100mA / 50V Digital transistors (with built-in resistors) DTC115TM / DTC115TE / DTC115TUA / DTC115TKA Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTC115TM 0.2 1.2 0.32 Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3)Only the on / off conditions need to be set for operation, making the device design easy. 4) Higher mounting densities can be achieved. 0.8 1.2 (3) 0.2 (1)(2) 0.22 0.4 0.4 0.13 0.5 (1) Base (2) Emitter (3) Collector 0.8 ROHM : VMT3 Abbreviated symbol : 09 DTC115TE 0.7 1.6 0.55 0.3 (2) (1) 0.2 0.2 0.1Min. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) 1.6 0.8 (3) 0.15 0.5 0.5 1.0 ROHM : EMT3 (1) Emitter (2) Base (3) Collector Abbreviated symbol : 09 Packaging specifications DTC115TUA UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering Part No. unit (pieces) 8000 3000 3000 3000 − − − DTC115TM DTC115TE − DTC115TUA − − DTC115TKA − − − 0.7 (3) (1) (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 − − − 0.15 1.3 Abbreviated symbol : 09 DTC115TKA 0.1Min. EMT3 2.1 VMT3 0.9 0.2 0.3 1.25 Package 2.0 (1) Emitter (2) Base (3) Collector 1.1 2.9 0.4 0.8 (3) 1.6 2.8 Inner circuit (2) (1) 0.95 0.95 R1 0.15 E ROHM : SMT3 EIAJ : SC-59 E : Emitter C : Collector B : Base 1.9 Abbreviated symbol : 09 0.3Min. C B (1) Emitter (2) Base (3) Collector R1=100kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTC115TM / DTC115TE / DTC115TUA / DTC115TKA Data Sheet Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol Limits Unit VCBO VCEO 50 50 V V VEBO IC 5 100 V mA DTC115TM / DTC115TE DTC115TUA / DTC115TKA Junction temperature Collector power dissipation Tj 150 200 150 Tstg −55 to +150 Pc Storage temperature mW ˚C ˚C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit BVCBO BVCEO 50 50 5 − − − − − − − − V V IC=50μA IC=1mA V μA IE=50μA − − μA V VEB=4V VCE(sat) − − 0.5 0.5 0.3 hFE 100 250 600 − IC=1mA, VCE=5V Input resistance R1 Transition frequency fT ∗ 70 − 100 250 130 − kΩ MHz Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio ∗ Characteristics of built-in transistor. BVEBO ICBO IEBO www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/2 Conditions VCB=50V IC/IB=1mA/0.1mA − VCE=10V, IE=−5mA, f=100MHz 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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