IXYS IXFN230N10

Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 230N10
RDS(on)
t rr
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
S
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
100
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
100
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
IL(RMS)
TC = 25°C, Chip capability
Terminal current limit
230
100
A
A
IDM
IAR
TC = 25°C, pulse width limited by TJM
TC = 25°C
920
150
A
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
700
W
TJ
TJM
-55 ... +150
150
°C
°C
Tstg
-55 ... +150
°C
2500
3000
V~
V~
Md
50/60 Hz, RMS
IISOL ≤ 1 mA
= 100
V
= 230
A
=
6 mW
< 250 ns
G
S
VISOL
VDSS
ID25
Maximum Ratings
t = 1 min
t=1s
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
g
Applications
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
100
VGH(th)
VDS = VGS, ID = 8 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
© 1998 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
4.0
V
±200
nA
100
2
µA
mA
6
mΩ
•
•
•
•
•
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
•
•
•
Easy to mount
Space savings
High power density
98548A (9/98)
IXFN 230N10
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 15 V; ID = 60A, pulse test
80
Ciss
Coss
120
S
21000
pF
5700
pF
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
1500
pF
td(on)
60
ns
90
ns
150
ns
55
ns
690
nC
150
nC
370
nC
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG
= 1 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.18
RthCK
K/W
0.05
Source-Drain Diode
K/W
M4 screws (4x) supplied
Dim.
Millimeter
Min.
Max.
Min.
Inches
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
230
A
ISM
Repetitive;
pulse width limited by TJM
920
A
VSD
IF = 100A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.2
V
trr
IF = 50A, -di/dt = 100 A/µs, VR = 100 V TJ =25°C
QRM
IRM
miniBLOC, SOT-227 B
TJ =25°C
250
1.2
9
ns
µC
A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025