Product specification WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V -30 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V SOT-23-3L Descriptions D 3 The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. 1 2 Standard Product WPM3005 is Pb-free. G S Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L W35* 2 1 W35 = Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device http://www.twtysemi.com WPM3005-3/TR [email protected] Package Shipping SOT-23-3L 3000/Reel&Tape 4008-318-123 1 of 3 Product specification WPM3005 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 TA=25°C Continuous Drain Current a TA=70°C TA=25°C Maximum Power Dissipation a TA=70°C TA=25°C Continuous Drain Current b TA=70°C TA=25°C Maximum Power Dissipation b TA=70°C ID ID V -4.1 -3.4 -3.3 -2.7 1.4 1.0 0.9 0.6 -3.8 -3.2 -3.0 -2.5 1.2 0.8 0.8 0.5 PD PD Unit A W A W Pulsed Drain Current c IDM -25 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t 10 s Steady State t 10 s Steady State Steady State Typical Maximum 65 85 90 125 85 100 115 140 40 60 RșJA RșJA RșJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. http://www.twtysemi.com [email protected] 4008-318-123 Unit °C/W 2 of 3 Product specification WPM3005 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V ±100 nA VGS(TH) VGS = VDS, ID = -250uA -2.0 -2.5 V VGS = -10V, ID = -4.1A 57 60 VGS = -10V, ID = -3.0A 57 60 VGS = -4.5V, ID = -4.0A 83 90 VGS = -4.5V, ID= -3.0A 83 90 VDS = -5 V, ID = -4.1A 7.6 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -1.5 m S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 670 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -10 V, VDS = -15 V, 1.31 Gate-to-Source Charge QGS ID = -4.1 A 2.0 Gate-to-Drain Charge QGD 2.45 Turn-On Delay Time td(ON) 6.8 Rise Time tr VGS = -10 V, VDS = -15V, 3.2 Turn-Off Delay Time td(OFF) RL=5.0 , RG=15 25.2 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = pF 75 -15 V 62 14.0 nC SWITCHING CHARACTERISTICS ns 4.4 BODY DIODE CHARACTERISTICS Forward Voltage http://www.twtysemi.com VSD VGS = 0 V, IS = -1.0A [email protected] -0.55 -0.78 4008-318-123 -1.50 V 3 of 3