SMOS44N80

SMOS44N80
Power MOSFETs
S
S
D
Dimensions SOT-227(ISOTOP)
Dim.
G
G=Gate, D=Drain,S=Source
Test Conditions
Symbol
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
37.80
30.30
38.20
1.186
1.489
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
V
W
3.30
0.780
4.57
0.830
0.130
19.81
0.180
21.08
Maximum Ratings
Unit
VDSS
TJ=25oC to 150oC
800
VDGR
TJ=25oC to 150oC; RGS=1M
800
VGS
Continuous
±20
VGSM
Transient
±30
ID25
TC=25oC; Chip capability
44
A
IDM
TC=25oC; pulse width limited by TJM
176
A
o
V
V
IAR
TC=25 C
44
A
EAR
TC=25oC
64
mJ
dv/dt
IS
IDM; di/dt
5
V/ns
TJ
150oC; RG=2
700
W
PD
100A/us; VDD
TC=25oC
VDSS'
TJ
-55...+150
TJM
150
Tstg
EAS
VISOL
Md
Weight
o
C
-55...+150
o
4
TC=25 C
50/60Hz,RMS
t=1 min
2500
IISOL 1mA
t=1 s
3000
Mounting torque
1.5/13
Terminal connection torque
1.5/13
30
J
V~
Nm/Ib.in.
g
SMOS44N80
Power MOSFETs
(TJ=25oC, unless otherwise specified)
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Characteristic Values
min.
typ.
max.
800
2
4.5
±200
100
2
0.145
Test Conditions
VGS=0V; ID=3 mA
VDS=VGS; ID=8 mA
VGS=±20VDC; VDS=0
VDS=VDSS; TJ=25oC
VGS=0V; TJ=125oC
VGS=10V; ID=0.5ID25
Pulse test, t 300us;
duty cycle d 2%
Unit
V
V
nA
uA
mA
(TJ=25oC, unless otherwise specified)
Symbol
gts
Cies
Coes
Cres
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCK
Characteristic Values
min.
typ.
max.
Test Conditions
VDS=15V; ID=0.5ID25; pulse test
32
VGS=0V; VDS=25V; f=1MHz
VGS=10V; VDS=0.5VDSS'; ID=0.5ID25
VGS=10V; VDS=0.5VDSS; ID=0.5ID25
RG=1 (External)
pF
nC
0.05
ns
ns
ns
ns
K/W
K/W
(TJ=25oC, unless otherwise specified)
Test Conditions
IS
ISM
VGS=0V
Repetitive; pulse width limited by TJM
VSD
IF=IS; VGS=0V;
Pulse test, t 300us, duty cycle d
trr
QRM
IRM
S
0.18
Source-Drain Diode
Symbol
45
14500
1300
330
380
70
170
35
48
100
24
Unit
IF=25A; -di/dt=100A/us; VR=100V;
Characteristic Values
min.
typ.
max.
44
175
Unit
A
A
1.3
V
250
ns
uC
A
2%
1.2
8