SMD Type Product specification NTR3161N Power MOSFET 20 V, 3.3 A, Single N−Channel, SOT−23 Features • • • • • Low RDS(on) Low Gate Charge Low Threshold Voltage Halide−Free This is a Pb−Free Device V(BR)DSS Applications 20 V • DC−DC Conversion • Battery Management • Load/Power Switch RDS(on) MAX ID MAX 50 mW @ 4.5 V 3.3 A 63 mW @ 2.5 V 3.0 A 87 mW @ 1.8 V 2.5 A SIMPLIFIED SCHEMATIC − N−CHANNEL MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) D Symbol Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V Parameter Continuous Drain Current (Note 1) t ≤ 30 s t ≤ 10 s Power Dissipation (Note 1) Steady State TA = 25°C TA = 85°C ID TA = 25°C A S 4.0 PD t ≤ 10 s Pulsed Drain Current 2.3 0.82 TA = 25°C G 3.3 W 3 1.25 IDM 6.4 A TJ, Tstg −55 to 150 °C Source Current IS 0.65 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL tp = 10 ms Operating Junction and Storage Temperature 260 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain 1 TRCMG G 2 SOT−23 CASE 318 STYLE 21 1 1 Gate °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 Source TRC = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RqJA 260 °C/W Junction−to−Ambient − t ≤ 30 s RqJA 153 °C/W Junction−to−Ambient − t < 10 s (Note 1) RqJA 100 °C/W 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). http://www.twtysemi.com [email protected] ORDERING INFORMATION Device NTR3161NT1G Package Shipping† SOT−23 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 4008-318-123 1 of 2 SMD Type Product specification NTR3161N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS /TJ ID = 250 mA, Reference to 25°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V, TJ = 25°C VGS = 0 V, VDS = 16 V, TJ = 125°C 1.0 10 mA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = "8 V 100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.0 V Negative Threshold Temperature Coefficient VGS(TH) /TJ Drain−to−Source On−Resistance RDS(on) OFF CHARACTERISTICS V 16.2 mV/°C ON CHARACTERISTICS (Note 2) Forward Transconductance 0.4 0.6 2.4 gFS mV/°C VGS = 4.5 V, ID = 3.3 A 38 50 mW VGS = 2.5 V, ID = 3.0 A 44 63 VGS = 1.8 V, ID = 2.5 A 52 87 VDS = 5.0 V, ID = 3.3 A 10.5 S 540 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 10 V 80 62 nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.6 RG 2.4 W td(on) 6.7 ns Gate Resistance 7.3 VGS = 4.5 V, VDS = 10 V, ID = 3.3 A 0.4 0.8 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 10 V, ID = 3.3 A, RG = 6 W tf 11.6 18.6 23.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 1.0 A, TJ = 25°C 0.65 14.7 VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms QRR 1.0 V ns 5.2 9.5 3.3 nC 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2