC = 400V, IC = 60A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 60A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 60A,
VGE = 15V
2
-
63
-
ns
-
1.92
-
mJ
-
188
-
nC
-
21
-
nC
-
97
-
nC
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FGH60N60UFD 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
TC = 25°C unless otherwise noted
Test Conditions
IF = 30A
IES = 30A, dIES/dt = 200A/µs
Qrr
Diode Reverse Recovery Charge
FGH60N60UFD Rev. A
Min.
Typ.
Max
TC = 25oC
-
2.0
2.6
TC = 125oC
-
1.8
-
TC = 25oC
-
47
-
-
179
-
TC = 25oC
-
83
-
o
-
567
-
TC =
125oC
TC = 125 C
3
Units
V
ns
nC
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FGH60N60UFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
o
o
TC = 125 C
TC = 25 C
20V
150
15V
150
120
Collector Current, IC [A]
Collector Current, IC [A]
12V
10V
90
60
VGE = 8V
30
12V
90
60
VGE = 8V
30
0
0
2
4
6
Collector-Emitter Voltage, VCE [V]
0
8
Figure 3. Typical Saturation Voltage
Characteristics
2
4
6
Collector-Emitter Voltage, VCE [V]
8
Figure 4. Transfer Characteristics
180
180
Common Emitter
VGE = 15V
150
o
TC = 25 C
o
TC = 125 C
120
Common Emitter
VCE = 20V
150
Collector Current, IC [A]
Collector Current, IC [A]
10V
120
0
90
60
o
TC = 25 C
o
TC = 125 C
120
90
60
30
30
0
0
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
0
5
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Common Emitter
3.0
120A
2.5
2.0
60A
1.5
IC = 30A
1.0
25
5
20
Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
3.5
1
2
3
4
Gate-Emitter Voltage,VGE [V]
Figure 6. Saturation Voltage vs. VGE
4.0
Collector-Emitter Voltage, VCE [V]
15V
20V
16
12
8
120A
4
60A
IC = 30A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGH60N60UFD Rev. A
o
TC = -40 C
4
0
3
6
9
12
15
Gate-Emitter Voltage, VGE [V]
18
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FGH60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Saturation Voltage vs. VGE
20
20
Common Emitter
o
TC = 25 C
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Common Emitter
16
12
8
60A
120A
4
IC = 30A
0
0
3
6
9
12
15
Gate-Emitter Voltage, VGE [V]
o
TC = 125 C
16
12
8
120A
4
IC = 30A
0
18
Figure 9. Capacitance Characteristics
60A
0
18
15
Common Emitter
VGE = 0V, f = 1MHz
Common Emitter
Gate-Emitter Voltage, VGE [V]
o
o
TC = 25 C
Capacitance [pF]
6
9
12
15
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
6000
Cies
4000
Coes
2000
Cres
0
1
TC = 25 C
12
300V
VCC = 100V
200V
9
6
3
0
10
Collector-Emitter Voltage, VCE [V]
0
30
Figure 11. SOA Characteristics
50
100
150
Gate Charge, Qg [nC]
200
Figure 12. Turn off Switching SOA Characteristics
300
500
10µs
100
100
100µs
10
Collector Current, IC [A]
Collector Current, Ic [A]
3
1ms
10 ms
1
DC
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
FGH60N60UFD Rev. A
1
1000
10
100
1000
Collector-Emitter Voltage, VCE [V]
5
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FGH60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Gate Resistance
Figure 14. Turn-off Characteristics vs.
Gate Resistance
300
6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
Switching Time [ns]
Switching Time [ns]
o
100
tr
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
td(on)
TC = 25 C
1000
o
TC = 125 C
td(off)
100
tf
o
TC = 25 C
o
TC = 125 C
10
0
10
20
30
40
Gate Resistance, RG [Ω]
10
50
0
20
30
40
50
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs
Collector Current
Figure 16. Turn-off Characteristics vs.
Collector Current
500
1000
Common Emitter
VGE = 15V, RG = 5Ω
Common Emitter
VGE = 15V, RG = 5Ω
o
o
TC = 25 C
TC = 25 C
o
o
tr
TC = 125 C
Switching Time [ns]
Switching Time [ns]
10
100
TC = 125 C
td(off)
100
td(on)
tf
10
30
0
20
40
60
80
100
120
0
20
40
Collector Current, IC [A]
60
80
100
120
Collector Current, IC [A]
Figure 17. Switching Loss vs. Gate Resistance
Figure 18. Switching Loss vs. Collector Current
20
20
Common Emitter
VCC = 400V, VGE = 15V
10
o
IC = 60A
TC = 25 C
o
o
Switching Loss [mJ]
TC = 25 C
Switching Loss [mJ]
Common Emitter
VGE = 15V, RG = 5Ω
10
o
TC = 125 C
Eon
1
Eon
TC = 125 C
Eoff
1
Eoff
0.1
0
10
FGH60N60UFD Rev. A
20
30
40
Gate Resistance, RG [Ω]
0
50
20
40
60
80
100
120
Collector Current, IC [A]
6
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FGH60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
Figure 19. Forward Characteristics
Figure 20. Reverse Current
200
500
100
100
o
Reverse Current , IR [µA]
Forward Current, IF [A]
TC = 125 C
o
TJ = 125 C
o
TJ = 25 C
10
o
TJ = 75 C
o
TC = 25 C
10
o
TC = 75 C
1
0.1
o
TC = 25 C
o
TC = 125 C
0.01
1
0
1
2
3
Forward Voltage, VF [V]
0
4
Figure 21. Stored Charge
600
Figure 22. Reverse Recovery Time
60
100
Reverse Recovery Time, trr [ns]
500
o
TC = 125 C
Reverse Current , IR [µA]
200
400
Reverse Voltage, VR [V]
10
o
TC = 75 C
1
0.1
o
TC = 25 C
200A/µs
50
di/dt = 100A/µs
40
30
0.01
0
200
400
Reverse Voltage, VR [V]
5
600
20
40
60
Forward Current, IF [A]
Figure 23. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.01
0.05
0.02
0.01
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGH60N60UFD Rev. A
7
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FGH60N60UFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics
FGH60N60UFD 600V, 60A Field Stop IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
FGH60N60UFD Rev. A
8
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FGH60N60UFD Rev. A
9
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FGH60N60UFD 600V, 60A Field Stop IGBT
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