SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V PRIMARY CHARACTERISTICS BVDDSS 60V RDS(ON) .2mΩ ID A PR-PAK PACKAGE FEATURES DESCRIPTION The SPR60N0 uses advanced Trench Low On-Resistance Low Input Capacitance technology and designs to provide excellent Green Device Available RDS(ON) with low gate charge. This device Low Miller Charge is suitable for use in PWM, load switching 100% EAS and 100% Rg Guaranteed and general purpose applications. The SPR60N0 meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID @TC=25℃ 45 A ID @TC=100℃ 28 A IDM 180 A PD @TC=25℃ 63 W PD @TA=25℃ 2 W EAS 61 mJ IAS 35 A TJ, TSTG -55 ~ +150 ℃ Continuous Drain Current127(1 Pulsed Drain Current 127(2 Total Power Dissipation127(4 Single Pulse Avalanche Energy, L=0.1mH127(3 Single Pulse Avalanche Current,L=0.1mH 127(3 Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient Symbol 127(1 Thermal Resistance Junction-case127(1 2014.1ϭ Conditions Max. Value Unit RθJA Steady State 62 ℃/W RθJC Steady State 2.0 ℃/W www.willas.com.tw Rev. d01 P1 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Electrical Characteristics (Tj = 25℃ unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Symbol Min. Typ. Max. Unit BVDSS 60 - - V - 0.03 - V/℃ VGS(th) 1.2 1.6 2.5 V VDS=VGS, ID=250uA gfs - 11.7 - S VDS=10V, ID=6A IGSS - - ±100 nA VGS= ±20V - - 1 uA VDS=60V, VGS=0 - - 10 uA VDS=48V, VGS=0 - 10 12 - 12 15 △ BVDSS /△ Tj Drain-Source Leakage Current(Tj=25℃) Drain-Source Leakage Current(Tj=125℃) 127(2 Static Drain-Source On-Resistance 127(2 IDSS RDS(ON) Total Gate Charge Qg - 39.2 - Gate-Source Charge Qgs - 5.9 - Gate-Drain (“Miller”) Change Qgd - 8.8 - Td(on) - 9.6 - Tr - 28.2 - Td(off) - 45.3 - Tf - 10.9 - Input Capacitance Ciss - 2100 - Output Capacitance Coss - 165 - Reverse Transfer Capacitance Crss - 80 - Rg - 1.6 Symbol Min. EAS Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Resistance mΩ Test Conditions VGS=0, ID=250uA Reference to 25℃, ID=1mA VGS=10V, ID=10A VGS=4.5V, ID=8A nC ID=10A VDS=30V VGS=10V ns VDS=15V ID=1A VGS=10V RG=6Ω pF VGS=0V VDS=25V f=1.0MHz 3.2 Ω f=1.0MHz Typ. Max. Unit 33.8 - - mJ Symbol Min. Typ. Max. Unit VSD - - 1.0 V IS - - 45 A ISM - - 180 A Guaranteed Avalanche Characteristics Parameter 127(5 Single Pulse Avalanche Energy Test Conditions VDD=25V, L=0.1mH, IAS=26A Source-Drain Diode Parameter Diode Forward Voltage127(2 Continuous Source Current Pulsed Source Current 127(1,6 127(2,6 Test Conditions IS=1A, VGS=0V VG=VD=0V, Force Current Notes: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, ≦10sec, 125℃/W at steady state. 2. The data tested by pulsed, pulse width ≦ 300us, duty cycle ≦ 2%. 3. The EAS data shows Max. rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=35A. 4. The power dissipation is limited by 150℃ junction temperature. 