Product specification NTR2101P Small Signal MOSFET V(BR)DSS RDS(on) Typ −8.0 V, −3.7 A, Single P−Channel, SOT−23 39 mW @ −4.5 V −8.0 V −3.7 A 52 mW @ −2.5 V Features • • • • ID Max 79 mW @ −1.8 V Leading Trench Technology for Low RDS(on) −1.8 V Rated for Low Voltage Gate Drive SOT−23 Surface Mount for Small Footprint (3 x 3 mm) This is a Pb−Free Device P−Channel D Applications • High Side Load Switch • DC−DC Conversion • Cell Phone, Notebook, PDAs, etc. G S MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) t≤5s TA = 25°C Symbol Value Unit VDSS −8.0 V VGS ±8.0 V ID −3.7 A TA = 70°C Power Dissipation (Note 1) −3.0 t≤5s PD 0.96 W tp = 10 ms IDM −11 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −1.2 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 1 2 SOT−23 CASE 318 STYLE 21 TR7 MG G 1 Gate 2 Source TR7 = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION THERMAL RESISTANCE RATINGS Parameter 3 Symbol Max Unit Device Package Shipping† Junction−to−Ambient – Steady State RqJA 160 °C/W NTR2101PT1G RqJA 130 SOT−23 (Pb−Free) 3000/Tape & Reel Junction−to−Ambient − t ≤ 5 s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). http://www.twtysemi.com [email protected] †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 4008-318-123 1 of 2 Product specification NTR2101P ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −8.0 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 10 VGS = 0 V, VDS = −6.4 V mV/°C TJ = 25°C −1.0 TJ = 125°C −100 IGSS VDS = 0 V, VGS = ±8.0 V VGS(TH) VGS = VDS, ID = −250 mA mA ±100 nA −1.0 V TY CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS −0.40 2.7 mV/°C VGS = −4.5 V, ID = −3.5 A 39 52 VGS = −2.5 V, ID = −3.0 A 52 72 VGS = −1.8 V, ID = −2.0 A 79 120 VGS = −5.0 V, ID = −3.5 A 9.0 S 1173 pF mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −4.0 V QG(TOT) 289 218 15 nC 7.4 15 ns 15.75 25 12 VGS = −4.5 V, VDS = −4.0 V, ID = −3.5 A 3.8 td(on) tr VGS = −4.5 V, VDD = −4.0 V, ID = −1.2 A, RG = 6.0 W 38 58 31 51 −0.73 −1.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 2.5 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time td(off) Fall Time tf DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −1.2 A TJ = 25°C V 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2