2SB1197 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -800 mA Total Device Dissipation TA=25°C PD 200 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 1/3 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 19-Apr-2011 2SB1197 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50µA, I E = 0A V(BR)CBO -40 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -32 - - V Emitter-Base Breakdown Voltage IE= -50µA, I C=0 V(BR)EBO -5.0 - - V ICBO - - -0.5 µA IEBO - - -0.5 µA VCE(sat) - - -0.5 hFE 120 - 390 fT 200 - - Cob - 12 30 VCB = -20V, IE = 0A VEB = -4V, IC = 0A ON CHARACTERISTICS Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA DC Current Transfer Ration VCE = -3V, IC = -100mA V SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-5V, IC = -20mA, f=100MHz Collector output capacitane VCB=-10V, I E = 0mA, f=1MHz MHz pF CLASSIFICATION hFE Item Q R Range 120-270 180-390 Marking AHQ AHR WEITRON http://www.weitron.com.tw 2/3 19-Apr-2011 2SB1197 Electrical characteristic curves WEITRON http://www.weitron.com.tw 3/3 19-Apr-2011