Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS(on) t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 IL(RMS) TC = 25°C, Chip capability Terminal current limit 230 100 A A IDM IAR TC = 25°C, pulse width limited by TJM TC = 25°C 920 150 A A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 700 W TJ TJM -55 ... +150 150 °C °C Tstg -55 ... +150 °C 2500 3000 V~ V~ Md 50/60 Hz, RMS IISOL ≤ 1 mA = 100 V = 230 A = 6 mW < 250 ns G S VISOL VDSS ID25 Maximum Ratings t = 1 min t=1s Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight 30 miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier g Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 100 VGH(th) VDS = VGS, ID = 8 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 1998 IXYS All rights reserved TJ = 25°C TJ = 125°C V 4.0 V ±200 nA 100 2 µA mA 6 mΩ DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Advantages Easy to mount Space savings High power density 98548A (9/98) IXFN 230N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 60A, pulse test 80 Ciss Coss 120 S 21000 pF 5700 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 1500 pF td(on) 60 ns 90 ns 150 ns 55 ns 690 nC 150 nC 370 nC tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.18 RthCK K/W 0.05 Source-Drain Diode K/W M4 screws (4x) supplied Dim. Millimeter Min. Max. Min. Inches Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 230 A ISM Repetitive; pulse width limited by TJM 920 A VSD IF = 100A, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.2 V trr IF = 50A, -di/dt = 100 A/µs, VR = 100 V TJ =25°C QRM IRM miniBLOC, SOT-227 B TJ =25°C 250 1.2 9 ns µC A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025