100mA / 50V Digital transistors (with built-in resistor) DTC144TM / DTC144TE / DTC144TUA / DTC144TKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3)Only the on/off conditions need to be set for operation, making the device design easy. Structure NPN epitaxial planar silicon transistor (Resistor built-in type) Dimensions (Unit : mm) 0.7 1.6 DTC144TE 0.55 0.3 (3) (2) 0.4 0.4 0.2 (1)(2) 0.22 0.5 (1) Base (2) Emitter (3) Collector 0.8 ROHM : VMT3 DTC144TUA Abbreviated symbol : 06 2.0 0.2 0.15 0.5 0.5 ROHM : EMT3 1.0 (1) Emitter (2) Base (3) Colector Abbreviated symbol : 06 DTC144TKA 0.9 0.2 0.3 (1) 0.2 0.13 0.1Min. 0.8 1.2 0.8 (3) 1.6 1.2 0.32 0.2 DTC144TM 2.9 0.7 1.1 0.4 0.8 1.6 2.8 (1) 0.65 0.65 0.15 1.3 (2) (1) Emitter (2) Base (3) Colector ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions Abbreviated symbol : 06 (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 0.3Min. 0.1Min. (2) (3) 2.1 1.25 (3) (1) Emitter (2) Base (3) Colector Each lead has same dimensions Abbreviated symbol : 06 Inner circuit C B R1 E B : Base C : Collector E : Emitter R1=47kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.B DTC144TM / DTC144TE / DTC144TUA / DTC144TKA Data Sheet Packaging specifications Part No. Package VMT3 EMT3 UMT3 SMT3 Packaging type Taping Taping Taping Taping Code T2L TL T106 T146 Basic ordering unit (pieces) 8000 3000 3000 3000 − − − − − DTC144TM DTC144TE − DTC144TUA − − DTC144TKA − − − − Absolute maximum ratings (Ta=25C) Parameter Limits Symbol DTC144TM DTC144TE DTC144TUA DTC144TKA Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 50 Emitter-base voltage VEBO 5 Collector current IC Collector power dissipation Pc Unit V V 100 mA 150 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit BVCBO 50 − − V IC=50μA Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA BVEBO 5 − − V IE=50μA ICBO − − 0.5 μA VCB=50V IEBO − − 0.5 μA VEB=4V VCE(sat) − − 0.3 V IC/IB=5mA/0.5mA VCE=5V, IC=1mA Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Conditions DC current transfer ratio hFE 100 250 600 − Input resistance R1 32.9 47 61.1 kΩ − − 250 − MHz VCE=10V, IE= −5mA, f=100MHz fT ∗ Transition frequency ∗ Characteristics of built-in transistor 1k VCE=5V DC CURRENT GAIN : hFE 500 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 1 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Electrical characteristic curves 1 lC/lB=10 500m 200m 100m 50m Ta=100°C 25°C −40°C 20m 10m 5m 2m 1m 100μ 200μ 500μ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-emitter saturation voltage vs. collector current 2/2 2009.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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