IRF3205 ® Pb IRF3205 Pb Free Plating Product N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features G ● VDS=55V; ID=105A@ VGS=10V; D S RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Schematic Diagram TO-220CB Top View Application VDS = 55 V ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application ID = 105 A RDS(ON) = 5.0 mΩ Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V) 55 V VGS Gate-Source Voltage (VDS=0V) ±25 V ID (DC) Drain Current (DC) at Tc=25℃ 105 A ID (DC) Drain Current (DC) at Tc=100℃ 100 A 420 A Peak Diode Recovery Voltage 30 V/ns Maximum Power Dissipation(Tc=25℃) 139 W 0.926 W/℃ 625 mJ -55 To 175 ℃ IDM (pluse) dv/dt PD Drain Current-Continuous@ Current-Pulsed (Note 1) Derating Factor EAS TJ,TSTG Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:TJ=25℃,VDD=40V,VG=10V,RG=25Ω B B Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 1/5 http://www.thinkisemi.com/ IRF3205 ® Table 2. Thermal Characteristic Symbol Parameter RJC Thermal Resistance,Junction-to-Case Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Value Unit 1.08 ℃/W Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=250μA 55 V IDSS Zero Gate Voltage Drain Current(Tc=25℃) VDS=55V,VGS=0V 1 μA IDSS Zero Gate Voltage Drain Current(Tc=125℃) VDS=55V,VGS=0V 1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 4 V RDS(ON) Drain-Source On-State Resistance 6.0 mΩ 2 VGS=10V, ID=40A 5.0 Dynamic Characteristics gFS Forward Transconductance Ciss Input Capacitance VDS=25V,ID=40A VDS=25V,VGS=0V, f=1.0MHz 25 S 5905 PF 905 PF Coss Output Capacitance Crss Reverse Transfer Capacitance 548 PF Qg Total Gate Charge 94 nC Qgs Gate-Source Charge 18 nC Qgd Gate-Drain Charge 25 nC 15 nS 18 nS 31 nS 38 nS VDS=30V,ID=30A, VGS=10V Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) tf VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω Turn-Off Delay Time Turn-Off Fall Time Source-Drain Diode Characteristics ISD Source-drain Current(Body Diode) 105 A ISDM Pulsed Source-Drain Current(Body Diode) 420 A VSD (Note 1) Forward On Voltage TJ=25℃,ISD=40A,VGS=0V (Note 1) trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-on Time (Note 1) TJ=25℃,IF=75A di/dt=100A/μs 0.87 0.95 V 56 nS 113 nC Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD) Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25℃ Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 2/5 http://www.thinkisemi.com/ IRF3205 ® Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit： Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 3/5 http://www.thinkisemi.com/ IRF3205 ® TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure2. Transfer Characteristics ID-Drain Current (A) ID-Drain Current (A) Figure1. Output Characteristics VDS Drain-Source Voltage (V) VGS Gate-Source Voltage (V) ID- Drain Current (A) Figure5. Gate Charge VGS Gate-Source Voltage (V) Figure4. Rdson Vs Junction Normalized On-Resistance RDS(ON) On-Resistance (mΩ) Figure3. Rdson Vs Drain Current TJ-Junction Temperature(℃) Figure6. Source- Drain Diode Forward 10 8 6 4 2 0 VSD Source-Drain Voltage (V) Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 4/5 http://www.thinkisemi.com/ IRF3205 ® Figure7. Capacitance vs Vds Figure8. Safe Operation Area Ciss 6000 ID-Drain Current (A) C Capacitance (pF) 7000 5000 4000 3000 2000 Coss 1000 Crss 0 0 5 10 15 20 25 VDS Drain-Source Voltage (V) VDS Drain-Source Voltage (V) Figure10. VGS(th) vs Junction Temperature Normalized BVDSS Figure9. BVDSS vs Junction Temperature TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) R(t), Normalized Effective Transient Thermal Impedance Figure11. Normalized Maximum Transient Thermal Impedance Rev.05 © 2013 Thinki Semiconductor Co.,Ltd. Page 5/5 http://www.thinkisemi.com/