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 2014.1ϭ www.willas.com.tw Rev. d01 P2 SPR60N04 I D Drain Current (A) Normalized R DS(ON) (mΩ) 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V T C Case Temperature (℃) T J Junction Temperature (℃) Fig.1 Normalized RDSON vs. TJ V GS Gate-to-source Voltage (V) Normalized Gate Threshold Voltage (V) Fig.2 Drain Current vs. TC VDS=30V I D=10A T J Junction Temperature (℃) Q G Total Gate Charge (nC) Fig.4 Gate Charge Characteristics I D Drain Current (A) RΘ JA Normalized Transient Response Fig.3 Normalized V th vs. TJ Square Wave Pulse Duration (sec) Fig.5 Normalized Transient Response 2014.1ϭ www.willas.com.tw V DS Drain-to-Source Voltage (V) Fig.6 Safe Operating Area Rev. d01 P3 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Fig.7 Switching Time Waveform 2014.1ϭ Fig.8 Unclamped Inductive Switching Waveform www.willas.com.tw Rev. d01 P4 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V ◆Mounting and Storage Conditions(Reflow soldering Temperature profile) Willas has set the following requirements for the heat resistance of components. [Assumption] Moisture absorption prior to the reflow/flow soldering of components in dry pack. With components in dry pack, reflow/flow soldering shall be completed within 168 hours after unpacking (Storage environment:30°C 70%RH) peak E Temperature [°C] 230°C 217°C *3 180°C Preheating 120°C Room temp. A B D C Time [sec] Conditions Components size *1 28mm or less Unit 1-3 °C/sec 50 - 150 sec 120 - 180 °C 1-3 °C/sec D Time over 230°C 90 sec Peak temperature 260 °C Peak-temp. hold time 1-5 sec 2 times A Temp. rise gradient *2 B Heating time Heating temperature C Temp. rise gradient E Soldering *2 *1.Length or width, whichever is the greater outside dimension (length for a rectangular component) *2.Temperatures and time for A through E in the table above shall be measured on the top surface of the components size. *3.Time over 217 °C be 90-150 seconds . 2014.1ϭ www.willas.com.tw Rev. d01 P5 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V 353$. Outline Drawing REF. A A1 b c D F Millimeter Min. Max. 0.80 1.00 0.00 0.05 0.35 0.49 0.254 Ref. 4.90 5.10 1.40 Ref. REF. E e H L1 G K Millimeter Min. Max. 5.70 5.90 1.27 BSC. 5.95 6.20 0.10 0.18 0.60 Ref. 4.00 Ref. Dimensions in inches and (millimeters) Rev.A 2014.1ϭ www.willas.com.tw Rev. d01 P6 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Suggested Soldering Pad Layout353$. .(.) .(.) .(.) .(.) .(.) .(.) .024(0.62) .(.) .(.) .(.) .() Dimensions in inches and (millimeters) 2014.1ϭ www.willas.com.tw RevA Rev. d01 P7 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Reel Taping Specification - Surface Mount Device Package Packing Option Immediate Quantity Intermediate Container Intermediate Quantity Outer box Quantity PR-PAK 13" Reel 3000 pcs (reel) Box 6000 pcs (2 reels) 30 K (5Box) 2014.1ϭ www.willas.com.tw Rev. d01 P8 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Packing Method 123 123 123 123 123 123 Trailer>17cm Leader>40cm LABEL LABEL LABEL &DUWRQ/$%(/GLUHFWLRQ。%R[ODEHOLQVWUXFWLRQ LABEL3DVWH'HSDUWPHQW LABEL $QWLVWDWLFPDUN *UDSK 2SHQLQJVSRVWHG 7UDQVSDUHQWWDSH Note: 1 Fxclusive white color box. 2 Use 10cm yellow tape to fixed on reel tall and add put a protect ring. 3 Full box use transparent tape must sticked of pizza box. 4 It must use padding to fix to prevent movement if container is not full with products. 2014.1ϭ www.willas.com.tw Rev. d01 P9 SPR60N04 45A N-Channel ENHANCEMENT MODE POWER MOSFET 60V Ordering Information: Device PN SPR60N04 -T(1)H(2)-WS Packing Tape&Reel: 3 Kpcs/Reel Note: (1) Packing code, Tape & Reel Packing (2) Haloge free p roduct for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.11 www.willas.com.tw Rev. T01 P 10