TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology. Block Diagram Features ● ● ● ● Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. Ordering Information Part No. Package TSM4N60CZ C0 TO-220 TSM4N60CZ C0G TO-220 TSM4N60CI C0 ITO-220 TSM4N60CI C0G ITO-220 TSM4N60CH C5 TO-251 TSM4N60CH C5G TO-251 TSM4N60CP RO TO-252 TSM4N60CP ROG TO-252 Note: “G” denotes for Halogen Free Packing 50pcs / Tube 50pcs / Tube 50pcs / Tube 50pcs / Tube 75pcs / Tube 75pcs / Tube 2.5Kpcs / 13” Reel 2.5Kpcs / 13” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4 A Pulsed Drain Current IDM 16 A Single Pulse Drain to Source Avalanche Energy (note c) EAS 120 mJ Avalanche Current, Repetitive or Not-Repetitive (note d) IAR 10 mJ Peak Diode Recovery dv/dt (note e) dv/dt 4.5 V/ns Total Power Dissipation TO-220 / TO-251 / TO-252 o @TC = 25 C ITO-220 Operating Junction Temperature PTOT TJ Operating Junction and Storage Temperature Range TJ, TSTG 1/11 70 25 W +150 o -55 to +150 o C C Version: D10 TSM4N60 600V N-Channel Power MOSFET Thermal Performance Parameter Thermal Resistance Symbol TO-220 / TO-251 / TO-252 Junction to Case ITO-220 Thermal Resistance TO-220 / ITO-220 Junction to Ambient TO-251 / TO-252 Limit Unit 1.78 RӨJC o C/W 5 62.5 RӨJA o C/W 100 Notes: Surface mounted on FR4 board t ≤ 10sec Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 600 -- -- V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 2.0 -- 4.0 V Drain-Source On-State Resistance VGS = 10V, ID = 2A RDS(ON) -- 2 2.5 Ω Qg -- 15 20 Qgs -- 2.8 -- Qgd -- 6.2 -- Ciss -- 545 710 Coss -- 60 80 Crss -- 8 11 td(on) -- 10 30 tr -- 35 80 td(off) -- 45 100 tf -- 40 90 On Characteristics Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 480V, ID = 4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz Turn-On Delay Time Turn-On Rise Time VGS = 10V, ID = 4A, Turn-Off Delay Time VDD = 300V, RG = 25Ω Turn-Off Fall Time nC pF nS Source-Drain Diode Ratings and Characteristics Continuous Source Current Integral Reverse p-n Junction IS -- -- 4 Pulse Source Current Diode in the MOSFET ISM -- -- 16 Diode Forward Voltage IS = 4A, VGS = 0V VSD -- -- 1.4 A V Reverse Recovery Time IS = 4A, VGS = 0V trr -- 300 -- nS Reverse Recovery Charge dlF/dt=100A/us Qrr -- 2.2 -- uC Notes: a. Pulse test: pulse width <=300uS, duty cycle <=2% b. Essentially Independent of Operating Temperature. c. o VDD = 50V, IAS=4A, L=27.5mH, RG=25Ω, Starting TJ = 25 C d. Pulse width limited by junction temperature e. ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC 2/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform EAS Test Circuit & Waveform 3/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Diode Reverse Recovery Time Test Circuit & Waveform 4/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted) Output Characteristics Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 5/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Breakdown Voltage vs. Temperature Threshold Voltage vs. Temperature Maximum Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Ambient 6/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET TO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O P TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 0.381 2.345 4.690 12.700 8.382 14.224 3.556 0.508 27.700 2.032 0.255 5.842 2.940 6.350 1.106 2.715 5.430 14.732 9.017 16.510 4.826 1.397 29.620 2.921 0.610 6.858 0.096 0.015 0.092 0.092 0.500 0.330 0.560 0.140 0.020 1.060 0.080 0.010 0.230 0.116 0.250 0.040 0.058 0.107 0.581 0.355 0.650 0.190 0.055 1.230 0.115 0.024 0.270 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 7/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET ITO-220 Mechanical Drawing DIM A B C D E F G H I J K L M N O ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) ∮1.40 (typ.) ∮0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 8/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET TO-251 Mechanical Drawing DIM A b b1 b2 b3 C C1 D E e L L1 L2 L3 TO-251 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 0.083 0.098 2.10 2.50 0.026 0.041 0.65 1.05 0.023 0.024 0.58 0.62 0.189 0.205 4.80 5.20 0.027 0.028 0.68 0.72 0.014 0.026 0.35 0.65 0.016 0.024 0.40 0.60 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 2.30 BSC 7.00 8.00 1.40 1.80 1.30 1.70 0.50 0.90 0.09 BSC 0.276 0.315 0.055 0.071 0.051 0.067 0.020 0.035 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 9/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET TO-252 Mechanical Drawing DIM A B C D E F G G1 H H1 J K L M TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 2.30 BSC 0.090 BSC 0.402 0.425 10.20 10.80 0.209 0.224 5.30 5.70 0.248 0.264 6.30 6.70 0.083 0.098 2.10 2.50 0.000 0.008 0.00 0.20 0.189 0.205 4.80 5.20 0.016 0.031 0.40 0.80 0.016 0.024 0.40 0.60 0.014 0.026 0.35 0.65 0.132 0.144 3.35 3.65 0.020 0.043 0.50 1.10 0.035 0.059 0.90 1.50 0.051 0.067 1.30 1.70 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 10/11 Version: D10 TSM4N60 600V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. 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