Schottky Barrier Diodes RB160VA-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 3) High reliability. 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 0.8 0.5 2.0 1.3±0.05 TUMD2 Structure 0.8±0.05 Construction Silicon epitaxial planar 0.6±0.2 0.1 ROHM : TUMD2 dot (year week factory) + day Taping specifications (Unit : mm) 1.43±0.05 4.0±0.1 φ1.0±0.2 0 8.0±0.2 2.8±0.05 2.8±0.05 0.25±0.05 1.75±0.1 φ1.55±0.1 0.05 2.0±0.05 3.5±0.05 4.0±0.1 0.9±0.08 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Forward current surge peak(t=100μs・1cyc) Junction temperature Storage temperature Limits 40 40 1 5 10 150 -40 to +150 Symbol VRM VR Io IFSM IFSM Tj Tstg Unit V V A A A ℃ ℃ Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF Min. Typ. Max. Unit - 0.50 0.55 V IR - 1.5 50 μA www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 Conditions IF=700mA VR=40V 2010.06 - Rev.D RB160VA-40 Data Sheet Electrical characteristic curves (Ta=25C) 100000 1 Ta=150℃ f=1MH Ta=75℃ Ta=25℃ 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 0.1 1000 Ta=125℃ 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150℃ 1000 Ta=75℃ 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 100 10 0.01 0.001 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 600 0 510 500 AVE:501.9mV 490 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 190 20 15 10 AVE:1.5772uA 5 0 180 170 160 150 140 130 120 110 100 Ct DISPERSION MAP IR DISPERSION MAP 20 30 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 20 15 15 10 10 5 5 0 0 25 20 15 10 5 0 1 10 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 1 1000 30 200 Ta=25℃ VR=40V n=30pcs VF DISPERSION MAP 0.3 0.9 D=1/2 100 0.7 REVERSE POWER DISSIPATION:PR (W) 0.8 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0 40 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 REVERSE CURRENT:IR(uA) Ta=25℃ IF=0.7A n=30pcs 480 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 20 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 30 530 FORWARD VOLTAGE:VF(mV) 1 0.001 0 Sin(θ=180) 0.6 DC 0.5 0.4 0.3 0.2 Sin (θ=180) D=1/2 0.1 DC 0.2 0.1 10 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1000 0 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2/3 2 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2010.06 - Rev.D RB160VA-40 2 2 0A 0V D=1/2 DC 1.5 Io t T VR D=t/T VR=20V Tj=150℃ 1 0.5 Sin(θ=180) DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Data Sheet Sin(θ=180) 1.5 D=1/2 1 Io 0A 0V 0.5 t 0 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 150 0 25 VR D=t/T VR=20V T Tj=125℃ 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) 3/3 2010.06 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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