SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V PRIMARY CHARACTERISTICS BVDDSS 20V RDS(ON) 4.2mΩ ID 40A PR-PAK PACKAGE FEATURES DESCRIPTION The SPR20N01 uses advanced Trench Low On-Resistance Low Input Capacitance technology and designs to provide excellent Green Device Available RDS(ON) with low gate charge. This device Low Miller Charge is suitable for use in PWM, load switching 100% EAS and 100% Rg Guaranteed and general purpose applications. The SPR20N01 meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±20 V ID @TC=25℃ 40 A ID @TC=70℃ 32 A IDM 100 A ID @TA=25℃ 29 A ID @TA=70℃ 23 A PD @TC=25℃ 30.4 W PD @TA=25℃ 2.0 W Single Pulse Avalanche Energy, L=0.1mH EAS 11.25 mJ Single Pulse Avalanche Current, L=0.1mH IAS 15 A TJ, TSTG -55 ~ +150 ℃ Continuous Drain Current Pulsed Drain Current (NOTE 1) Continuous Drain Current Total Power Dissipation Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient (NOTE 2) (NOTE 2) Thermal Resistance Junction-case 2014.12 Symbol Conditions Max. Value Unit RθJA Steady State 30 ℃/W RθJC Steady State 3.5 ℃/W www.willas.com.tw Rev. T01 P1 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Electrical Characteristics (Tj = 25℃ unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.5 0.8 1.2 V VDS=VGS, ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=16V, VGS=0 - 3.6 4.2 - 4.7 5.5 Static Drain-Source On-Resistance RDS(ON) Total Gate Charge Qg - 8.4 - Gate-Source Charge Qgs - 3.1 - Gate-Drain (“Miller”) Change Qgd - 4.7 - Td(on) - 17 - Tr - 14 - Td(off) - 16 - Tf - 12 - Input Capacitance Ciss - 877 - Output Capacitance Coss - 283 - Reverse Transfer Capacitance Crss - 148 - Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time mΩ Test Conditions VGS=10V, ID=12A VGS=4.5V, ID=10A nC ID=10A VDS=10V VGS=4.5V ns VDS=10V ID=10A VGS=4.5V RG=3Ω pF VGS=0V VDS=10V f=1.0MHz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy(NOTE 3) EAS 4 - - mJ Symbol Min. Typ. Max. Unit Diode Forward Voltage VSD - - 1.3 V IS=10A, VGS=0V Reverse Recovery Time trr - 14 - ns Reverse Recovery Charge Qrr 11 - nC IF=10A, dI/dt=100A/μs, TJ=25℃ VDD=15V, L=0.1mH, IAS=9A Source-Drain Diode Parameter Test Conditions Notes: 1. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θJC is guaranteed by design while R θCA is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air. 3. The Min. value is 100% EAS tested guarantee. 2014.12 www.willas.com.tw Rev. T01 P2 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V 2014.12 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 On-Resistance vs. Drain Current Fig.4 Normalized RDSON vs. TJ Fig.5 Normalized VGS(th) vs. TJ Fig.6 Forward Characteristics of Reverse www.willas.com.tw Rev. T01 P3 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristic Fig.9 Safe Operating Area Fig.10 Power Dissipation Fig.11 Drain Current vs. TJ 2014.12 Fig.12 Transient Thermal Impedance www.willas.com.tw Rev. T01 P4 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V ◆Mounting and Storage Conditions(Reflow soldering Temperature profile) Willas has set the following requirements for the heat resistance of components. [Assumption] Moisture absorption prior to the reflow/flow soldering of components in dry pack. With components in dry pack, reflow/flow soldering shall be completed within 168 hours after unpacking (Storage environment:30°C 70%RH) peak E Temperature [°C] 230°C 217°C *3 180°C Preheating 120°C Room temp. A B D C Time [sec] Conditions Components size 1 28mm or less A Temp. rise gradient 2 Unit 1-3 °C/sec 50 - 150 sec 120 - 180 °C 1-3 °C/sec D Time over 230°C 90 sec Peak temperature 260 °C Peak-temp. hold time 1-5 sec 2 times B Heating time Heating temperature C Temp. rise gradient E Soldering 2 *1.Length or width, whichever is the greater outside dimension (length for a rectangular component) *2.Temperatures and time for A through E in the table above shall be measured on the top surface of the components size. *3.Time over 217 °C be 90-150 seconds . 2014.12 www.willas.com.tw Rev. T01 P5 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V 353$. Outline Drawing REF. A A1 b c D F Millimeter Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 Ref. 4.90 5.10 1.40 Ref. REF. E e H L1 G K Millimeter Min. Max. 5.70 5.90 1.27 BSC. 5.95 6.20 0.10 0.18 0.60 Ref. 4.00 Ref. Dimensions in inches and (millimeters) Rev.A 2014.12 www.willas.com.tw Rev. T01 P6 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Suggested Soldering Pad Layout353$. .(.) .(.) .(.) .(.) .(.) .(.) .024(0.62) .(.) .(.) .(.) .() Dimensions in inches and (millimeters) 2014.12 www.willas.com.tw RevA Rev. T01 P7 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Reel Taping Specification - Surface Mount Device Package Packing Option Immediate Quantity Intermediate Container Intermediate Quantity Outer box Quantity PR-PAK 13" Reel 3000 pcs (reel) Box 6000 pcs (2 reels) 30 K (5Box) 2014.12 www.willas.com.tw Rev. T01 P8 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Packing Method 123 123 123 123 123 123 Trailer>17cm Leader>40cm &DUWRQ/$%(/GLUHFWLRQ%R[ODEHOLQVWUXFWLRQ LABEL3DVWH'HSDUWPHQW LABEL $QWLVWDWLFPDUN *UDSK 2SHQLQJVSRVWHG 7UDQVSDUHQWWDSH F 2014.12 www.willas.com.tw Rev. T01 P9 SPR20N01 40A N-Channel ENHANCEMENT MODE POWER MOSFET 20V Ordering Information: Device PN SPR20N01 -T(1)H(2)-WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel Packing (2) Haloge free p roduct for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.12 www.willas.com.tw Rev. T01 P 10