2SA812 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5.0 V Collector Current - Continuous IC -100 mA Total Device Dissipation TA=25°C PD 200 mW Junction Temperature Tj +150 °C Storage Temperature Tstg -55 to +150 °C WEITRON http://www.weitron.com.tw 1/3 08-Dec-06 2SA812 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -100µA, IE = 0A V(BR)CBO -60 - - V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0A V(BR)CEO -50 - - V Emitter-Base Breakdown Voltage IE= 100µA, IC=0 V(BR)EBO -5.0 - - V Collector Cutoff Current VCB = -60V, IE = 0A ICBO - - -0.1 µA Emitter Cutoff Current VEB = -5V, IC = 0A IEBO - - -0.1 µA Collector-Emitter Saturation Voltage IC = -100mA, IB = -10mA VCE(sat) - - -0.3 V Collector-Emitter Voltage IC = -1mA, VCE = -6V, VBE(on) - - -0.68 V DC Current Transfer Ration VCE = -6V, IC = -1mA hFE 90 - 600 fT 180 ON CHARACTERISTICS SMALL-SIGNAL CHARACTERISTICS Transition frequence VCE=-6V, IC = -10mA - MHz - CLASSIFICATION hFE Range 90-180 135-270 200-400 300-600 Marking M4 M5 M6 M7 WEITRON http://www.weitron.com.tw 2/3 08-Dec-06 2SA812 SOT-23 Outline Dimension SOT-23 A B TOP VIEW Dim A B C D E G H J K L M C D E G H K J WEITRON http://www.weitron.com.tw L M 3/3 Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 08-Dec-06