ROHM 2SA1776

2SA1812 / 2SA1727 / 2SA1776
Transistors
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
Features
1) High breakdown voltage, BVCEO= 400V.
2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA.
3) High switching speed, typically tf : 1 s at IC = 100mA.
4) Wide SOA (safe operating area).
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Parameter
VCBO
VCEO
400
400
V
V
Emitter-base voltage
VEBO
7
0.5
V
A (DC)
1.0
A (Pulse)
1
0.5
W
W
2
W
W (Tc 25°C)
W
3
Collector current
IC
2SA1812
Collector power
2SA1727
dissipation
2
1
PC
10
2SA1776
Junction temperature
Storage temperature
1
Tj
°C
°C
150
Tstg
55 to +150
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater.
Packaging specifications and hFE
Type
2SA1812
2SA1727
2SA1776
Package
hFE
MPT3
PQ
CPT3
PQ
ATV
PQ
Marking
AJ
T100
3000
TL
3000
TV2
2500
Code
Basic ordering unit (pieces)
Denotes hFE
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
400
400
Emitter-base breakdown voltage
BVEBO
7
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
DC current tranfer ratio
Collector-emitter saturation voltage
hFE
VCE(sat)
Base-emitter saturation voltage
Transition frequency
VBE(sat)
Output capacitance
Turn-on time
Storage time
Fall time
Typ.
Max.
10
10
82
150
270
1
1.2
Unit
Conditions
V
V
IC
IC
50 A
1mA
V
IE
50 A
A
VCB
400V
A
VEB
6V
V
VCE
IC/IB
5V , IC
50mA
100mA / 10mA
V
IC/IB
100mA / 10mA
fT
12
MHz
VCB
5V , IE
50mA , f
Cob
ton
18
0.6
pF
s
VCE
10V , IE
0A , f
tstg
2.7
s
tf
1
s
5MHz
1MHz
IC
100mA, RL 1.5k
IB1
IB2
10mA
VCC to 150V
Rev.A
1/3
2SA1812 / 2SA1727 / 2SA1776
Transistors
Electrical characteristic curves
-1
-0.3
lB=
A
-20m
-0.2
0
Ta=25°C
0
-2
-4
-6
-8
-10
-0.02
-0.01
-0.002
-0.001
-0.0005
VCE=-10V
100
-5V
50
20
10
5
2
1
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
0 -0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6 -1.8 -2.0
-0.2-0.5 -1
Fig.1 Grouded emitter output
characteristics
Fig.2 Grounded emitter propagation
characteristics
Fig.3 DC current gain vs.
collector current ( )
200
100
Ta=100°C
25°C
-25°C
50
20
10
5
2
1
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
-0.2-0.5 -1
COLLECTOR CURRENT : IC (A)
1000
Ta=25°C
VCE=-5V
500
200
100
50
20
10
5
2
1
0.0005
0.002 0.01
0.001
0.005
0.02 0.050.1
0.2 0.5
COLLECTOR CURRENT : IE (A)
Fig.7 TRANSITION FREQUENCY
vs. EMITTER CURRENT
Ta=25°C
-5
-2
-1
-0.5
-0.2
-0.1
50
lC/lB=
20
10
-0.05
-0.02
-0.01
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
-0.2-0.5 -1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current
COLLECTOR OUTPUT CAPACITANCE : COb (pF)
Fig.4 DC current gain vs.
collector current ( )
-10
1000
Ta=25°C
f=1MHZ
lE=0A
500
200
100
50
20
10
-10
lC/lB=10
-5
-2
-1
Ta=-25°C
-0.5
VBE(sat)
25°C 100°C
-0.2
-0.1
-0.05
Ta=100°C
VCE(sat)
-25°C
25°C
-0.02
-0.01
-0.001
-0.005
-0.02 -0.1
-0.002 -0.01
-0.05
-0.2-0.5 -1
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation
voltage vs. collector current
-10
COLLECTOR CURRENT : lC (A)
VCE=-5V
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
COLLECTOR TO EMITTER VOLTAGE : VBE (V)
500
DC CURRENT GAIN : hFE
-0.05
200
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1000
TRANSITION FREQUENCY : fT (MHZ)
-0.2
-0.1
-0.005
-0.1
DC CURRENT GAIN : hFE
A
-40m
-25°C
mA
-60
Ta=25°C
500
0°C
-0.4
1000
VCE=-5V
-0.5
25°C
-80
COLLECTOR CURRENT : lC (A)
1 1
-1 - -
Ta=10
A A
A
m 0m mA 00m
60 4 20 -1
mA
A
m
80
-1 0mA
-2
0
COLLECTOR CURRENT : lC (A)
-0.5
-5
-2
-1
lC Max. (Pulse )
PW=10ms
100ms
-0.5
-0.2
-0.1
-0.05
Ta=25°C
-0.02 (When mounted on a
-0.01 40 40 0.7mm
ceramic board.)
-0.005
Single
5
2
1
-0.05-0.1 -0.2 -0.5 -1
-2 -5-10
-20 -50
-0.002
-0.001
-1
nonrepetitive
pulse
-2 -5-10
-20 -50-100 -200-500
COLLECTOR TO BASE VOLTAGE: VCB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
Fig.9 Safe operating area (2SA1812)
Rev.A
2/3
2SA1812 / 2SA1727 / 2SA1776
-10
COLLECTOR CURRENT : lC (A)
(1) When mounted on a
40 40 0.7mm ceramic board
(2) Unmounted
10000
1000
(2)
100
(1)
10
100000
-5
-2
-1
lC Max. (Pulse )
PW=10ms
DC
-0.5
100ms
-0.2
-0.1
-0.05
-0.02
-0.01
-0.005 Tc=25°C
Single
1
0.1
0.001 0.01
0.1
1
10
100
nonrepetitive
pulse
-0.002
-0.001
-1 -2
1000
-5 -10 -20 -50-100-200 -500-1000
(1) Using Infinite heat sink
(2) Unmounted
10000
1000
(2)
100
(1)
10
1
0.1
0.001 0.01
0.1
1
10
100
1000
PULSE WIDTH : PW (s)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TIME : t (s)
Fig.10 TRANSIENT THERMAL
RESISTANCE (2SA1812)
Fig.11 Safe operating area (2SA1727)
Fig.12 TRANSIENT THERMAL
RESISTANCE (2SA1727)
100000
-10
COLLECTOR CURRENT : lC (A)
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
100000
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
TRANSIENT THERMAL RESISTANCE : Rth (°C / W)
Transistors
-5
-2
-1
-0.5
lC Max. (Pulse )
DC
PW=10ms
100ms
-0.2
-0.1
-0.05
-0.02
-0.01
-0.005 Ta=25°C
Single
nonrepetitive
-0.002 pulse
-0.001
-1 -2 -5 -10 -20 -50-100-200 -500-1000
Using printed circuit board
1.7mm thick, collector plating
1cm2 or larger.
10000
1000
100
10
1
0.1
0.001 0.01
0.1
1
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
PULSE WIDTH : PW (s)
Fig.13 Safe operating area (2SA1776)
Fig.14 TRANSIENT THERMAL
RESISTANCE (2SA1776)
Switching characteristic measurement circuit
RL=1.5k
lC
IB
T.U.T
IC
lB2
lB1
lB1
VIN
lB2
RG
VCC_
~-150V
10%
lc
PW
PW_
~50 s
<1
duty cycle=
90%
+VBB
ton
tstg
tf
Fig.15 Switching characteristic measurement circuit
Rev.A
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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ROHM CO., LTD. is granted to any such buyer.
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The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1