2SD1781K - Weitron

2SD1781K
NPN General Purpose Transistors
3
P b Lead(Pb)-Free
1
2
SOT-23
Features:
*Very Low VCE(sat)
V CE(sat) < 0.4 V (Typ.)
(I C / IB = 500mA / 50mA)
*High Current Capacity in Compact Package.
*Complements The 2SB1197
*We Declare That The Material of Product Compliance With RoHS Requirements.
MAXIMUM RATINGS(Ta=25°C)
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
32
V
Collector-Base Voltage
VCBO
40
V
Emitter-Base Voltage
VEBO
5.0
V
0.8
A(DC)
Rating
Collector Current
IC
1.5
A(Pulse)*1
Total Device Dissipation
TA=25°C
PD
200
mW
Junction Temperature
Tj
+150
°C
Storage Temperature
Tstg
-55 to +150
°C
note: 1.Single pulse Pw = 100ms
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2SD1781K
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
IC = 1mA
V(BR)CEO
32
-
-
V
Collector-Base Breakdown Voltage
IC = 50µA
V(BR)CBO
40
-
-
V
Emitter-Base Breakdown Voltage
IE= 50µA
V(BR)EBO
5.0
-
-
V
Collector Cutoff Current
VCB = 20V
ICBO
-
-
0.5
µA
Emitter Cutoff Current
VEB = 4V
IEBO
-
-
0.5
µA
VCE(sat)
-
-
0.4
V
hFE
120
-
390
fT
-
150
-
MHz
C ob
-
10
-
pF
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
IC = 500mA, I B = 50mA
DC Current Transfer Ration
VCE = 3V, I C = 100mA
SMALL-SIGNAL CHARACTERISTICS
Transition Frequence
VCE = 5V, I E =-50mA, f = 100MHz
Collector Output Capacitance
VCB =10V, IE = 0, f = 1MHz
Classification of hFE
Rank
Q
R
Range
120-270
180-390
Marking
AFQ
AFR
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2SD1781K
Electrical characteristic curves
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2SD1781K
SOT-23 Outline Dimension
SOT-23
A
B
TOP VIEW
Dim
A
B
C
D
E
G
H
J
K
L
M
C
D
E
G
H
K
J
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L
M
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Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
14-Nov-2012