40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V

SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
PRIMARY CHARACTERISTICS
BVDDSS
20V
RDS(ON)
4.2mΩ
ID
40A
PR-PAK PACKAGE
FEATURES
DESCRIPTION
The SPR20N01 uses advanced Trench

Low On-Resistance

Low Input Capacitance
technology and designs to provide excellent

Green Device Available
RDS(ON) with low gate charge. This device

Low Miller Charge
is suitable for use in PWM, load switching

100% EAS and 100% Rg Guaranteed
and general purpose applications.


The SPR20N01 meet the RoHS and Green
Product requirement, 100% EAS and 100%
Rg guaranteed with full function reliability
approved.
Absolute Maximum Ratings
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±20
V
ID @TC=25℃
40
A
ID @TC=70℃
32
A
IDM
100
A
ID @TA=25℃
29
A
ID @TA=70℃
23
A
PD @TC=25℃
30.4
W
PD @TA=25℃
2.0
W
Single Pulse Avalanche Energy, L=0.1mH
EAS
11.25
mJ
Single Pulse Avalanche Current, L=0.1mH
IAS
15
A
TJ, TSTG
-55 ~ +150
℃
Continuous Drain Current
Pulsed Drain Current
(NOTE 1)
Continuous Drain Current
Total Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-ambient
(NOTE 2)
(NOTE 2)
Thermal Resistance Junction-case
2014.12
Symbol
Conditions
Max. Value
Unit
RθJA
Steady State
30
℃/W
RθJC
Steady State
3.5
℃/W
www.willas.com.tw
Rev. T01
P1
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Electrical Characteristics (Tj = 25℃ unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
VGS=0, ID=250uA
Gate Threshold Voltage
VGS(th)
0.5
0.8
1.2
V
VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V
Drain-Source Leakage Current
IDSS
-
-
1
uA
VDS=16V, VGS=0
-
3.6
4.2
-
4.7
5.5
Static Drain-Source On-Resistance
RDS(ON)
Total Gate Charge
Qg
-
8.4
-
Gate-Source Charge
Qgs
-
3.1
-
Gate-Drain (“Miller”) Change
Qgd
-
4.7
-
Td(on)
-
17
-
Tr
-
14
-
Td(off)
-
16
-
Tf
-
12
-
Input Capacitance
Ciss
-
877
-
Output Capacitance
Coss
-
283
-
Reverse Transfer Capacitance
Crss
-
148
-
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
mΩ
Test Conditions
VGS=10V, ID=12A
VGS=4.5V, ID=10A
nC
ID=10A
VDS=10V
VGS=4.5V
ns
VDS=10V
ID=10A
VGS=4.5V
RG=3Ω
pF
VGS=0V
VDS=10V
f=1.0MHz
Guaranteed Avalanche Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Single Pulse Avalanche Energy(NOTE 3)
EAS
4
-
-
mJ
Symbol
Min.
Typ.
Max.
Unit
Diode Forward Voltage
VSD
-
-
1.3
V
IS=10A, VGS=0V
Reverse Recovery Time
trr
-
14
-
ns
Reverse Recovery Charge
Qrr
11
-
nC
IF=10A, dI/dt=100A/μs,
TJ=25℃
VDD=15V, L=0.1mH, IAS=9A
Source-Drain Diode
Parameter
Test Conditions
Notes: 1. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θCA is determined by the
user's board design. RθJA shown below for single device operation on FR-4 in still air.
3. The Min. value is 100% EAS tested guarantee.
2014.12
www.willas.com.tw
Rev. T01
P2
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
2014.12
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.3 On-Resistance vs. Drain Current
Fig.4 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
Fig.6 Forward Characteristics of Reverse
www.willas.com.tw
Rev. T01
P3
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristic
Fig.9 Safe Operating Area
Fig.10 Power Dissipation
Fig.11 Drain Current vs. TJ
2014.12
Fig.12 Transient Thermal Impedance
www.willas.com.tw
Rev. T01
P4
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
◆Mounting and Storage Conditions(Reflow soldering Temperature profile)
Willas has set the following requirements for the heat resistance of components.
[Assumption] Moisture absorption prior to the reflow/flow soldering of components in dry pack.
With components in dry pack, reflow/flow soldering shall be completed within 168 hours after unpacking
(Storage environment:30°C 70%RH)
peak
E
Temperature [°C]
230°C
217°C *3
180°C
Preheating
120°C
Room
temp. A
B
D
C
Time [sec]
Conditions
Components size 1
28mm or less
A Temp. rise gradient 2
Unit
1-3
°C/sec
50 - 150
sec
120 - 180
°C
1-3
°C/sec
D Time over 230°C
90
sec
Peak temperature
260
°C
Peak-temp. hold time
1-5
sec
2
times
B
Heating time
Heating temperature
C Temp. rise gradient
E
Soldering
2
*1.Length or width, whichever is the greater outside dimension (length for a rectangular component)
*2.Temperatures and time for A through E in the table above shall be measured on the top surface of the
components size.
*3.Time over 217 °C be 90-150 seconds .
2014.12
www.willas.com.tw
Rev. T01
P5
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
353$.
Outline Drawing
REF.
A
A1
b
c
D
F
Millimeter
Min.
Max.
0.80
1.00
0.00
0.05
0.35
0.49
0.254 Ref.
4.90
5.10
1.40 Ref.
REF.
E
e
H
L1
G
K
Millimeter
Min.
Max.
5.70
5.90
1.27 BSC.
5.95
6.20
0.10
0.18
0.60 Ref.
4.00 Ref.
Dimensions in inches and (millimeters)
Rev.A
2014.12
www.willas.com.tw
Rev. T01
P6
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Suggested Soldering Pad Layout353$.
.(.)
.(.)
.(.)
.(.)
.(.)
.(.)
.024(0.62)
.(.)
.(.)
.(.)
.()
Dimensions in inches and (millimeters)
2014.12
www.willas.com.tw
RevA
Rev. T01
P7
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Reel Taping Specification - Surface Mount Device
Package
Packing Option
Immediate
Quantity
Intermediate
Container
Intermediate
Quantity
Outer box
Quantity
PR-PAK
13" Reel
3000 pcs
(reel)
Box
6000 pcs
(2 reels)
30 K
(5Box)
2014.12
www.willas.com.tw
Rev. T01
P8
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Packing Method
123
123
123
123
123
123
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2014.12
www.willas.com.tw
Rev. T01
P9
SPR20N01
40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V
Ordering Information: Device PN SPR20N01 -T(1)H(2)-WS
Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel Packing (2) Haloge free p
roduct for packing code suffix “H”
***Disclaimer***
WILLAS reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifications can
and do vary in different applications and actual performance may vary over time.
WILLAS does not assume any liability arising out of the application or
use of any product or circuit.
This is the preliminary specification. WILLAS products are not designed, intended or
authorized for use in medical, life-saving implant or other applications intended for
life-sustaining or other related applications where a failure or malfunction of component
or circuitry may directly or indirectly cause injury or threaten a life without expressed
written approval of WILLAS. Customers using or selling WILLAS components for use in
such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc
and its subsidiaries harmless against all claims, damages and expenditures.
2014.12
www.willas.com.tw
Rev. T01
P 10